IRF7478PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7478PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 7A continuous drain current in a surface mount 8-SO package. This device is part of the HEXFET® series and is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Substiute Parts

IRF7478PBF

Infineon TechnologiesIn Stock: 4593IRF7478PBF Datasheet

Current PartRFQ

DMT6016LSS-13

Diodes IncorporatedIn Stock: 80373DMT6016LSS-13 Datasheet

MFR RecommendedRFQ

FDS3572

onsemiIn Stock: 7268FDS3572 Datasheet

MFR RecommendedRFQ

STS7NF60L

STMicroelectronicsIn Stock: 38806STS7NF60L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7478PBF is determined by the following critical parameters:

Primary Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must meet or exceed 7A at 25°C
• Package Type: Must be 8-SO or 8-SOIC surface mount configuration
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Factors:

• On-state resistance (Rds On): Lower values indicate improved performance
• Gate charge (Qg): Lower values reduce switching losses
• Input capacitance (Ciss): Affects gate drive requirements
• Regulatory compliance: RoHS3 and REACH status alignment

The three substitute parts listed below satisfy the primary compatibility criteria and maintain functional equivalence within the specified electrical and mechanical parameters.

Parameter Comparison

Engineering Selection Recommendations

DMT6016LSS-13 (Diodes Incorporated)

This substitute provides superior electrical performance with 9.2A continuous drain current and reduced on-state resistance of 18mOhm at 10V Vgs. The lower gate charge of 17nC reduces switching losses compared to the IRF7478PBF. Product status is active with full availability. All regulatory certifications align with the original part. This option is suitable for applications where improved efficiency and thermal performance are beneficial.

STS7NF60L (STMicroelectronics)

This substitute maintains the 60V voltage rating with 7.5A continuous drain current, closely matching the IRF7478PBF current specification. On-state resistance of 19.5mOhm at 10V Vgs provides comparable performance. The STripFET™ II series technology ensures active product status and full supply chain availability. All compliance certifications are equivalent to the original part. This option provides the closest electrical match to the discontinued IRF7478PBF.

FDS3572 (onsemi)

This substitute offers an elevated 80V drain-to-source voltage rating with 8.9A continuous drain current, providing additional voltage margin for circuit protection. The 16mOhm on-state resistance at 10V Vgs delivers improved efficiency. The PowerTrench® series technology ensures active product status. All regulatory requirements are met. This option is appropriate for applications requiring enhanced voltage headroom or where circuit topology permits higher voltage ratings.

Frequently Asked Questions (FAQ)

Q: Can the IRF7478PBF be directly replaced with any of these substitutes without circuit modification?

A: All three substitute parts are pin-compatible in the 8-SOIC package and operate within the same voltage and current ranges as the IRF7478PBF. Direct PCB replacement is feasible. However, verify gate drive voltage compatibility and thermal management requirements for your specific application, as on-state resistance and power dissipation characteristics differ.

Q: What is the primary reason for substitution?

A: The IRF7478PBF is discontinued at DiGi Electronics. The listed substitutes are active products with confirmed supply chain availability and equivalent electrical specifications.

Q: How do the on-state resistance values affect circuit performance?

A: Lower on-state resistance (Rds On) reduces conduction losses and heat generation. DMT6016LSS-13 (18mOhm) and FDS3572 (16mOhm) produce less heat than the original IRF7478PBF (26mOhm). This may reduce thermal management requirements or allow higher current operation within the same thermal budget.

Q: Are there differences in gate drive requirements between these parts?

A: Gate threshold voltage (Vgs(th)) varies: IRF7478PBF is 3V, DMT6016LSS-13 is 2.5V, STS7NF60L is 1V, and FDS3572 is 4V. Verify that your gate driver can reliably switch the selected substitute at the specified Vgs levels. Lower threshold voltages may enable faster switching with lower gate drive power.

Q: Does the higher voltage rating of FDS3572 (80V vs 60V) create any compatibility issues?

A: No. A higher Vdss rating provides additional safety margin and does not create compatibility issues in circuits designed for 60V operation. The FDS3572 will operate correctly in any application rated for 60V or lower.

Q: Are all substitutes RoHS3 and REACH compliant?

A: Yes. All three substitute parts carry RoHS3 compliance and REACH unaffected status, matching the regulatory profile of the IRF7478PBF.

Q: What is the moisture sensitivity level for these parts?

A: All parts, including the original IRF7478PBF and all three substitutes, carry MSL rating 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.