IRF7488TRPBF N-Channel MOSFET 80V 6.3A Equivalent & Substitute Parts

Part Overview

The IRF7488TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 80V drain-to-source voltage with 6.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7488TRPBF is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal specifications, while conforming to identical or superior packaging and compliance standards.

Substiute Parts

IRF7488TRPBF

Infineon TechnologiesIn Stock: 80309IRF7488TRPBF Datasheet

Current PartRFQ

IRF7854TRPBF

Infineon TechnologiesIn Stock: 22797IRF7854TRPBF Datasheet

MFR RecommendedRFQ

FDS3590

onsemiIn Stock: 23324FDS3590 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7488TRPBF are identified based on strict electrical and mechanical compatibility criteria. The substitution logic is governed by the following parameters:

Primary Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 80V
• Continuous Drain Current (Id): Must equal or exceed 6.3A at 25°C ambient
• Power Dissipation: Must equal or exceed 2.5W
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
• Package Type: Must be 8-SOIC surface mount with 0.154" width (3.90mm)
• RoHS Compliance: Must maintain ROHS3 compliance
• Moisture Sensitivity: Must be MSL 1 or equivalent

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Acceptable range ±20% of specified maximum
• On-Resistance (Rds On): Lower values are acceptable; higher values require circuit validation
• Gate Charge (Qg): Lower values improve switching performance; higher values require gate drive capability verification
• Input Capacitance (Ciss): Variation acceptable within device series specifications

Two substitute parts meet these criteria: IRF7854TRPBF (Infineon Technologies, manufacturer-recommended) and FDS3590 (onsemi, direct equivalent).

Parameter Comparison

Engineering Selection Recommendations

IRF7854TRPBF (Infineon Technologies - Manufacturer-Recommended Substitute)

The IRF7854TRPBF is the manufacturer-recommended substitute for the obsolete IRF7488TRPBF. Both devices are part of the Infineon HEXFET® series and share identical voltage and thermal specifications. The IRF7854TRPBF offers superior electrical performance with 10A continuous drain current (versus 6.3A), reduced on-resistance of 13.4 mOhm (versus 29 mOhm), and lower gate charge of 41 nC (versus 57 nC). The device maintains active product status with full manufacturer support and is ROHS3 compliant with MSL 1 rating. The 8-SOIC package footprint is identical, enabling direct PCB substitution without layout modification.

FDS3590 (onsemi - Direct Equivalent)

The FDS3590 is manufactured by onsemi under the PowerTrench® series and provides direct electrical equivalence to the IRF7488TRPBF. The device matches the 80V voltage rating and provides 6.5A continuous drain current, closely aligned with the original 6.3A specification. The FDS3590 features lower gate charge (35 nC versus 57 nC) and reduced input capacitance (1180 pF versus 1680 pF), improving switching performance. On-resistance is 39 mOhm at 6.5A and 10V, representing a trade-off compared to the original specification. The device maintains active product status, ROHS3 compliance, and MSL 1 rating. The 8-SOIC package is identical to the original part, supporting direct substitution.

Selection Basis:

Both substitute parts satisfy all mandatory compatibility criteria: identical 80V Vdss rating, continuous drain current at or above 6.3A, matching 2.5W power dissipation, identical operating temperature range (-55°C to 150°C TJ), and identical 8-SOIC surface mount packaging. Both devices maintain ROHS3 compliance and MSL 1 moisture sensitivity classification. The IRF7854TRPBF is recommended for applications requiring maximum performance margin and manufacturer continuity within the Infineon product line. The FDS3590 is recommended for applications prioritizing lower gate charge and input capacitance characteristics, or for supply chain diversification across manufacturers.

Frequently Asked Questions (FAQ)

Q: Can the IRF7854TRPBF be used as a direct replacement for the IRF7488TRPBF?

A: Yes. The IRF7854TRPBF meets all electrical and mechanical compatibility requirements. Both devices share identical 80V Vdss rating, 2.5W power dissipation, -55°C to 150°C operating temperature range, and 8-SOIC surface mount packaging. The IRF7854TRPBF provides enhanced performance with higher continuous drain current (10A versus 6.3A) and lower on-resistance (13.4 mOhm versus 29 mOhm). No circuit modifications or PCB layout changes are required.

Q: What are the key differences between the IRF7854TRPBF and FDS3590?

A: Both devices maintain identical 80V Vdss rating, 2.5W power dissipation, and 8-SOIC packaging. The IRF7854TRPBF offers higher continuous drain current (10A versus 6.5A) and lower on-resistance (13.4 mOhm versus 39 mOhm). The FDS3590 provides lower gate charge (35 nC versus 41 nC) and lower input capacitance (1180 pF versus 1620 pF). The IRF7854TRPBF is manufactured by Infineon; the FDS3590 is manufactured by onsemi. Both are active products with full manufacturer support.

Q: Are there any package compatibility concerns when substituting these parts?

A: No. All three devices (IRF7488TRPBF, IRF7854TRPBF, and FDS3590) use identical 8-SOIC packaging with 0.154" width (3.90mm). The physical footprint, pin configuration, and PCB land pattern are identical. Direct substitution on existing PCBs is supported without layout modification.

Q: Do the substitute parts maintain RoHS and MSL compliance?

A: Yes. Both IRF7854TRPBF and FDS3590 are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity classification, matching the original IRF7488TRPBF specifications. No changes to supply chain handling, storage, or assembly procedures are required.

Q: Which substitute part should be selected for new designs?

A: For new designs, either substitute part is acceptable based on application requirements. The IRF7854TRPBF is recommended for applications requiring maximum performance margin, higher current capability, and continuity within the Infineon HEXFET® product family. The FDS3590 is recommended for applications prioritizing lower switching losses (lower gate charge and input capacitance) or for supply chain diversification across multiple manufacturers.

Q: What is the impact of different on-resistance values on circuit performance?

A: On-resistance directly affects conduction losses and heat dissipation. The IRF7854TRPBF (13.4 mOhm) provides the lowest conduction losses, reducing thermal stress. The FDS3590 (39 mOhm) is higher but remains within acceptable limits for applications originally designed for the IRF7488TRPBF (29 mOhm). Circuit thermal analysis should confirm that power dissipation remains within design margins when using the FDS3590.

Q: Are gate drive requirements different between these devices?

A: Gate threshold voltages are similar: IRF7488TRPBF and FDS3590 both specify 4V @ 250µA, while IRF7854TRPBF specifies 4.9V @ 100µA. All devices accept ±20V maximum gate voltage. Gate charge differs: IRF7854TRPBF (41 nC) and FDS3590 (35 nC) require lower gate drive energy than the original IRF7488TRPBF (57 nC), improving switching speed. Existing gate drive circuits designed for the IRF7488TRPBF are compatible with both substitutes.