IRF7466 N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7466 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device features a 2.5W power dissipation rating and operates across the temperature range of -55°C to 150°C (TJ). The IRF7466 is packaged in an 8-SOIC surface mount configuration with 0.154" (3.90mm) width.

The IRF7466 is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

IRF7466
Infineon TechnologiesIn Stock: 18382IRF7466 Datasheet
IRF7466
Current Part
FDS6690A
onsemiIn Stock: 40000FDS6690A Datasheet
FDS6690A
Direct
DMN3016LSS-13
Diodes IncorporatedIn Stock: 6860DMN3016LSS-13 Datasheet
DMN3016LSS-13
MFR Recommended
DMS3015SSS-13
Diodes IncorporatedIn Stock: 28808DMS3015SSS-13 Datasheet
DMS3015SSS-13
MFR Recommended
FDS8878
Fairchild SemiconductorIn Stock: 32909FDS8878 Datasheet
FDS8878
MFR Recommended
RSS100N03TB
Rohm SemiconductorIn Stock: 15552RSS100N03TB Datasheet
RSS100N03TB
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 11 A
On-State Resistance (Rds On) @ 11A, 10V 12.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-SOIC Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7466 is determined by the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current (Id): 11A or greater at 25°C
  • On-State Resistance (Rds On): 12.5mOhm or lower at rated current and gate voltage
  • Package Type: 8-SOIC surface mount configuration
  • Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

  • Gate Threshold Voltage (Vgs(th)): 2.5V to 3V range
  • Maximum Gate Voltage (Vgs): ±20V or greater
  • Power Dissipation: 1.5W or greater

Substitute parts must satisfy all primary matching criteria to ensure functional equivalence in the application circuit. Variations in secondary parameters may be acceptable depending on circuit design margins and application requirements.

Parameter Comparison

Parameter IRF7466 (Main) FDS6690A DMN3016LSS-13 DMS3015SSS-13 FDS8878 RSS100N03TB
Manufacturer Infineon onsemi Diodes Inc. Diodes Inc. Fairchild Rohm
Vdss (V) 30 30 30 30 30 30
Id @ 25°C (A) 11 11 10.3 11 10.2 10
Rds On @ Rated Current, 10V (mOhm) 12.5 12.5 12 11.9 14 13
Vgs(th) @ 250µA (V) 3 3 2.5 2.5 2.5 2.5
Power Dissipation (W) 2.5 2.5 1.5 1.55 2.5 2
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Product Status Obsolete Active Active Active Active Active
RoHS Compliance Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant Not specified ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: FDS6690A (onsemi)

The FDS6690A provides direct electrical equivalence to the IRF7466 with identical Vdss (30V), Id (11A), and Rds On (12.5mOhm) specifications. This part is manufactured by onsemi under the PowerTrench® series and maintains active product status with ROHS3 compliance. The FDS6690A is available in high inventory (39,900 pcs) and is supplied in Cut Tape and Digi-Reel® packaging formats, supporting both prototype and production volume requirements.

Secondary Recommendation: DMS3015SSS-13 (Diodes Incorporated)

The DMS3015SSS-13 matches the IRF7466 in Vdss (30V) and Id (11A) ratings with marginally superior Rds On performance (11.9mOhm vs. 12.5mOhm). This part is manufactured by Diodes Incorporated and maintains active product status with ROHS3 compliance. The DMS3015SSS-13 includes an integrated Schottky diode body feature and is available in high inventory (28,700 pcs). Power dissipation is rated at 1.55W, which is lower than the IRF7466 specification and requires thermal design verification for high-power applications.

Tertiary Recommendation: FDS8878 (Fairchild Semiconductor)

The FDS8878 provides Vdss (30V) equivalence with slightly reduced Id rating (10.2A vs. 11A) and higher Rds On (14mOhm vs. 12.5mOhm). This part maintains 2.5W power dissipation matching the IRF7466 and is available in active product status with high inventory (32,800 pcs). The FDS8878 is suitable for applications where the 10.2A current rating provides adequate design margin.

Alternative Consideration: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 provides Vdss (30V) equivalence with reduced Id rating (10.3A vs. 11A) and improved Rds On (12mOhm). This part is available in active product status with ROHS3 compliance and moderate inventory (6,838 pcs). The lower power dissipation rating (1.5W) requires thermal analysis for applications approaching the 11A current specification.

