IRF7466TRPBF N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7466TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SO packaging. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A (Ta)
On-Resistance (Rds On Max) @ 11A, 10V	12.5	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	3	V
Gate Charge (Qg Max) @ 4.5V	23	nC
Input Capacitance (Ciss Max) @ 15V	2100	pF
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7466TRPBF is determined by strict alignment with the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥11A at 25°C
On-Resistance (Rds On): Must not exceed 12.5mOhm at rated current and 10V gate drive
Gate Threshold Voltage (Vgs(th)): Must not exceed 3V at 250µA
Package: Must be 8-SOIC (0.154", 3.90mm Width) surface mount
Operating Temperature: Must support -55°C to 150°C range
Mounting Type: Surface mount only

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Lower values reduce gate drive requirements
Power Dissipation: Must support 2.5W thermal specification
Moisture Sensitivity: MSL 1 preferred for unlimited shelf life

All substitute parts listed below meet the primary substitution criteria. Variations in secondary parameters are noted to enable informed selection based on specific application requirements.

Parameter Comparison

Parameter	IRF7466TRPBF (Infineon)	FDS6690A (onsemi)	DMN3016LSS-13 (Diodes)	FDS8878 (Fairchild)	RSH100N03TB1 (Rohm)	RSS100N03TB (Rohm)	SQ4410EY-T1_GE3 (Vishay)
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	11	11	10.3	10.2	10	10	15
Rds On Max (mOhm)	12.5 @ 11A, 10V	12.5 @ 11A, 10V	12 @ 12A, 10V	14 @ 10.2A, 10V	13.3 @ 10A, 10V	13 @ 10A, 10V	12 @ 10A, 10V
Vgs(th) Max (V)	3 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	2.5 @ 250µA
Qg Max (nC)	23 @ 4.5V	16 @ 5V	25.1 @ 10V	26 @ 10V	20 @ 5V	14 @ 5V	53 @ 10V
Ciss Max (pF)	2100 @ 15V	1205 @ 15V	1415 @ 15V	897 @ 15V	1070 @ 15V	1070 @ 15V	2385 @ 25V
Power Dissipation Max (W)	2.5	2.5	1.5	2.5	2	2	5
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	Not specified	to 150	-55 to 175
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: FDS6690A (onsemi)

The FDS6690A provides direct electrical equivalence to the IRF7466TRPBF with identical Vdss (30V), Id (11A), and Rds On (12.5mOhm @ 11A, 10V) specifications. This part is currently in active production status with ROHS3 compliance and MSL 1 rating. The FDS6690A features lower gate charge (16nC vs. 23nC) and reduced input capacitance (1205pF vs. 2100pF), resulting in improved switching performance and reduced gate drive power requirements. Inventory availability is substantial at 39,900 pieces.

Secondary Recommendation: SQ4410EY-T1_GE3 (Vishay Siliconix)

The SQ4410EY-T1_GE3 exceeds the current rating requirement at 15A continuous drain current while maintaining 30V Vdss and 12mOhm on-resistance. This part is suitable for applications requiring higher current margin or thermal headroom. The extended operating temperature range to 175°C provides additional design flexibility. Higher gate charge (53nC) and input capacitance (2385pF) require consideration in gate drive circuit design. Active production status with ROHS3 compliance and 10,517 pieces in inventory.

Alternative Consideration: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 meets primary substitution criteria with 10.3A continuous current and 12mOhm on-resistance. This part is recommended only when the 11A current specification can be relaxed to 10.3A. Lower power dissipation rating (1.5W vs. 2.5W) may limit thermal margin in high-duty-cycle applications. Active production with ROHS3 compliance and 6,838 pieces available.

Not Recommended: FDS8878 and Rohm Parts (RSH100N03TB1, RSS100N03TB)

FDS8878 exhibits higher on-resistance (14mOhm) and lower current rating (10.2A), reducing electrical equivalence. Rohm devices (RSH100N03TB1, RSS100N03TB) are rated for 10A continuous current, below the 11A requirement, and feature incomplete operating temperature specifications. These parts should be considered only when current derating is acceptable.

Frequently Asked Questions (FAQ)

Q: Can FDS6690A directly replace IRF7466TRPBF without circuit modification?

A: Yes. The FDS6690A provides direct electrical equivalence with identical voltage, current, and on-resistance ratings. The 8-SOIC package pinout is compatible. Lower gate charge and input capacitance may improve switching performance without requiring circuit changes.

Q: What is the significance of the on-resistance (Rds On) specification in substitution?

A: On-resistance directly determines power dissipation and thermal performance. The IRF7466TRPBF specifies 12.5mOhm maximum at 11A and 10V gate drive. Substitute parts must not exceed this value to maintain equivalent thermal characteristics and prevent circuit performance degradation.

Q: Why does SQ4410EY-T1_GE3 have higher gate charge than the original part?

A: Gate charge (Qg) reflects the total charge required to switch the transistor. The SQ4410EY-T1_GE3 has higher gate charge (53nC vs. 23nC) due to its higher current rating (15A vs. 11A) and larger die size. Gate drive circuits must supply sufficient current to meet switching speed requirements. Verify gate driver capability before selection.

Q: Are all substitute parts RoHS3 compliant?

A: FDS6690A, DMN3016LSS-13, RSH100N03TB1, RSS100N03TB, and SQ4410EY-T1_GE3 are confirmed ROHS3 compliant. FDS8878 compliance status is not specified in available documentation. Verify RoHS compliance requirements for your application before final selection.

Q: What is the difference between Ta and Tc temperature ratings?

A: Ta indicates ambient temperature rating, while Tc indicates case temperature rating. The IRF7466TRPBF uses Ta rating (-55°C to 150°C). SQ4410EY-T1_GE3 uses Tc rating, which typically allows higher junction temperatures. Verify thermal management requirements for your specific application.

Q: Can I use a substitute part with lower current rating if my circuit only requires 10A?

A: Parts with lower current ratings (such as DMN3016LSS-13 at 10.3A or Rohm devices at 10A) may be used only if your application current requirement is confirmed below the substitute part's rating. Maintain minimum 20% design margin below the part's continuous current specification for reliability.

Q: What is MSL 1 and why does it matter?

A: MSL (Moisture Sensitivity Level) 1 indicates unlimited shelf life without moisture bake-out requirements. All listed substitute parts carry MSL 1 rating, ensuring compatibility with standard storage and handling procedures. This eliminates special moisture control requirements during inventory management.

Q: How do I verify package compatibility between substitute parts?

A: All substitute parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, which is mechanically and electrically compatible with the IRF7466TRPBF. Verify PCB footprint dimensions match 8-SOIC standard before assembly. Pin assignments are identical across all listed parts.

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