IRF7477PBF N-Channel 30V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7477PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 14A continuous drain current in a surface mount 8-SO package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRF7477PBF belongs to the HEXFET® series and is designed for applications requiring moderate voltage and current switching capabilities with low on-resistance characteristics. Due to its obsolete status, active alternative parts from manufacturers including onsemi, Rohm Semiconductor, and Vishay Siliconix are available to maintain design continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-Resistance (Rds On) @ 14A, 10V	8.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 4.5V	38	nC
Input Capacitance (Ciss) @ 15V	2710	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7477PBF is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 14A or greater at 25°C
Package Type: 8-SOIC surface mount configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

On-Resistance (Rds On): 8.5mOhm or lower at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): 2.5V to 3V range
Gate Charge (Qg): 23nC to 38nC range
Input Capacitance (Ciss): 1220pF to 2710pF range
Power Dissipation: 1.6W to 3W range

Substitute parts are grouped into two categories based on current rating alignment and on-resistance performance relative to the IRF7477PBF baseline specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss (W)	Status
IRF7477PBF	Infineon	30	14	8.5	2.5	38	2710	2.5	Obsolete
FDS6680A	onsemi	30	12.5	9.5	3.0	23	1620	2.5	Active
FDS8880	onsemi	30	11.6	10.0	2.5	30	1235	2.5	Active
RSS125N03TB	Rohm Semiconductor	30	12.5	8.9	2.5	28	1670	2.0	Active
RSS140N03TB	Rohm Semiconductor	30	14	6.7	2.5	37	3150	2.0	Active
SI4430BDY-T1-E3	Vishay Siliconix	30	14	4.5	3.0	36	N/A	1.6	Active
SI4430BDY-T1-GE3	Vishay Siliconix	30	14	4.5	3.0	36	N/A	1.6	Active
SI4686DY-T1-GE3	Vishay Siliconix	30	18.2	9.5	3.0	26	1220	3.0	Active

Engineering Selection Recommendations

Direct Equivalents (Highest Compatibility):

The SI4430BDY-T1-E3 and SI4430BDY-T1-GE3 from Vishay Siliconix provide the closest electrical match to the IRF7477PBF. Both parts maintain identical 30V/14A ratings with superior on-resistance performance (4.5mOhm versus 8.5mOhm). These devices are active products with ROHS3 compliance and full temperature range support (-55°C to 150°C). The primary difference between these two variants is packaging designation (E3 versus GE3 suffix), with both available in 8-SOIC configuration.

The RSS140N03TB from Rohm Semiconductor matches the IRF7477PBF current rating (14A) and voltage specification (30V) with improved on-resistance (6.7mOhm). This part is active and ROHS3 compliant. Operating temperature range extends to 150°C. Power dissipation is rated at 2W, lower than the original part.

Secondary Alternatives (Reduced Current Rating):

The FDS6680A and RSS125N03TB both provide 12.5A continuous drain current, representing a 10.7% reduction from the IRF7477PBF specification. These parts maintain 30V voltage rating and are suitable for applications where current margin exists. FDS6680A is onsemi PowerTrench® technology with 9.5mOhm on-resistance. RSS125N03TB is Rohm technology with 8.9mOhm on-resistance and lower power dissipation (2W).

The FDS8880 from onsemi provides 11.6A continuous drain current with 10mOhm on-resistance. This part is active and ROHS3 compliant with 2.5W power dissipation matching the original specification.

Higher Current Alternative:

The SI4686DY-T1-GE3 from Vishay Siliconix offers 18.2A continuous drain current, providing 30% additional current capacity. This part maintains 30V voltage rating and is suitable for applications requiring design margin or future current growth. On-resistance is 9.5mOhm at 13.8A/10V. Power dissipation reaches 3W (Ta) or 5.2W (Tc), exceeding the original part specification.

Compliance and Status:

All recommended substitute parts are active products with ROHS3 compliance and REACH unaffected status. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code, matching the original part's regulatory profile. Moisture sensitivity level is 1 (Unlimited) across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can the FDS6680A replace the IRF7477PBF in all applications?

A: The FDS6680A provides 12.5A continuous drain current versus the IRF7477PBF's 14A rating. This represents a 10.7% reduction in current capacity. Substitution is valid only if the application's maximum drain current does not exceed 12.5A. On-resistance is slightly higher (9.5mOhm versus 8.5mOhm), resulting in marginally increased power dissipation. Both parts maintain 30V voltage rating and -55°C to 150°C operating range.

Q: What is the primary advantage of SI4430BDY-T1-E3 over the IRF7477PBF?

A: The SI4430BDY-T1-E3 maintains identical voltage (30V) and current (14A) ratings while providing superior on-resistance performance (4.5mOhm versus 8.5mOhm). This 47% reduction in on-resistance directly reduces power dissipation and heat generation. Power dissipation is rated at 1.6W compared to 2.5W for the original part. The SI4430BDY-T1-E3 is an active product with full compliance certifications, whereas the IRF7477PBF is obsolete.

Q: Are all substitute parts available in the same 8-SOIC package?

A: Yes. All recommended substitute parts are packaged in 8-SOIC (0.154", 3.90mm Width) surface mount configuration, matching the IRF7477PBF package specification. This ensures mechanical and electrical compatibility with existing PCB layouts without requiring board redesign.

Q: What is the difference between SI4430BDY-T1-E3 and SI4430BDY-T1-GE3?

A: Both parts are electrically identical with 30V/14A ratings and 4.5mOhm on-resistance. The difference is in the packaging designation suffix (E3 versus GE3). Both are available in 8-SOIC configuration and are active products. Selection between these variants depends on supplier availability and packaging preference (Tape & Reel format).

Q: Can the RSS140N03TB be used as a direct replacement?

A: Yes. The RSS140N03TB matches the IRF7477PBF's 30V voltage and 14A current ratings. On-resistance is superior (6.7mOhm versus 8.5mOhm), and power dissipation is lower (2W versus 2.5W). The part is active and ROHS3 compliant. The 8-SOIC package is identical. This part is suitable for direct substitution in existing designs.

Q: Should I use SI4686DY-T1-GE3 if higher current capacity is needed?

A: The SI4686DY-T1-GE3 provides 18.2A continuous drain current, offering 30% additional capacity beyond the IRF7477PBF's 14A rating. This part maintains 30V voltage specification and 8-SOIC packaging. On-resistance is 9.5mOhm, and power dissipation reaches 3W (Ta) or 5.2W (Tc). This part is suitable for applications requiring design margin or future current growth, but is not necessary for direct replacement of existing 14A designs.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) ranges from 23nC to 38nC across substitute parts. The IRF7477PBF specifies 38nC at 4.5V. Lower gate charge values (such as 23nC in FDS6680A or 26nC in SI4686DY-T1-GE3) result in faster switching transitions and reduced gate drive power requirements. Higher gate charge values require longer switching times and increased gate drive current. Selection depends on the gate driver circuit's current capability and the application's switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts carry RoHS3 compliance certification. The IRF7477PBF does not specify RoHS status. All substitute parts are REACH unaffected and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications as the original part.

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