IRF7468PBF N-Channel MOSFET 40V 9.4A Equivalent & Substitute Parts

Part Overview

The IRF7468PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 9.4A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7468PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and production continuity. Equivalent parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors to ensure direct substitution in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	9.4	A
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 9.4A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	2	V @ 250µA
Gate Charge (Qg) (Max)	34	nC @ 4.5V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	2460	pF @ 20V

Substitute Part Grouping Explanation

Substitution of the IRF7468PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 40V
Continuous Drain Current (Id): Must equal or exceed 9.4A at 25°C
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) surface mount
Power Dissipation: Must support minimum 2.5W (Ta)
Operating Temperature Range: Must encompass -55°C to 150°C minimum
RoHS3 Compliance: Required for regulatory alignment

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive requirements
Input Capacitance (Ciss): Affects switching speed and gate drive circuit design
Gate Threshold Voltage: Must be compatible with existing gate drive voltage levels

The FDS4480 manufactured by onsemi meets all primary substitution criteria and is identified as the manufacturer-recommended equivalent for the IRF7468PBF.

Parameter Comparison

Parameter	IRF7468PBF (Infineon)	FDS4480 (onsemi)	Compatibility
Drain to Source Voltage (Vdss)	40 V	40 V	Equal
Continuous Drain Current (Id) @ 25°C	9.4 A	10.8 A	FDS4480 exceeds requirement
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 9.4A, 10V	12 mOhm @ 10.8A, 10V	FDS4480 superior performance
Gate Threshold Voltage Vgs(th) (Max)	2 V @ 250µA	5 V @ 250µA	FDS4480 higher threshold
Gate Charge (Qg) (Max)	34 nC @ 4.5V	41 nC @ 10V	FDS4480 higher charge
Power Dissipation (Max)	2.5 W (Ta)	2.5 W (Ta)	Equal
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 175 °C (TJ)	FDS4480 extended range
Package Type	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	Identical
Input Capacitance (Ciss) (Max) @ Vds	2460 pF @ 20V	1686 pF @ 20V	FDS4480 lower capacitance
Product Status	Discontinued at DiGi Electronics	Active	FDS4480 actively supported
RoHS3 Compliance	Compliant	Compliant	Both compliant

Engineering Selection Recommendations

The FDS4480 is the qualified substitute for the IRF7468PBF based on the following engineering factors:

Electrical Compatibility: The FDS4480 meets or exceeds all critical electrical parameters. The 40V Vdss rating matches the original specification, while the 10.8A continuous drain current provides 14.9% additional current capacity beyond the 9.4A requirement. The lower Rds On value (12 mOhm versus 15.5 mOhm) results in reduced conduction losses and improved thermal performance.

Thermal Performance: Both devices are rated for 2.5W maximum power dissipation at ambient temperature. The FDS4480 supports an extended operating temperature range to 175°C (versus 150°C for the IRF7468PBF), providing additional thermal margin in high-temperature applications.

Package Compatibility: Both devices utilize identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging, enabling direct PCB layout compatibility without redesign.

Regulatory Compliance: The FDS4480 maintains RoHS3 compliance and REACH unaffected status, matching the original part's regulatory standing.

Product Availability: The FDS4480 is currently in active production status with 4631 pieces in stock, ensuring supply chain continuity compared to the discontinued IRF7468PBF.

Gate Drive Considerations: The FDS4480 exhibits a higher gate threshold voltage (5V versus 2V) and increased gate charge (41 nC versus 34 nC). Existing gate drive circuits must be verified to deliver adequate voltage and current to meet these specifications. The lower input capacitance (1686 pF versus 2460 pF) may improve switching speed characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDS4480 be used as a direct replacement for the IRF7468PBF without circuit modifications?

A: The FDS4480 is electrically and mechanically compatible for direct substitution in most applications. However, gate drive circuit verification is required due to the higher gate threshold voltage (5V versus 2V) and increased gate charge (41 nC versus 34 nC). Confirm that existing gate drive voltage and current capabilities meet FDS4480 specifications before implementation.

Q: What are the key differences between the IRF7468PBF and FDS4480?

A: The primary differences are: (1) Gate threshold voltage is higher on the FDS4480 (5V versus 2V), (2) Gate charge is higher on the FDS4480 (41 nC versus 34 nC), (3) Input capacitance is lower on the FDS4480 (1686 pF versus 2460 pF), (4) Continuous drain current is higher on the FDS4480 (10.8A versus 9.4A), (5) Operating temperature range is extended on the FDS4480 (-55 to 175°C versus -55 to 150°C). All other critical parameters including Vdss, power dissipation, and package type are identical.

Q: Are there any thermal performance differences between these devices?

A: Both devices are rated for 2.5W maximum power dissipation at ambient temperature. The FDS4480 exhibits lower on-resistance (12 mOhm versus 15.5 mOhm), which reduces conduction losses and improves thermal efficiency. The extended operating temperature range of the FDS4480 provides additional thermal margin in high-temperature environments.

Q: Is the 8-SOIC package identical between both parts?

A: Yes. Both the IRF7468PBF and FDS4480 use the 8-SOIC (0.154", 3.90mm Width) surface mount package. PCB layouts and footprints are directly compatible without modification.

Q: What compliance certifications apply to the FDS4480?

A: The FDS4480 is RoHS3 compliant and REACH unaffected, matching the regulatory status of the original IRF7468PBF. Both devices carry EAR99 export classification and HTSUS code 8541.29.0095.

Q: How does the gate charge difference affect circuit design?

A: The FDS4480 requires higher gate charge (41 nC versus 34 nC) to achieve full on-state conduction. Gate drive circuits must supply sufficient current to charge the gate capacitance within the required switching time. The lower input capacitance of the FDS4480 (1686 pF versus 2460 pF) may reduce gate drive power requirements despite the higher gate charge specification.

Q: What is the moisture sensitivity level for the FDS4480?

A: The FDS4480 has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), identical to the IRF7468PBF. This indicates minimal moisture sensitivity and no special handling or baking requirements prior to soldering.

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