IRF7467TRPBF N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7467TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7467TRPBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors to ensure direct replacement capability in existing circuit designs.

Substiute Parts

IRF7467TRPBF

Infineon TechnologiesIn Stock: 27687IRF7467TRPBF Datasheet

Current PartRFQ

DMN3016LSS-13

Diodes IncorporatedIn Stock: 6860DMN3016LSS-13 Datasheet

MFR RecommendedRFQ

FDS6690A

onsemiIn Stock: 40000FDS6690A Datasheet

MFR RecommendedRFQ

FDS8878

Fairchild SemiconductorIn Stock: 32909FDS8878 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7467TRPBF is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 30V or higher to ensure safe operation within the original design envelope.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) of 11A or greater at 25°C to handle the same load conditions as the original device.

On-State Resistance (Rds On): The maximum Rds On specification at rated current and gate voltage must not exceed the original 12 mOhm value to maintain equivalent power dissipation and thermal performance.

Package and Mounting: All substitute parts must use the 8-SOIC surface mount package with identical pin configuration and footprint dimensions (0.154" width, 3.90mm) to ensure PCB compatibility without layout modifications.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range to maintain performance across all environmental conditions.

Gate Charge and Threshold Voltage: These parameters must remain within acceptable ranges to ensure compatible gate drive requirements and switching characteristics in the existing circuit.

The three substitute parts listed below meet these criteria and are classified as active products with current manufacturing availability.

Parameter Comparison

Engineering Selection Recommendations

FDS6690A (onsemi) provides the closest electrical match to the IRF7467TRPBF. This device maintains identical Vdss (30V) and Id (11A) ratings, matching power dissipation at 2.5W. The FDS6690A is classified as active with robust inventory availability (39,900 pcs). It carries ROHS3 compliance certification and is part of the PowerTrench® series. The slightly elevated Rds On specification (12.5 mOhm versus 12 mOhm) and reduced gate charge (16 nC) represent minor performance variations within acceptable engineering tolerances for most applications.

DMN3016LSS-13 (Diodes Incorporated) offers an alternative with identical Rds On performance (12 mOhm) and matching voltage rating (30V). The continuous drain current rating is slightly lower at 10.3A, which may limit suitability for designs operating at the full 11A specification. This device is active with good inventory (6,838 pcs) and carries ROHS3 compliance. The reduced power dissipation rating (1.5W) indicates lower thermal capability compared to the original part.

FDS8878 (Fairchild Semiconductor) is an active product with the highest inventory availability (32,800 pcs). While it maintains the 30V voltage rating and 2.5W power dissipation, the continuous drain current is rated at 10.2A with elevated Rds On (14 mOhm). This part is suitable for applications where current requirements do not exceed 10.2A and where the higher on-state resistance is acceptable.

All three substitute parts are classified as active products with current manufacturing support, ensuring long-term availability for production and design continuity. Selection should be based on specific application current requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the DMN3016LSS-13 be used in applications requiring the full 11A continuous current rating?

A: The DMN3016LSS-13 is rated for 10.3A continuous drain current, which is below the original 11A specification. Use of this part in designs requiring sustained 11A operation may result in thermal stress and reduced device reliability. The FDS6690A or FDS8878 are preferred for full 11A applications.

Q: What is the significance of the different gate charge specifications among the substitute parts?

A: Gate charge (Qg) affects the gate drive circuit requirements and switching speed. The FDS6690A exhibits lower gate charge (16 nC) compared to the original IRF7467TRPBF (32 nC), which may improve switching performance but requires verification that the existing gate drive circuit can accommodate the reduced charge requirement without modification.

Q: Are all substitute parts compatible with the existing PCB layout?

A: All substitute parts use the 8-SOIC package with identical footprint dimensions (0.154" width, 3.90mm). Direct PCB footprint compatibility is confirmed. However, thermal management considerations may differ due to variations in power dissipation ratings, particularly with the DMN3016LSS-13 (1.5W) compared to the original 2.5W specification.

Q: Which substitute part offers the best long-term availability?

A: The FDS6690A (onsemi) is classified as active with the highest current inventory (39,900 pcs) and carries ROHS3 compliance certification, indicating strong manufacturing commitment and regulatory alignment for future production requirements.

Q: How do the threshold voltage differences affect circuit operation?

A: The gate threshold voltage (Vgs(th)) varies among substitute parts: IRF7467TRPBF at 2V, DMN3016LSS-13 at 2.5V, and FDS6690A at 3V. These variations are within normal MOSFET specifications and do not typically require gate drive circuit modifications for standard applications. Verify gate drive voltage levels in designs with marginal gate voltage margins.

Q: Is thermal management different between the substitute parts?

A: The DMN3016LSS-13 has a lower maximum power dissipation rating (1.5W) compared to the original (2.5W) and the other substitutes (2.5W). Applications with high thermal loads should prioritize the FDS6690A or FDS8878 to maintain equivalent thermal performance and reliability margins.