IRF7469 Equivalent & Substitute Parts Reference

Part Overview

The IRF7469 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 9A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating package variations.

Key Parameters

Parameter	IRF7469 Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	9	A (Ta)
Rds On (Max) @ Id, Vgs	17	mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23	nC @ 4.5V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	2000	pF @ 20V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF7469 is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V minimum
Gate-Source Voltage (Vgs): ±20V maximum rating
Mounting Type: Surface Mount
Operating Temperature Range: Minimum -55°C to 150°C (TJ)

Performance Parameters:

Continuous Drain Current (Id): Equal to or greater than 9A
On-Resistance (Rds On): Lower or equal values preferred for thermal efficiency
Gate Charge (Qg): Comparable values for switching characteristics
Input Capacitance (Ciss): Comparable values for circuit design

Compliance Considerations:

Product Status: Active status preferred for long-term availability
RoHS Compliance: ROHS3 compliant substitutes recommended for new designs
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) maintained

The substitute parts identified (RS6G100BGTB1, RS6G120BGTB1, and RSS100N03TB) meet these criteria with variations in current capacity, on-resistance, and package configuration that allow functional equivalence within specified application parameters.

Parameter Comparison

Parameter	IRF7469	RS6G100BGTB1	RS6G120BGTB1	RSS100N03TB	Unit
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET	MOSFET	MOSFET	MOSFET	—
Drain to Source Voltage (Vdss)	40	40	40	30	V
Current - Continuous Drain (Id) @ 25°C	9 (Ta)	100 (Tc)	120 (Tc)	10 (Ta)	A
Rds On (Max) @ Id, Vgs	17 @ 9A, 10V	3.4 @ 90A, 10V	1.34 @ 90A, 10V	13 @ 10A, 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	2.5 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	23 @ 4.5V	24 @ 10V	67 @ 10V	14 @ 5V	nC
Vgs (Max)	±20	±20	±20	20	V
Input Capacitance (Ciss) (Max) @ Vds	2000 @ 20V	1510 @ 20V	4240 @ 20V	1070 @ 10V	pF
Power Dissipation (Max)	2.5 (Ta)	3 (Ta), 59 (Tc)	104 (Tc)	2 (Ta)	W
Operating Temperature	-55 to 150	150	150	150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	8-SOIC	8-PowerTDFN	8-PowerTDFN	8-SOIC	—
Product Status	Obsolete	Active	Active	Active	—
RoHS Status	Non-compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

RS6G100BGTB1 (Rohm Semiconductor): This substitute provides 40V Vdss rating matching the IRF7469 with significantly higher continuous drain current (100A vs. 9A). The on-resistance is substantially lower (3.4 mOhm vs. 17 mOhm), resulting in improved thermal efficiency. Product status is active, ensuring long-term availability. Package configuration is 8-PowerTDFN, which differs from the original 8-SOIC but maintains surface mount compatibility. RoHS compliance status is not specified in provided data. Gate charge is comparable (24 nC vs. 23 nC), supporting similar switching characteristics.

RS6G120BGTB1 (Rohm Semiconductor): This substitute maintains 40V Vdss rating with the highest continuous drain current (120A) among substitutes. On-resistance is the lowest (1.34 mOhm), providing superior thermal performance. Product status is active with ROHS3 compliance certification, meeting modern regulatory requirements. Package is 8-PowerTDFN. Gate charge is elevated (67 nC vs. 23 nC), indicating increased switching losses that must be evaluated for specific circuit applications. Input capacitance is significantly higher (4240 pF vs. 2000 pF), affecting gate drive requirements.

RSS100N03TB (Rohm Semiconductor): This substitute provides the closest electrical match to the IRF7469 in terms of current rating (10A vs. 9A) and on-resistance (13 mOhm vs. 17 mOhm). Drain-to-source voltage is reduced to 30V, limiting application to circuits with lower voltage requirements. Product status is active with ROHS3 compliance. Package is 8-SOIC, matching the original form factor. Gate charge is lower (14 nC vs. 23 nC), potentially reducing switching losses. This part is suitable for direct replacement in 30V or lower voltage applications.

