IRF7468TR Equivalent & Substitute Parts

Part Overview

The IRF7468TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 9.4A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics.

The IRF7468TR is classified as an obsolete product. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7468TR

Infineon TechnologiesIn Stock: 3330IRF7468TR Datasheet

Current PartRFQ

FDS4480

onsemiIn Stock: 4696FDS4480 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7468TR are identified based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The substitution criteria are:

Primary Matching Parameters:

• Drain-to-Source Voltage (Vdss): 40V minimum
• Continuous Drain Current (Id): Equal to or greater than 9.4A
• On-Resistance (Rds On): Equal to or lower than 15.5 mOhm at rated conditions
• Package Type: 8-SOIC surface mount configuration
• Gate Threshold Voltage (Vgs(th)): Compatible with standard logic-level gate drive circuits
• Operating Temperature Range: Minimum -55°C to +150°C

Identified Substitute:

The FDS4480 manufactured by onsemi meets all primary matching parameters. This device provides equivalent or superior electrical performance while maintaining identical package geometry and mounting characteristics.

Parameter Comparison

Engineering Selection Recommendations

FDS4480 as Primary Substitute:

The FDS4480 is the recommended substitute for the IRF7468TR based on the following engineering criteria:

1. Electrical Compatibility: The FDS4480 meets or exceeds all critical electrical parameters. The continuous drain current rating of 10.8A exceeds the IRF7468TR requirement of 9.4A. The on-resistance of 12 mOhm is lower than the IRF7468TR specification of 15.5 mOhm, providing improved efficiency and reduced power dissipation in switching applications.

2. Package Compatibility: Both devices use identical 8-SOIC (0.154", 3.90mm width) surface mount packaging, enabling direct PCB layout compatibility without redesign.

3. Product Status and Supply: The FDS4480 is classified as an active product with confirmed inventory availability (4631 pieces in stock), ensuring reliable long-term supply compared to the obsolete IRF7468TR status.

4. Regulatory Compliance: The FDS4480 is ROHS3 compliant, meeting current environmental and regulatory requirements. The IRF7468TR is RoHS non-compliant, which may present compliance challenges for new designs or production in regulated markets.

5. Operating Temperature Range: The FDS4480 supports an extended operating temperature range of -55°C to 175°C, compared to the IRF7468TR range of -55°C to 150°C, providing additional thermal margin for demanding applications.

6. Gate Drive Considerations: The FDS4480 has a higher gate threshold voltage (5V maximum vs. 2V maximum) and wider gate voltage rating (±30V/-20V vs. ±12V). Existing gate drive circuits designed for the IRF7468TR must be evaluated to ensure compatibility with the FDS4480 threshold characteristics.

Frequently Asked Questions (FAQ)

Q1: Can the FDS4480 be used as a direct drop-in replacement for the IRF7468TR?

A: The FDS4480 is electrically and mechanically compatible with the IRF7468TR in terms of package footprint and pin configuration. However, gate drive circuit compatibility must be verified. The FDS4480 has a higher gate threshold voltage (5V vs. 2V), which may require adjustment of gate drive voltage levels or timing in existing circuits. Functional testing is required to confirm performance in the specific application.

Q2: What are the key electrical differences between these two devices?

A: The FDS4480 provides superior electrical performance: 15% higher continuous drain current (10.8A vs. 9.4A), 23% lower on-resistance (12 mOhm vs. 15.5 mOhm), and lower input capacitance (1686 pF vs. 2460 pF). These improvements result in reduced switching losses and improved thermal performance. The FDS4480 also supports a wider gate voltage range (±30V/-20V vs. ±12V).

Q3: Are there any package or mounting differences?

A: Both devices use identical 8-SOIC surface mount packaging with 0.154" (3.90mm) width. PCB footprints are directly compatible. No layout modifications are required for package substitution.

Q4: What is the significance of the product status difference?

A: The IRF7468TR is classified as obsolete, indicating that Infineon has discontinued production and support. The FDS4480 is an active product with ongoing manufacturing and supply chain support. Using an active product ensures long-term availability and reduces supply chain risk.

Q5: Does the FDS4480 meet current regulatory requirements?

A: Yes. The FDS4480 is ROHS3 compliant, meeting current environmental regulations. The IRF7468TR is RoHS non-compliant, which may create compliance issues for new designs or production in regulated markets. The FDS4480 also carries REACH Unaffected status, consistent with the IRF7468TR.

Q6: What is the impact of the extended operating temperature range of the FDS4480?

A: The FDS4480 supports operation up to 175°C junction temperature, compared to 150°C for the IRF7468TR. This 25°C additional margin provides improved thermal headroom in high-temperature applications and reduces the risk of thermal shutdown or performance degradation in demanding environments.

Q7: How do the gate charge characteristics compare?

A: The FDS4480 has a slightly higher gate charge (41 nC @ 10V vs. 34 nC @ 4.5V for the IRF7468TR). This difference is measured at different gate voltage levels, making direct comparison complex. Gate drive circuit design must account for the FDS4480 gate charge to ensure adequate drive current and switching speed.