IRF7467TR N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7467TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and belongs to the HEXFET® series. The IRF7467TR is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility across voltage ratings, current handling capability, thermal characteristics, and package form factor to ensure direct replacement without circuit redesign.

Substiute Parts

IRF7467TR

Infineon TechnologiesIn Stock: 874IRF7467TR Datasheet

Current PartRFQ

DMN3016LSS-13

Diodes IncorporatedIn Stock: 6860DMN3016LSS-13 Datasheet

MFR RecommendedRFQ

FDS6690A

onsemiIn Stock: 40000FDS6690A Datasheet

MFR RecommendedRFQ

FDS8878

Fairchild SemiconductorIn Stock: 32909FDS8878 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7467TR is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 30V to ensure safe operation within the same voltage domain.

Current Handling: Substitute parts must support continuous drain current (Id) at or above 11A at 25°C. Devices rated at 10.2A to 11A are functionally equivalent for most applications within the specified thermal envelope.

On-State Resistance (Rds On): The IRF7467TR specifies 12 mOhm maximum at 11A and 10V gate voltage. Substitute parts with Rds On values between 12 mOhm and 14.5 mOhm maintain comparable conduction losses and thermal performance.

Package Form Factor: All substitute parts must use 8-SOIC (0.154", 3.90mm Width) surface mount packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: All candidates maintain the -55°C to 150°C (TJ) operating range, ensuring thermal compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and driver requirements. Substitute parts with gate charge values between 16 nC and 32 nC and input capacitance between 897 pF and 2530 pF are acceptable within standard gate driver specifications.

FET Technology: All substitute parts use Metal Oxide Semiconductor (MOSFET) technology with N-Channel configuration, maintaining functional equivalence.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDS6690A (onsemi)

The FDS6690A is the optimal substitute for the IRF7467TR based on electrical parameter alignment and product status. This device matches the IRF7467TR in continuous drain current (11A), on-state resistance (12.5 mOhm), and power dissipation (2.5W). The FDS6690A is classified as active product status, ensuring long-term availability and supply chain continuity. The device is ROHS3 compliant, meeting current environmental and regulatory requirements. The 8-SOIC package form factor provides direct mechanical compatibility. Gate charge is reduced to 16 nC, improving switching efficiency compared to the original part. Input capacitance is lower at 1205 pF, reducing gate driver stress. The maximum gate voltage rating of ±20V provides enhanced gate drive margin compared to the IRF7467TR's ±12V specification.

Secondary Substitute: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 provides functional equivalence with continuous drain current of 10.3A, which is within acceptable tolerance for most applications requiring 11A nominal performance. On-state resistance is maintained at 12 mOhm, matching the IRF7467TR specification. This device is active product status with ROHS3 compliance. The 8-SOIC package ensures mechanical compatibility. Gate charge is reduced to 25.1 nC, and input capacitance is 1415 pF. The maximum gate voltage rating of ±20V exceeds the original specification. Power dissipation is rated at 1.5W, which is lower than the IRF7467TR's 2.5W rating; this characteristic requires thermal analysis in high-power applications to confirm suitability.

Tertiary Substitute: FDS8878 (Fairchild Semiconductor)

The FDS8878 provides functional equivalence with continuous drain current of 10.2A and on-state resistance of 14 mOhm. This device is active product status. The 8-SOIC package provides mechanical compatibility. Gate charge is 26 nC, and input capacitance is 897 pF, the lowest among all candidates. Power dissipation is rated at 2.5W, matching the IRF7467TR. The maximum gate voltage rating of ±20V provides enhanced margin. The slightly higher on-state resistance (14 mOhm versus 12 mOhm) results in marginally increased conduction losses; thermal analysis is recommended for high-current applications.

Compliance Considerations:

All three substitute parts are active product status, ensuring availability for new designs and production support. FDS6690A and DMN3016LSS-13 are ROHS3 compliant, meeting current environmental regulations. The original IRF7467TR is RoHS non-compliant; substitution with compliant alternatives supports regulatory alignment. All substitute parts maintain REACH unaffected status and EAR99 export classification, matching the original part's regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can the FDS6690A directly replace the IRF7467TR without PCB modifications?

A: Yes. The FDS6690A maintains identical 8-SOIC package dimensions (0.154", 3.90mm Width), identical Vdss rating (30V), and equivalent continuous drain current (11A). On-state resistance is comparable at 12.5 mOhm versus 12 mOhm. No PCB layout changes are required for mechanical or electrical compatibility.

Q: What is the impact of lower gate charge in substitute parts?

A: Lower gate charge (16 nC to 26 nC versus 32 nC in the IRF7467TR) reduces the charge that must be supplied by the gate driver circuit. This results in faster switching transitions and reduced gate driver power dissipation. Existing gate driver circuits designed for the IRF7467TR will operate with improved performance margins when driving substitute parts with lower gate charge.

Q: Is the DMN3016LSS-13 suitable for applications requiring exactly 11A continuous current?

A: The DMN3016LSS-13 is rated for 10.3A continuous drain current at 25°C, which is 0.7A below the IRF7467TR specification. For applications with strict 11A requirements, thermal analysis is necessary to confirm that the lower current rating does not exceed device junction temperature limits under worst-case operating conditions. The FDS6690A or FDS8878 are preferred for applications with firm 11A current requirements.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) ranges from 897 pF to 2530 pF across the candidate parts. Lower input capacitance reduces the capacitive load on the gate driver, enabling faster switching and reducing driver power dissipation. Circuits designed for the IRF7467TR's 2530 pF input capacitance will experience improved switching performance with substitute parts having lower Ciss values. No circuit modifications are required; performance improvement is automatic.

Q: Are all substitute parts available in the same packaging options as the IRF7467TR?

A: The IRF7467TR is specified in Tape & Reel (TR) packaging. FDS6690A is available in Cut Tape (CT) and Digi-Reel® packaging. DMN3016LSS-13 is available in Tape & Reel (TR) packaging. FDS8878 packaging format is not specified in the provided data. Verify packaging availability with component suppliers to match procurement requirements for automated assembly processes.

Q: What is the significance of RoHS compliance in selecting a substitute?

A: The IRF7467TR is RoHS non-compliant, indicating it may contain restricted substances such as lead. FDS6690A and DMN3016LSS-13 are ROHS3 compliant, confirming they meet current environmental regulations restricting hazardous substances. For new designs or production in regulated markets, ROHS3-compliant substitutes are required. For legacy system maintenance, non-compliant parts may be acceptable depending on regional regulations and customer requirements.

Q: Can the ±20V gate voltage rating of substitute parts be used to increase gate drive voltage?

A: The substitute parts' ±20V maximum gate voltage rating provides margin above the IRF7467TR's ±12V specification. However, gate drive voltage should be selected based on the specific application's switching speed and noise immunity requirements, not solely on the device's maximum rating. Standard gate drive voltages (5V, 10V, 12V, 15V) remain appropriate for all substitute parts. The higher rating provides design flexibility and safety margin but does not require increased gate drive voltage.

Q: What thermal considerations apply when substituting the DMN3016LSS-13 with its lower power dissipation rating?

A: The DMN3016LSS-13 is rated for 1.5W power dissipation versus 2.5W for the IRF7467TR. This lower rating reflects the device's thermal characteristics at specified operating conditions. In applications where the IRF7467TR operates near its 2.5W limit, the DMN3016LSS-13 may require enhanced thermal management (improved PCB copper area, heat sinking, or reduced ambient temperature) to maintain equivalent junction temperature. Thermal analysis comparing the two devices under actual application conditions is recommended before substitution in thermally constrained designs.