IRF7468 Equivalent & Substitute Parts

Part Overview

The IRF7468 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 9.4A continuous drain current at 25°C. The device is housed in an 8-SO surface mount package and features a maximum on-resistance of 15.5mOhm at rated conditions. The IRF7468 is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating modern component availability and compliance standards.

Substiute Parts

IRF7468

Infineon TechnologiesIn Stock: 19633IRF7468 Datasheet

Current PartRFQ

FDS4480

onsemiIn Stock: 4696FDS4480 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7468 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
• Continuous Drain Current (Id): Must equal or exceed 9.4A at 25°C
• On-Resistance (Rds On): Must not exceed 15.5mOhm at rated gate voltage and current
• Package Type: Must be 8-SOIC surface mount configuration
• Power Dissipation: Must support minimum 2.5W at ambient temperature
• Operating Temperature Range: Must encompass -55°C to 150°C minimum

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Acceptable range determined by circuit drive requirements
• Gate Charge (Qg): Lower values preferred for reduced switching losses
• Input Capacitance (Ciss): Lower values preferred for faster switching response
• Gate Voltage Rating (Vgs Max): Must accommodate circuit drive voltage

The FDS4480 from onsemi meets all primary substitution criteria with improved electrical performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

The FDS4480 from onsemi is the qualified substitute for the obsolete IRF7468. Selection is based on the following engineering factors:

Electrical Equivalence: The FDS4480 exceeds the IRF7468 specifications across all critical parameters. The drain current rating of 10.8A exceeds the required 9.4A, and the on-resistance of 12mOhm is superior to the 15.5mOhm maximum of the IRF7468. Both devices maintain identical 40V Vdss ratings and 2.5W power dissipation limits, ensuring direct functional replacement in existing circuit topologies.

Compliance and Product Status: The FDS4480 is classified as an active product with ROHS3 compliance, addressing the non-compliant status of the obsolete IRF7468. This substitution enables compliance with current environmental and regulatory requirements for new production and design revisions.

Thermal Performance: The FDS4480 supports an extended operating temperature range of -55°C to 175°C, compared to the IRF7468 range of -55°C to 150°C. This provides additional thermal margin for applications operating at elevated junction temperatures.

Package Compatibility: Both devices utilize identical 8-SOIC surface mount packaging with 0.154" width and 3.90mm dimensions, enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the FDS4480 be used as a direct replacement for the IRF7468 without circuit modifications?

A: Yes. The FDS4480 meets or exceeds all electrical specifications of the IRF7468 while maintaining identical package geometry. No circuit modifications are required for functional substitution.

Q: What are the key performance improvements of the FDS4480 over the IRF7468?

A: The FDS4480 provides lower on-resistance (12mOhm versus 15.5mOhm), higher continuous drain current capability (10.8A versus 9.4A), lower input capacitance (1686pF versus 2460pF), and an extended operating temperature range (175°C versus 150°C maximum junction temperature).

Q: Are there any gate drive voltage considerations when substituting the FDS4480 for the IRF7468?

A: The FDS4480 has a higher gate threshold voltage of 5V compared to 2V for the IRF7468. Existing gate drive circuits must provide sufficient voltage to exceed this threshold. The FDS4480 also supports a wider gate voltage range (±30V/-20V versus ±12V), providing greater flexibility in drive circuit design.

Q: Does the FDS4480 require different PCB layout considerations?

A: No. Both devices use identical 8-SOIC packaging with matching pin configurations and footprints. Existing PCB layouts require no modification.

Q: What is the compliance status difference between these devices?

A: The IRF7468 is RoHS non-compliant, while the FDS4480 is ROHS3 compliant. This substitution addresses regulatory compliance requirements for new production.

Q: Are there inventory considerations for this substitution?

A: The IRF7468 is obsolete with limited remaining inventory. The FDS4480 is an active product with current manufacturing availability, ensuring long-term supply chain reliability.

Q: How does the gate charge difference affect circuit performance?

A: The FDS4480 has slightly higher gate charge (41nC versus 34nC), requiring marginally more charge delivery from the gate drive circuit. This difference is typically negligible in most applications and does not prevent direct substitution.