IRF7470PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7470PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 10A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in the 8-SO package. The IRF7470PBF has been discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and procurement.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and gate charge specifications, while preserving the surface mount 8-SOIC package form factor.

Substiute Parts

IRF7470PBF

Infineon TechnologiesIn Stock: 1592IRF7470PBF Datasheet

Current PartRFQ

AO4480

UMWIn Stock: 65663AO4480 Datasheet

MFR RecommendedRFQ

DMT6016LSS-13

Diodes IncorporatedIn Stock: 80373DMT6016LSS-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7470PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology required
• Drain to Source Voltage (Vdss): Minimum 40V rating (equal or higher acceptable)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) surface mount form factor
• Operating Temperature Range: -55°C to 150°C (TJ) minimum
• Mounting Type: Surface Mount

Performance Parameters for Functional Equivalence:

• Continuous Drain Current (Id) @ 25°C: Minimum 10A capability
• Rds On (Max) @ 10V: Comparable on-resistance for thermal and efficiency performance
• Gate Charge (Qg): Lower values indicate improved switching characteristics
• Power Dissipation (Max): Thermal capability for application requirements

The identified substitute parts meet the mandatory compatibility criteria and provide equivalent or superior electrical performance within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

AO4480 (UMW) - Primary Substitute

The AO4480 provides the closest electrical match to the IRF7470PBF with identical 40V Vdss rating and superior continuous drain current capability (14A versus 10A). On-resistance is marginally lower (12 mOhm versus 13 mOhm at 10V), and gate charge is significantly reduced (22 nC versus 44 nC), indicating improved switching performance. The device maintains full RoHS3 compliance and active product status with high inventory availability (65,625 pcs). The 8-SOIC package form factor is identical, enabling direct PCB layout compatibility.

DMT6016LSS-13 (Diodes Incorporated) - Secondary Substitute

The DMT6016LSS-13 offers a higher voltage rating (60V Vdss) suitable for applications requiring additional voltage margin. Continuous drain current is slightly lower (9.2A versus 10A), and on-resistance is higher (18 mOhm versus 13 mOhm at 10V), resulting in increased thermal dissipation. Gate charge is substantially lower (17 nC versus 44 nC), providing superior switching characteristics. The device maintains full RoHS3 compliance and active product status with extensive inventory availability (80,299 pcs). The 8-SOIC package form factor is identical.

Both substitute parts are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with identical HTSUS coding (8541.29.0095), matching the regulatory and compliance profile of the original IRF7470PBF.

Frequently Asked Questions (FAQ)

Q: Can the AO4480 be used as a direct replacement for the IRF7470PBF?

A: Yes. Both devices share identical 40V Vdss rating, 8-SOIC package form factor, and surface mount configuration. The AO4480 exceeds the 10A continuous drain current requirement with 14A capability and provides lower on-resistance (12 mOhm versus 13 mOhm) and reduced gate charge (22 nC versus 44 nC), making it functionally superior for the same application space.

Q: What is the primary difference between the AO4480 and DMT6016LSS-13?

A: The DMT6016LSS-13 features a higher 60V Vdss rating compared to the 40V rating of both the IRF7470PBF and AO4480. This higher voltage rating provides additional design margin for applications with voltage transients or overshoot conditions. However, the DMT6016LSS-13 exhibits higher on-resistance (18 mOhm versus 13 mOhm) and slightly lower continuous drain current (9.2A versus 10A). Both devices share identical 8-SOIC packaging and operating temperature range.

Q: Are there any thermal considerations when substituting these parts?

A: Power dissipation ratings differ across the three devices: IRF7470PBF (2.5W), AO4480 (3.1W), and DMT6016LSS-13 (1.5W). The AO4480 provides the highest thermal capability. The DMT6016LSS-13, despite lower power dissipation rating, exhibits higher on-resistance, which may increase junction temperature under high current conditions. Thermal design verification is necessary for applications operating near maximum current specifications.

Q: Do all three devices share identical package dimensions?

A: Yes. All three devices use the 8-SOIC package with 0.154" (3.90mm) width specification. PCB footprints are identical, enabling direct component substitution without layout modifications.

Q: What is the gate charge significance when selecting between these substitutes?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRF7470PBF requires 44 nC at 4.5V, while both substitutes require significantly less (AO4480: 22 nC at 10V; DMT6016LSS-13: 17 nC at 10V). Lower gate charge reduces switching losses and improves efficiency in high-frequency switching applications, particularly in power conversion circuits.

Q: Are all devices RoHS3 compliant?

A: Yes. The IRF7470PBF, AO4480, and DMT6016LSS-13 are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, REACH unaffected status, and EAR99 export classification.

Q: Which substitute should be selected for new designs?

A: The AO4480 is recommended for new designs requiring direct electrical equivalence to the IRF7470PBF, as it provides matching voltage rating, superior current capability, and active product status with extensive inventory. The DMT6016LSS-13 is suitable for applications requiring higher voltage margin (60V) or where lower gate charge is prioritized for switching efficiency.