IRF7470TR Equivalent & Substitute Parts

Part Overview

The IRF7470TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 10A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is designed for general-purpose switching applications requiring moderate power dissipation up to 2.5W.

The IRF7470TR is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7470TR
Infineon TechnologiesIn Stock: 2165IRF7470TR Datasheet
IRF7470TR
Current Part
IRF7470TRPBF
International RectifierIn Stock: 25432IRF7470TRPBF Datasheet
IRF7470TRPBF
Parametric Equivalent
AO4480
UMWIn Stock: 65663AO4480 Datasheet
AO4480
MFR Recommended
FDS4480
onsemiIn Stock: 4696FDS4480 Datasheet
FDS4480
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 10 A
On-State Resistance (Rds On) @ 10A, 10V 13 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Gate Charge (Qg) @ 4.5V 44 nC
Maximum Gate Voltage (Vgs) ±12 V
Input Capacitance (Ciss) @ 20V 3430 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOIC
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7470TR is determined by the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
  • Package Type: Must be 8-SOIC or 8-SO (0.154", 3.90mm width)
  • Mounting Type: Surface Mount
  • FET Type: N-Channel MOSFET

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): Minimum 10A at 25°C
  • On-State Resistance (Rds On): Maximum 13mOhm at rated current and gate voltage
  • Operating Temperature Range: Must support -55°C to 150°C minimum
  • Gate Voltage Rating (Vgs): Must accommodate ±12V operation

Substitute parts are classified into two categories:

Parametric Equivalent: IRF7470TRPBF matches all electrical specifications and package requirements identically to the main part. This part is manufactured by International Rectifier and maintains active product status.

Manufacturer Recommended Substitutes: AO4480 and FDS4480 provide functional equivalence with enhanced or comparable electrical performance within the same package footprint. These parts exceed minimum current ratings and maintain compatible voltage specifications.

Parameter Comparison

Parameter IRF7470TR IRF7470TRPBF AO4480 FDS4480
Manufacturer Infineon Technologies International Rectifier UMW onsemi
Product Status Obsolete Active Active Active
Vdss (V) 40 40 40 40
Id @ 25°C (A) 10 10 14 10.8
Rds On @ rated Id, 10V (mOhm) 13 13 12 12
Vgs(th) @ 250µA (V) 2 2 2.5 5
Qg @ specified Vgs (nC) 44 @ 4.5V 44 @ 4.5V 22 @ 10V 41 @ 10V
Vgs (Max) (V) ±12 ±12 ±20 +30, -20
Ciss @ 20V (pF) 3430 3430 1920 1686
Power Dissipation (W) 2.5 2.5 3.1 2.5
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 175
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC
RoHS Status Non-compliant Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRF7470TRPBF is the direct parametric equivalent and primary substitute for the obsolete IRF7470TR. This part maintains identical electrical specifications and package configuration. IRF7470TRPBF carries active product status, ensuring continued availability and supply chain support. Selection of this part requires no circuit redesign or validation.

AO4480 is a manufacturer-recommended substitute offering enhanced performance characteristics. This part provides 14A continuous drain current (40% higher than the main part), improved on-state resistance of 12mOhm, and higher gate voltage rating of ±20V. AO4480 is ROHS3 compliant and carries active product status. The reduced input capacitance (1920 pF versus 3430 pF) results in lower gate charge requirements. This part is suitable for applications where improved thermal performance or higher current capability is beneficial.

FDS4480 is a manufacturer-recommended substitute from onsemi's PowerTrench® series. This part provides 10.8A continuous drain current, matching the main part's power dissipation specification of 2.5W. FDS4480 features on-state resistance of 12mOhm and extended operating temperature range to 175°C. This part is ROHS3 compliant with active product status. The reduced input capacitance (1686 pF) and lower gate charge (41 nC) support faster switching applications.

All three substitute parts are housed in identical 8-SOIC packages and maintain surface mount compatibility. Selection among these options depends on application-specific requirements for current capacity, thermal performance, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can IRF7470TRPBF be used as a direct replacement for IRF7470TR without circuit modification?

A: Yes. IRF7470TRPBF is a parametric equivalent with identical electrical specifications, gate charge, input capacitance, and power dissipation ratings. The 8-SOIC package footprint is identical. No circuit redesign is required.

Q: What is the primary advantage of selecting AO4480 over IRF7470TRPBF?

A: AO4480 provides higher continuous drain current (14A versus 10A), lower on-state resistance (12mOhm versus 13mOhm), and higher gate voltage rating (±20V versus ±12V). Additionally, AO4480 features reduced input capacitance (1920 pF versus 3430 pF), resulting in lower switching losses. AO4480 is ROHS3 compliant, whereas IRF7470TR is non-compliant.

Q: Is FDS4480 suitable for high-temperature applications?

A: FDS4480 supports operating temperatures up to 175°C, compared to 150°C for IRF7470TR and IRF7470TRPBF. This extended temperature range makes FDS4480 suitable for applications requiring higher thermal margins or operation in elevated ambient conditions.

Q: Are all substitute parts available in the same package configuration?

A: Yes. IRF7470TRPBF, AO4480, and FDS4480 are all housed in 8-SOIC packages with 0.154" (3.90mm) width. PCB footprints are compatible without modification.

Q: What is the significance of the reduced gate charge in AO4480 and FDS4480?

A: Lower gate charge (22 nC for AO4480 and 41 nC for FDS4480 versus 44 nC for IRF7470TR) reduces the energy required to switch the transistor on and off. This results in lower gate driver power consumption and faster switching transitions, beneficial for high-frequency switching applications.

Q: Which substitute part should be selected for new designs?

A: For new designs, either AO4480 or FDS4480 is recommended. Both parts carry active product status, ROHS3 compliance, and enhanced electrical performance. AO4480 is preferred for applications requiring maximum current capacity and lower gate charge. FDS4480 is preferred for applications requiring extended temperature operation or compatibility with onsemi supply chains.

Q: Can these parts be used interchangeably in existing production?

A: IRF7470TRPBF provides direct interchangeability without validation. AO4480 and FDS4480 require verification that enhanced specifications (higher current, lower Rds On, reduced capacitance) do not introduce unintended circuit behavior, particularly in timing-sensitive or current-limited applications.

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