Compliance Consideration: RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB provides Vdss (30V) equivalence with reduced Id rating (10A vs. 11A) and higher Rds On (13mOhm). This part is available in active product status with ROHS3 compliance and moderate inventory (15,465 pcs). The operating temperature specification lists only the maximum junction temperature (150°C) without explicit minimum temperature rating, requiring verification against application requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDS6690A directly replace the IRF7466 without circuit modifications?

A: Yes. The FDS6690A provides identical electrical specifications for Vdss (30V), Id (11A), and Rds On (12.5mOhm @ 11A, 10V). Both devices are packaged in 8-SOIC surface mount configuration with matching pinout. No circuit modifications are required for functional substitution.

Q: What is the primary reason to substitute the IRF7466?

A: The IRF7466 is classified as an obsolete product. Substitution is necessary to ensure continued supply chain availability and support for ongoing production. Active alternative parts provide equivalent electrical performance with improved compliance certifications and extended product lifecycle support.

Q: Are there differences in gate charge between the IRF7466 and substitute parts?

A: Yes. The IRF7466 specifies 23 nC gate charge at 4.5V. Substitute parts vary: FDS6690A (16 nC @ 5V), DMN3016LSS-13 (25.1 nC @ 10V), DMS3015SSS-13 (30.6 nC @ 10V), FDS8878 (26 nC @ 10V), and RSS100N03TB (14 nC @ 5V). Gate charge differences affect switching speed and driver circuit requirements. Circuit designers must verify gate driver capability for the selected substitute part.

Q: Which substitute part has the lowest on-state resistance?

A: The DMS3015SSS-13 provides the lowest Rds On specification at 11.9mOhm @ 11A, 10V, compared to the IRF7466 baseline of 12.5mOhm. This represents approximately 5% improvement in conduction loss characteristics.

Q: What is the significance of the Schottky diode feature in the DMS3015SSS-13?

A: The DMS3015SSS-13 includes an integrated Schottky diode body feature. This provides improved reverse recovery characteristics compared to standard body diodes, reducing switching losses and improving efficiency in applications with reverse current flow. This feature is not present in the IRF7466 or other listed substitutes.

Q: Are all substitute parts RoHS compliant?

A: The IRF7466 is RoHS non-compliant. Among substitute parts, FDS6690A, DMN3016LSS-13, DMS3015SSS-13, and RSS100N03TB are ROHS3 compliant. The FDS8878 compliance status is not specified in available documentation. For applications requiring RoHS compliance, FDS6690A, DMN3016LSS-13, DMS3015SSS-13, or RSS100N03TB are appropriate selections.

Q: What is the maximum gate voltage rating for each substitute part?

A: The IRF7466 specifies ±20V maximum gate voltage. FDS6690A and FDS8878 also specify ±20V. DMN3016LSS-13 and RSS100N03TB specify ±20V and 20V respectively. The DMS3015SSS-13 specifies ±12V maximum gate voltage, which is lower than the IRF7466. Circuit designs utilizing gate voltages above ±12V require alternative selections.

Q: How do input capacitance values compare across substitute parts?

A: Input capacitance (Ciss) varies significantly: IRF7466 (2100 pF @ 15V), FDS6690A (1205 pF @ 15V), DMN3016LSS-13 (1415 pF @ 15V), DMS3015SSS-13 (1276 pF @ 15V), FDS8878 (897 pF @ 15V), and RSS100N03TB (1070 pF @ 15V). Lower input capacitance reduces gate driver power requirements and improves switching speed. The FDS8878 provides the lowest input capacitance specification.

Q: Which substitute part offers the best inventory availability?

A: The FDS6690A offers the highest inventory availability with 39,900 pcs in stock, followed by FDS8878 (32,800 pcs) and DMS3015SSS-13 (28,700 pcs). For applications requiring immediate availability or high-volume production, FDS6690A is the optimal selection.

Q: Can substitute parts with lower current ratings (10A or 10.3A) be used in applications designed for 11A?

A: Substitution of lower-rated current parts requires thermal and electrical design margin analysis. Parts rated at 10A or 10.3A may be acceptable if the actual application current remains below the substitute part rating with adequate safety margin. Circuit designers must verify that peak and continuous current requirements do not exceed the substitute part specification under all operating conditions, including temperature extremes and component aging.

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