IRF7477TRPBF N-Channel 30V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7477TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 14A continuous drain current at 25°C. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-Resistance (Rds On Max) @ Id, Vgs	8.5 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	2.5	V @ 250µA
Gate Charge (Qg) @ Vgs	38	nC @ 4.5V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC
Mounting Type	Surface Mount
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRF7477TRPBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed 14A
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage specification
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Power Dissipation: Must support minimum 2.5W (Ta)

The substitute parts listed below meet all primary criteria and maintain compatibility with the original IRF7477TRPBF electrical specifications and package footprint.

Parameter Comparison

Parameter	IRF7477TRPBF (Main)	FDS6680A	FDS8880	RSS140N03TB	SI4430BDY-T1-E3	SI4430BDY-T1-GE3	SI4894BDY-T1-E3
Manufacturer	Infineon	onsemi	onsemi	Rohm Semiconductor	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	14	12.5	11.6	14	14	14	8.9
Rds On Max @ Id, Vgs (mOhm)	8.5 @ 14A, 10V	9.5 @ 12.5A, 10V	10 @ 11.6A, 10V	6.7 @ 14A, 10V	4.5 @ 20A, 10V	4.5 @ 20A, 10V	11 @ 12A, 10V
Vgs(th) @ Id (V)	2.5 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 1mA	3 @ 250µA	3 @ 250µA	3 @ 250µA
Qg @ Vgs (nC)	38 @ 4.5V	23 @ 5V	30 @ 10V	37 @ 5V	36 @ 4.5V	36 @ 4.5V	38 @ 10V
Power Dissipation Max (W)	2.5	2.5	2.5	2	1.6	1.6	1.4
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 from Vishay Siliconix are the closest electrical equivalents to the IRF7477TRPBF. Both devices match the 30V/14A rating, maintain identical gate charge characteristics, and are classified as Active products with ROHS3 compliance. The lower on-resistance (4.5 mOhm vs. 8.5 mOhm) provides improved thermal performance. Both variants are available in 8-SOIC packaging with identical electrical specifications; the difference between E3 and GE3 variants relates to packaging and traceability options.

Secondary Substitutes (Acceptable with Design Verification):

RSS140N03TB from Rohm Semiconductor matches the 30V/14A rating and offers superior on-resistance (6.7 mOhm), resulting in lower power dissipation. This device is Active and ROHS3 compliant. The primary consideration is that power dissipation is rated at 2W versus the original 2.5W; thermal design review is necessary for applications operating at maximum current and elevated ambient temperatures.

FDS6680A and FDS8880 from onsemi are Active, ROHS3-compliant alternatives with 30V ratings. FDS6680A supports 12.5A continuous current with 9.5 mOhm on-resistance, while FDS8880 supports 11.6A with 10 mOhm on-resistance. Both maintain 2.5W power dissipation and are suitable for applications where the required drain current does not exceed their rated values. Gate charge is lower in both devices, indicating faster switching characteristics.

Limited Substitution:

SI4894BDY-T1-E3 from Vishay Siliconix is rated for only 8.9A continuous drain current, which is below the IRF7477TRPBF specification of 14A. This device is suitable only for applications where the actual operating current requirement is 8.9A or less. The device is Active and ROHS3 compliant with superior on-resistance (11 mOhm @ 12A, 10V) and lower power dissipation (1.4W).

All substitute parts are classified as Active products with current manufacturing status and ROHS3 compliance, ensuring long-term availability and regulatory compliance for new designs.

Frequently Asked Questions (FAQ)

Q: Can SI4430BDY-T1-E3 or SI4430BDY-T1-GE3 be used as direct drop-in replacements for IRF7477TRPBF?

A: Yes. Both SI4430 variants are direct electrical and mechanical equivalents. They share identical 30V/14A ratings, matching gate charge (36 nC vs. 38 nC), and are packaged in 8-SOIC with identical footprints. The lower on-resistance (4.5 mOhm) provides improved performance. Verification of PCB layout and thermal management is recommended for high-current applications.

Q: What is the difference between SI4430BDY-T1-E3 and SI4430BDY-T1-GE3?

A: Both variants have identical electrical specifications. The difference is in packaging configuration and traceability documentation. E3 is supplied in Tape & Reel format, while GE3 is also supplied in Tape & Reel with different traceability options. Electrical performance and pin configuration are identical.

Q: Why does RSS140N03TB have lower power dissipation (2W) than the original IRF7477TRPBF (2.5W)?

A: Power dissipation rating is determined by the device's thermal characteristics and maximum junction temperature. RSS140N03TB achieves lower power dissipation due to superior on-resistance (6.7 mOhm vs. 8.5 mOhm). For applications operating at maximum current and elevated ambient temperatures, thermal analysis is necessary to confirm the 2W rating is sufficient.

Q: Can FDS6680A or FDS8880 be used if my application requires 14A continuous current?

A: FDS6680A is rated for 12.5A and FDS8880 for 11.6A continuous drain current. These devices are not suitable for applications requiring the full 14A specification of the IRF7477TRPBF. Use these substitutes only when actual operating current is confirmed to be within their rated limits.

Q: Is SI4894BDY-T1-E3 a suitable substitute?

A: SI4894BDY-T1-E3 is rated for only 8.9A continuous drain current, which is below the IRF7477TRPBF specification. This device is suitable only for applications where the actual operating current requirement does not exceed 8.9A. Verify your application's current requirements before selecting this substitute.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The original IRF7477TRPBF is REACH unaffected but predates ROHS3 classification due to its obsolete status.

Q: Do all substitute parts have the same package footprint?

A: Yes. All substitute parts are packaged in 8-SOIC (0.154", 3.90mm Width) with identical pin configuration and footprint to the IRF7477TRPBF. PCB layout modifications are not required for package compatibility.

Q: What is the MSL (Moisture Sensitivity Level) rating for substitute parts?

A: All substitute parts have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply.

Q: Which substitute offers the best thermal performance?

A: SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 offer the lowest on-resistance (4.5 mOhm), resulting in the lowest power dissipation at rated current. RSS140N03TB provides the second-best thermal performance with 6.7 mOhm on-resistance.

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