Selection Basis:

For applications requiring exact 40V rating and minimal design changes: RS6G100BGTB1 or RS6G120BGTB1
For applications with 30V or lower voltage requirements and package compatibility: RSS100N03TB
For new designs requiring regulatory compliance: RS6G120BGTB1 (ROHS3 certified) or RSS100N03TB (ROHS3 certified)
For thermal-constrained applications: RS6G120BGTB1 (lowest on-resistance)

Frequently Asked Questions (FAQ)

Q1: Can the IRF7469 be directly replaced with RS6G100BGTB1 or RS6G120BGTB1?

A: Direct replacement requires PCB layout evaluation. While electrical parameters are compatible (40V Vdss, ±20V Vgs, surface mount), the package changes from 8-SOIC to 8-PowerTDFN. Pin assignments must be verified against the original schematic. The higher current ratings and lower on-resistance of these parts are backward-compatible with the IRF7469 application, but thermal management and gate drive circuits may require adjustment due to increased capacitance values.

Q2: What is the significance of the different current ratings (9A, 100A, 120A)?

A: Current ratings indicate the maximum continuous drain current the device can handle at specified conditions. The IRF7469 is rated for 9A at 25°C (Ta). Substitute parts with higher ratings (100A, 120A) can safely operate in the same application without exceeding their current limits. Lower-rated substitutes would not be acceptable. Higher ratings provide design margin and improved thermal performance through lower on-resistance.

Q3: Why does RSS100N03TB have a 30V Vdss rating instead of 40V?

A: RSS100N03TB is a lower voltage variant optimized for 30V applications. It cannot be used as a direct substitute for the IRF7469 in circuits requiring 40V blocking capability. This part is suitable only for applications with maximum operating voltages of 30V or lower. Attempting to use it in a 40V circuit risks device failure.

Q4: What is the impact of different on-resistance values?

A: On-resistance (Rds On) determines power dissipation during conduction. Lower on-resistance reduces heat generation. The IRF7469 has 17 mOhm, while RS6G120BGTB1 has 1.34 mOhm. In high-current applications, this difference significantly reduces thermal load. However, lower on-resistance typically correlates with higher gate charge and input capacitance, requiring more robust gate drive circuits.

Q5: Are there package compatibility concerns?

A: Yes. The IRF7469 uses 8-SOIC packaging, while RS6G100BGTB1 and RS6G120BGTB1 use 8-PowerTDFN. These packages have different footprints and pin configurations. RSS100N03TB maintains 8-SOIC compatibility. Package changes require PCB redesign. Verify pin-to-pin correspondence before layout modifications.

Q6: What does RoHS compliance mean for substitution?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the device meets environmental regulations restricting lead and other hazardous materials. The IRF7469 is RoHS non-compliant. RS6G120BGTB1 and RSS100N03TB are ROHS3 compliant, meeting current regulatory standards. For new designs and applications subject to environmental regulations, ROHS3-compliant substitutes are required.

Q7: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the device on or off. The IRF7469 requires 23 nC at 4.5V. RS6G120BGTB1 requires 67 nC at 10V, significantly higher. This affects gate drive circuit design, requiring higher current capability or longer switching times. Lower gate charge (RSS100N03TB at 14 nC) reduces gate drive requirements but may not be suitable for high-frequency applications.

Q8: What is the difference between Ta and Tc temperature ratings?

A: Ta refers to ambient temperature, while Tc refers to case temperature. The IRF7469 specifies -55°C to 150°C (TJ, junction temperature). RS6G100BGTB1 and RS6G120BGTB1 specify continuous drain current at Tc (case temperature), indicating higher power dissipation capability. This distinction affects thermal management calculations and maximum operating current under real-world conditions.

Q9: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute has distinct electrical characteristics. Interchangeability is limited to applications where the specific electrical parameters (voltage, current, on-resistance, capacitance) are compatible with circuit requirements. Mixing different substitutes in the same design requires verification that each part meets the specific circuit demands at its location.

Q10: What compliance certifications should be verified before selecting a substitute?

A: Verify RoHS status (ROHS3 compliance for new designs), REACH status (all listed parts show REACH Unaffected), ECCN classification (all listed parts are EAR99), and HTSUS codes (all listed parts are 8541.29.0095). Moisture Sensitivity Level (MSL) is Level 1 (Unlimited) for all parts, indicating no special moisture handling requirements. Product status (Active vs. Obsolete) determines long-term availability and supply chain reliability.

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