IRF7471TR Equivalent & Substitute Parts

Part Overview

The IRF7471TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 10A continuous drain current. This device is packaged in an 8-SO surface mount configuration and is designed for general-purpose switching applications. The IRF7471TR is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package dimensions to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	10	A
Rds On (Max) @ 10A, 10V	13	mOhm
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7471TR are selected based on the following critical parameters that define functional equivalence:

Primary Matching Criteria:

FET Type: N-Channel (required)
Drain-to-Source Voltage (Vdss): 40V minimum (40V or higher acceptable)
Continuous Drain Current (Id): 10A minimum at 25°C (equal or higher acceptable)
Package Type: 8-SOIC surface mount (identical footprint required)
Mounting Type: Surface Mount (required)

Secondary Compatibility Factors:

Rds On (Max): Lower or equal values indicate improved performance
Power Dissipation: Equal or higher ratings ensure thermal compatibility
Operating Temperature Range: Must encompass -55°C to 150°C minimum
Gate Charge (Qg): Lower values reduce drive circuit stress
Input Capacitance (Ciss): Lower values improve switching speed

The three substitute parts listed (AO4484, FDS4480, FDS5670) meet the primary matching criteria. FDS5670 operates at 60V Vdss, which exceeds the 40V requirement and is acceptable for applications not requiring voltage derating. All substitutes are available in active product status with modern compliance certifications.

Parameter Comparison

Parameter	IRF7471TR	AO4484	FDS4480	FDS5670	Unit
Manufacturer	Infineon	Alpha & Omega	onsemi	onsemi	—
Product Status	Obsolete	Active	Active	Active	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	40	40	40	60	V
Id @ 25°C	10	10	10.8	10	A
Rds On (Max) @ Id, 10V	13	10	12	14	mOhm
Vgs(th) (Max) @ 250µA	3	3	5	4	V
Gate Charge (Qg) (Max)	32	37	41	70	nC
Input Capacitance (Ciss) (Max)	2820	1950	1686	2900	pF
Power Dissipation (Max)	2.5	1.7	2.5	2.5	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 175	-55 to 150	°C
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

AO4484 (Alpha & Omega Semiconductor Inc.)

The AO4484 is the closest functional equivalent to the IRF7471TR. It matches the 40V Vdss and 10A Id ratings exactly, operates across the same temperature range (-55°C to 150°C), and is packaged identically in 8-SOIC. The AO4484 demonstrates superior electrical performance with lower Rds On (10 mOhm vs. 13 mOhm) and reduced input capacitance (1950 pF vs. 2820 pF), resulting in improved efficiency and faster switching characteristics. The device is in active production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Power dissipation is reduced to 1.7W, providing thermal margin in applications. This part is recommended as the primary substitute for direct replacement applications.

FDS4480 (onsemi PowerTrench® Series)

The FDS4480 maintains 40V Vdss rating with enhanced current capability (10.8A vs. 10A), providing design margin for transient conditions. Rds On performance is competitive at 12 mOhm. The device extends operating temperature to 175°C, offering superior thermal headroom compared to the IRF7471TR. Gate charge is higher at 41 nC, which may require drive circuit evaluation in high-frequency applications. FDS4480 is in active production with ROHS3 compliance. This part is suitable for applications requiring higher current capacity or extended temperature operation.

FDS5670 (onsemi PowerTrench® Series)

The FDS5670 operates at 60V Vdss, exceeding the IRF7471TR specification by 50%. This higher voltage rating is acceptable for applications where the circuit operates below 40V, providing additional voltage margin and component stress reduction. Current rating matches at 10A. Rds On is slightly higher at 14 mOhm. Gate charge increases significantly to 70 nC due to higher voltage rating, requiring drive circuit verification. Input capacitance rises to 2900 pF. FDS5670 is in active production with ROHS3 compliance. This part is recommended only for applications where the 60V rating provides design benefits and where gate drive capability is confirmed.

All three substitutes are available in active production status, ensuring supply chain continuity. All are ROHS3 compliant, addressing regulatory requirements that the obsolete IRF7471TR does not meet.

Frequently Asked Questions (FAQ)

Q: Can the AO4484 be used as a direct replacement for the IRF7471TR without circuit modifications?

A: Yes. The AO4484 matches the critical electrical parameters (40V Vdss, 10A Id) and is packaged identically in 8-SOIC. The improved Rds On and reduced input capacitance provide performance benefits without requiring design changes. Verify gate drive voltage compatibility (both support ±20V Vgs maximum).

Q: What is the difference between the 40V-rated substitutes (AO4484, FDS4480) and the 60V-rated FDS5670?

A: The 40V-rated parts match the IRF7471TR voltage specification exactly. The FDS5670 at 60V provides additional voltage margin, reducing component stress in circuits operating below 40V. However, the higher voltage rating increases gate charge and input capacitance, which may affect switching speed and drive circuit requirements. Select based on circuit voltage requirements and drive capability.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts (AO4484, FDS4480, FDS5670) are ROHS3 compliant. The original IRF7471TR is RoHS non-compliant. Substitution with any of these parts addresses regulatory compliance requirements for new designs and production.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The IRF7471TR requires 32 nC at 4.5V. AO4484 requires 37 nC at 10V, FDS4480 requires 41 nC at 10V, and FDS5670 requires 70 nC at 10V. Higher gate charge increases drive circuit current demand and switching time. Verify that the existing gate driver can supply the required charge at the specified voltage and frequency.

Q: Can FDS5670 be used in a 40V circuit?

A: Yes. The FDS5670 is rated for 60V Vdss, so it operates safely in 40V circuits. The higher voltage rating provides margin and reduces component stress. However, the increased gate charge (70 nC vs. 32 nC) and input capacitance (2900 pF vs. 2820 pF) may require gate driver verification to ensure adequate drive capability at the intended switching frequency.

Q: What is the package compatibility between these parts?

A: All four parts (IRF7471TR, AO4484, FDS4480, FDS5670) use the 8-SOIC package with identical footprint dimensions (0.154" width, 3.90mm). PCB layout and component placement require no modification for substitution.

Q: Which substitute offers the best thermal performance?

A: AO4484 offers the lowest power dissipation at 1.7W (vs. 2.5W for IRF7471TR), providing the best thermal performance. FDS4480 and FDS5670 maintain 2.5W dissipation. Lower power dissipation reduces junction temperature and extends device lifetime in thermally constrained applications.

Q: Are there inventory considerations for these substitutes?

A: Yes. AO4484 has 12,300 pieces in stock, FDS4480 has 4,631 pieces, and FDS5670 has 21,071 pieces. FDS5670 offers the highest inventory availability. All parts are in active production, ensuring long-term supply continuity.

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