IRF7484TRPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7484TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 14A continuous drain current at 25°C. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and legacy system support.

Substiute Parts

IRF7484TRPBF

Infineon TechnologiesIn Stock: 80146IRF7484TRPBF Datasheet

Current PartRFQ

AO4484

Alpha & Omega Semiconductor Inc.In Stock: 12338AO4484 Datasheet

MFR RecommendedRFQ

FDS4470

Fairchild SemiconductorIn Stock: 25117FDS4470 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7484TRPBF is determined by strict electrical and mechanical compatibility within the following parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must be 40V or greater
• Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
• FET Type: Must be N-Channel MOSFET
• Mounting Type: Must be Surface Mount

Performance Parameters for Functional Equivalence:

• Continuous Drain Current (Id): Substitute must support minimum 14A or provide acceptable derating
• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Operating Temperature Range: Must encompass -55°C to 150°C minimum

Acceptable Substitutes: The AO4484 and FDS4470 meet the critical matching parameters of 40V Vdss and 8-SOIC package. Both are N-Channel MOSFETs in active production status. Electrical performance variations exist within the allowed parameter ranges and must be evaluated against specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

For AO4484 Substitution: The AO4484 is an active product from Alpha & Omega Semiconductor Inc. with ROHS3 compliance. It shares the 40V Vdss rating and 8-SOIC package with the IRF7484TRPBF. The continuous drain current is rated at 10A, which is lower than the original 14A specification. This device is suitable for applications where the required drain current does not exceed 10A at 25°C. The lower gate charge (37 nC) and input capacitance (1950 pF) provide improved switching characteristics. The higher maximum gate voltage rating (±20V) offers greater gate drive flexibility.

For FDS4470 Substitution: The FDS4470 is an active product from Fairchild Semiconductor, part of the PowerTrench® series. It maintains the 40V Vdss and 8-SOIC package compatibility. The continuous drain current is rated at 12.5A, which approaches the original 14A specification more closely than the AO4484. The operating temperature range extends to 175°C, exceeding the original -55°C to 150°C range. The lower Rds On value (9 mOhm) and moderate gate charge (63 nC) provide efficient switching performance. The higher maximum gate voltage rating (+30V, -20V) accommodates various gate drive circuits.

Selection Criteria:

• Choose AO4484 for applications requiring lower power dissipation and faster switching response
• Choose FDS4470 for applications requiring higher continuous drain current capability and extended temperature operation
• Both substitutes maintain electrical compatibility within the 40V Vdss class and 8-SOIC package form factor
• Verify application-specific requirements for drain current, power dissipation, and thermal management before final selection

Frequently Asked Questions (FAQ)

Q: Can the AO4484 directly replace the IRF7484TRPBF in all applications?

A: The AO4484 is mechanically compatible (8-SOIC package) and electrically compatible (40V Vdss, N-Channel MOSFET). However, the continuous drain current rating is 10A versus 14A for the original part. Direct replacement is valid only for applications where the required drain current does not exceed 10A at 25°C. Thermal analysis and current derating must be performed for applications approaching the 10A limit.

Q: What are the key differences between the AO4484 and FDS4470 substitutes?

A: Both parts share 40V Vdss and 8-SOIC packaging. The FDS4470 offers higher continuous drain current (12.5A vs. 10A), lower Rds On (9 mOhm vs. 10 mOhm), and extended operating temperature to 175°C. The AO4484 provides lower gate charge (37 nC vs. 63 nC) and lower input capacitance (1950 pF vs. 2659 pF), resulting in faster switching. Selection depends on whether the application prioritizes current capacity or switching speed.

Q: Is the 8-SOIC package identical across all three parts?

A: Yes. All three parts—IRF7484TRPBF, AO4484, and FDS4470—use the 8-SOIC package with 0.154" width and 3.90mm body width. PCB footprints and land patterns are mechanically compatible. No layout modifications are required for package substitution.

Q: What is the impact of different Rds On specifications on circuit performance?

A: Rds On determines conduction losses and heat dissipation. The IRF7484TRPBF specifies 10 mOhm @ 14A, 7V. The AO4484 specifies 10 mOhm @ 10A, 10V, and the FDS4470 specifies 9 mOhm @ 12.5A, 10V. Lower Rds On values reduce power dissipation. Comparison must account for the different measurement conditions (current and gate voltage). For equivalent current levels, the FDS4470 provides the lowest conduction losses.

Q: Are there compliance or certification differences between the substitutes?

A: The AO4484 is ROHS3 compliant. The IRF7484TRPBF and FDS4470 compliance status is not specified in the provided data. All three parts are REACH Unaffected or have unspecified REACH status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for the IRF7484TRPBF and AO4484. Verify specific compliance requirements for your application and supply chain.

Q: Can the IRF7484TRPBF be used in new designs, or must substitutes be selected?

A: The IRF7484TRPBF is classified as obsolete. For new designs, active products such as the AO4484 or FDS4470 are recommended to ensure long-term component availability and supply chain continuity. Obsolete parts may have limited inventory and extended lead times.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IRF7484TRPBF requires 100 nC @ 7V, the AO4484 requires 37 nC @ 10V, and the FDS4470 requires 63 nC @ 10V. Lower gate charge reduces switching losses and allows faster switching frequencies. Gate drive circuits must supply sufficient current to meet the specified gate charge within the required switching time.

Q: What is the significance of maximum gate voltage (Vgs Max) ratings?

A: The IRF7484TRPBF specifies ±8V maximum gate voltage. The AO4484 specifies ±20V, and the FDS4470 specifies +30V, -20V. Higher Vgs Max ratings provide greater tolerance for gate drive circuit variations and transient overvoltages. Existing gate drive circuits designed for ±8V operation are compatible with all three parts, as the substitutes accept lower gate voltages.