IRF7467 N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7467 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7467 is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A
On-Resistance (Rds On) @ 11A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 4.5V	32	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7467 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 11A at 25°C
On-Resistance (Rds On): Must not exceed 12mOhm at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range (2V to 3V @ 250µA)
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) surface mount configuration
Operating Temperature Range: Must support -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching; values between 8nC and 43nC are acceptable
Input Capacitance (Ciss): Lower values reduce gate drive requirements; range 680pF to 2530pF acceptable
Power Dissipation: Must support minimum 2.5W thermal load capability

All substitute parts listed maintain N-Channel MOSFET technology with metal oxide construction and are compatible with the IRF7467 electrical specifications and mechanical footprint.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ Vgs (nC)	Power Dissipation (W)	Status	RoHS Compliance
IRF7467	Infineon Technologies	30	11	12	2	32 @ 4.5V	2.5	Obsolete	Non-compliant
DMG4710SSS-13	Diodes Incorporated	30	8.8	12.5	2.3	43 @ 10V	1.54	Active	ROHS3 Compliant
DMN3016LSS-13	Diodes Incorporated	30	10.3	12	2.5	25.1 @ 10V	1.5	Active	ROHS3 Compliant
FDS6690A	onsemi	30	11	12.5	3	16 @ 5V	2.5	Active	ROHS3 Compliant
FDS8878	Fairchild Semiconductor	30	10.2	14	2.5	26 @ 10V	2.5	Active	Not specified
RS3E095BNGZETB	Rohm Semiconductor	30	9.5	14.6	2.5	8.3 @ 4.5V	2	Active	ROHS3 Compliant
RSS100N03TB	Rohm Semiconductor	30	10	13	2.5	14 @ 5V	2	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: FDS6690A (onsemi)

The FDS6690A provides the closest electrical match to the IRF7467. It maintains identical Vdss (30V) and Id (11A) ratings, matching the original part's continuous drain current specification. On-resistance of 12.5mOhm is within acceptable tolerance of the IRF7467's 12mOhm specification. The device is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability. Power dissipation rating of 2.5W matches the original specification exactly.

Secondary Recommendation: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 offers excellent electrical compatibility with Id of 10.3A and Rds On of 12mOhm at 10V, closely matching the IRF7467 performance envelope. This part is ROHS3 compliant with active status. Gate charge of 25.1nC provides efficient switching characteristics. The device is available in Tape & Reel packaging, supporting high-volume production requirements.

Alternative Option: RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB maintains 30V Vdss rating with 10A continuous drain current and 13mOhm on-resistance. ROHS3 compliance and active product status ensure regulatory alignment and procurement continuity. Lower gate charge (14nC @ 5V) and input capacitance (1070pF) reduce gate drive circuit complexity.

Selection Criteria Based on Application Requirements:

High current applications requiring exact 11A rating: Select FDS6690A
Applications prioritizing low on-resistance and gate charge: Select DMN3016LSS-13
Cost-optimized designs with 10A current tolerance: Select RSS100N03TB
Designs with thermal constraints: Verify power dissipation requirements; FDS6690A and IRF7467 both rated 2.5W

All recommended substitutes maintain 8-SOIC surface mount packaging, -55°C to 150°C operating temperature range, and ±12V to ±20V gate voltage ratings compatible with standard gate drive circuits.

Frequently Asked Questions (FAQ)

Q1: Can the IRF7467 be directly replaced with any of these substitute parts without PCB modification?

A: Yes, all listed substitute parts use identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging. Direct footprint compatibility is maintained. However, verify gate drive circuit voltage compatibility; some substitutes accept ±20V gate voltage versus the IRF7467's ±12V maximum.

Q2: Which substitute part most closely matches the IRF7467's electrical performance?

A: The FDS6690A provides the closest match, maintaining identical 30V Vdss and 11A Id ratings, plus matching 2.5W power dissipation. On-resistance of 12.5mOhm is within 4% of the IRF7467's 12mOhm specification.

Q3: Are all substitute parts RoHS compliant?

A: Five of the six substitute parts (DMG4710SSS-13, DMN3016LSS-13, FDS6690A, RS3E095BNGZETB, and RSS100N03TB) are ROHS3 compliant. The FDS8878 does not specify RoHS status. The original IRF7467 is RoHS non-compliant. Verify RoHS requirements for your application before selection.

Q4: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower Qg values (8.3nC for RS3E095BNGZETB) reduce gate drive circuit power consumption and enable faster switching. Higher Qg values (43nC for DMG4710SSS-13) require more gate drive current but may provide improved noise immunity. Select based on gate drive circuit capability and switching frequency requirements.

Q5: Can I use a substitute with lower continuous drain current rating (e.g., DMG4710SSS-13 at 8.8A) in an 11A application?

A: No. The IRF7467 is rated for 11A continuous drain current at 25°C. Substitutes with lower Id ratings (DMG4710SSS-13 at 8.8A, RS3E095BNGZETB at 9.5A) will exceed their thermal limits in 11A applications, causing device failure or reduced reliability. Select substitutes with Id ratings equal to or exceeding 11A for direct replacement.

Q6: What does "Active" product status mean versus "Obsolete"?

A: Active status indicates the manufacturer continues production and supports the part through normal distribution channels. Obsolete status (IRF7467) indicates the manufacturer has discontinued production; existing inventory may be limited. All recommended substitutes carry Active status, ensuring long-term procurement availability and manufacturer technical support.

Q7: How do input capacitance (Ciss) differences affect circuit design?

A: Input capacitance affects gate drive circuit design and switching speed. Lower Ciss values (680pF for RS3E095BNGZETB) reduce gate drive current requirements and enable faster switching transitions. Higher Ciss values (2530pF for IRF7467) require higher gate drive current but may reduce electromagnetic interference. Verify gate drive circuit can supply required current for selected substitute.

Q8: Are there thermal performance differences between substitutes?

A: Yes. Power dissipation ratings vary: FDS6690A and IRF7467 both rated 2.5W, while DMN3016LSS-13, RS3E095BNGZETB, and RSS100N03TB are rated 1.5W to 2W. Lower power dissipation indicates better thermal efficiency. In thermally constrained applications, select substitutes with lower power dissipation ratings. Verify thermal management design supports selected part's power dissipation.

Q9: What is the difference between Vgs(th) specifications across substitute parts?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the MOSFET on. Specifications range from 2V (IRF7467) to 3V (FDS6690A). All values fall within standard gate drive voltage ranges (±12V to ±20V). Verify gate drive circuit can reliably exceed the selected substitute's Vgs(th) specification for proper switching operation.

Q10: Which substitute offers the best long-term supply chain security?

A: FDS6690A (onsemi) and DMN3016LSS-13 (Diodes Incorporated) offer strong supply chain positions with high inventory levels (39,900 and 6,838 units respectively) and active product status. Both manufacturers maintain broad distribution networks and long-term product roadmaps, supporting sustained availability for production and field service applications.

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