IRF7477TR N-Channel 30V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7477TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 14A continuous drain current at 25°C. This device is packaged in 8-SO (8-SOIC) surface mount configuration and belongs to the HEXFET® series. The IRF7477TR is classified as obsolete product status, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and component sourcing.

Substitute parts must maintain electrical compatibility across critical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance. Mechanical compatibility requires identical or equivalent surface mount packaging.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-Resistance (Rds On Max) @ 14A, 10V	8.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 4.5V	38	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥14A at 25°C
On-Resistance (Rds On): Must not exceed 8.5mOhm at rated current and 10V gate drive
Gate Threshold Voltage (Vgs(th)): Must be ≤2.5V @ 250µA
Gate Charge (Qg): Must be ≤38nC at specified gate voltage
Power Dissipation: Must support ≥2.5W thermal rating
Operating Temperature: Must span -55°C to 150°C minimum
Package: Must be 8-SOIC surface mount configuration

Secondary Compatibility Factors:

Input Capacitance (Ciss) and switching characteristics should remain within reasonable design margins
Moisture Sensitivity Level (MSL) of 1 (Unlimited) is acceptable
RoHS compliance status (ROHS3 Compliant preferred for new designs; RoHS non-compliant acceptable for legacy applications)

The substitute parts listed below meet these criteria with documented electrical equivalence and mechanical compatibility.

Parameter Comparison

Parameter	IRF7477TR (Main)	FDS6680A	FDS8880	RSS140N03TB	SI4430BDY-T1-E3	SI4430BDY-T1-GE3
Manufacturer	Infineon	onsemi	onsemi	Rohm	Vishay Siliconix	Vishay Siliconix
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	14	12.5	11.6	14	14	14
Rds On Max @ 10V (mOhm)	8.5	9.5	10	6.7	4.5	4.5
Vgs(th) @ 250µA (V)	2.5	3	2.5	2.5	3	3
Qg @ Specified Vgs (nC)	38 @ 4.5V	23 @ 5V	30 @ 10V	37 @ 5V	36 @ 4.5V	36 @ 4.5V
Power Dissipation Max (W)	2.5	2.5	2.5	2	1.6	1.6
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 (Vishay Siliconix TrenchFET® series) provide the closest electrical match to the IRF7477TR. Both devices maintain 30V/14A ratings with superior on-resistance performance (4.5mOhm vs. 8.5mOhm), lower gate charge (36nC vs. 38nC), and active product status with ROHS3 compliance. These parts are recommended for new designs and production continuity where thermal performance margins are critical.

Secondary Substitutes (Acceptable Compatibility):

The FDS6680A (onsemi PowerTrench®) and FDS8880 (onsemi PowerTrench®) are active products with ROHS3 compliance. The FDS6680A delivers 12.5A continuous current with 9.5mOhm on-resistance, suitable for applications where the 14A rating is not fully utilized. The FDS8880 provides 11.6A with 10mOhm on-resistance. Both maintain the 30V voltage rating and 2.5W power dissipation specification.

The RSS140N03TB (Rohm Semiconductor) matches the 14A current rating with superior 6.7mOhm on-resistance but specifies 2W power dissipation (lower than the 2.5W main part specification). This device is suitable for applications with reduced thermal loading.

Product Status Consideration:

All substitute parts listed carry active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The IRF7477TR obsolete status necessitates migration to one of these active alternatives for sustained production support.

Frequently Asked Questions (FAQ)

Q: Can FDS6680A replace IRF7477TR in all applications?

A: The FDS6680A is electrically compatible for applications requiring ≤12.5A continuous drain current. The 14A IRF7477TR rating cannot be fully utilized with FDS6680A. For designs operating at or near 14A, SI4430BDY-T1-E3 or SI4430BDY-T1-GE3 are preferred substitutes.

Q: What is the significance of on-resistance (Rds On) differences between substitutes?

A: Lower on-resistance reduces power dissipation and heat generation. SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 (4.5mOhm) dissipate less power than the IRF7477TR (8.5mOhm) at equivalent current levels. This improves thermal performance but does not affect functional compatibility. Higher on-resistance substitutes (FDS8880 at 10mOhm) may require thermal design review in power-limited applications.

Q: Are all substitute parts available in identical packaging?

A: Yes. All substitute parts are packaged in 8-SOIC (0.154", 3.90mm width) surface mount configuration, ensuring mechanical compatibility with existing PCB layouts. No footprint modifications are required.

Q: Why do some substitutes have lower power dissipation ratings?

A: Power dissipation rating reflects thermal design specifications. SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 specify 1.6W (vs. 2.5W for IRF7477TR) due to superior on-resistance characteristics. RSS140N03TB specifies 2W. These lower ratings do not indicate functional incompatibility; they reflect optimized thermal performance. Verify thermal requirements in your specific application.

Q: What is the impact of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (23nC for FDS6680A, 30nC for FDS8880, 36nC for SI4430 series) enables faster switching with reduced driver power consumption. Higher gate charge (38nC for IRF7477TR) requires slightly more driver current but does not prevent substitution. Gate driver circuits designed for 38nC will operate reliably with lower Qg substitutes.

Q: Is RoHS compliance mandatory for substitution?

A: For new designs and production continuity, ROHS3-compliant substitutes (FDS6680A, FDS8880, RSS140N03TB, SI4430BDY-T1-E3, SI4430BDY-T1-GE3) are recommended. The IRF7477TR is RoHS non-compliant. Regulatory requirements vary by application and market; verify compliance obligations for your specific use case.

Q: Can I use RSS140N03TB if my design requires 2.5W power dissipation?

A: RSS140N03TB specifies 2W maximum power dissipation. If your thermal design requires 2.5W capability, this substitute is not suitable. SI4430BDY-T1-E3 or SI4430BDY-T1-GE3 (1.6W) or FDS6680A/FDS8880 (2.5W) are appropriate alternatives. Verify actual power dissipation in your circuit; rated maximum does not indicate required operating point.

Q: What is the difference between SI4430BDY-T1-E3 and SI4430BDY-T1-GE3?

A: Both devices are electrically identical with matching electrical specifications. The suffix designations (-E3 vs. -GE3) indicate packaging or manufacturing variants. Both are available in Tape & Reel (TR) configuration and carry active product status with ROHS3 compliance. Selection between these variants should be based on inventory availability and supplier preference.

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