IRF7465PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7465PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 1.9A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SOIC surface mount configuration. The IRF7465PBF is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting the same mechanical and environmental specifications.

Substiute Parts

IRF7465PBF

Infineon TechnologiesIn Stock: 896IRF7465PBF Datasheet

Current PartRFQ

SI4464DY-T1-E3

Vishay SiliconixIn Stock: 3532SI4464DY-T1-E3 Datasheet

MFR RecommendedRFQ

SI4464DY-T1-GE3

Vishay SiliconixIn Stock: 1648SI4464DY-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7465PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following key parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel MOSFET (Metal Oxide technology)
• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 150V
• Continuous Drain Current (Id): Substitute must support the application current requirements
• On-State Resistance (Rds On): Substitute must not exceed the thermal and switching performance requirements of the original design
• Gate Threshold Voltage (Vgs(th)): Substitute must be compatible with the gate drive voltage
• Operating Temperature Range: Substitute must support -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: 8-SOIC (0.154", 3.90mm Width) required for PCB footprint compatibility
• Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Compliance Criteria:

• RoHS3 Compliance required
• ECCN and HTSUS classifications must align with export and tariff requirements

The substitute parts identified (SI4464DY-T1-E3 and SI4464DY-T1-GE3) meet these criteria with the following considerations: both are rated for 200V Vdss (exceeding the 150V requirement), support 1.7A continuous drain current, feature lower on-state resistance (240 mOhm @ 2.2A, 10V), and are packaged in the identical 8-SOIC form factor. Both substitutes are Active products with full RoHS3 compliance and MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

SI4464DY-T1-E3 (Cut Tape & Digi-Reel® Packaging)

This substitute is suitable for applications requiring the IRF7465PBF where component procurement from active inventory is necessary. The SI4464DY-T1-E3 is manufactured by Vishay Siliconix as part of the TrenchFET® series and maintains Active product status with 3500 pieces in stock. The device is rated for 200V Vdss, providing voltage margin above the original 150V specification. The 1.7A continuous drain current rating is compatible with applications designed for the 1.9A IRF7465PBF, provided thermal management and circuit design account for the lower power dissipation rating (1.5W versus 2.5W). The lower gate threshold voltage (4V versus 5.5V) and reduced on-state resistance (240 mOhm versus 280 mOhm) offer improved switching performance. The maximum gate voltage rating of ±20V is lower than the IRF7465PBF (±30V), requiring verification that gate drive circuits do not exceed this limit. RoHS3 compliance and MSL 1 rating ensure environmental and handling compatibility. Cut Tape & Digi-Reel® packaging is suitable for automated assembly processes.

SI4464DY-T1-GE3 (Tape & Reel Packaging)

This substitute is functionally identical to the SI4464DY-T1-E3 with the exception of packaging format. The SI4464DY-T1-GE3 is supplied in Tape & Reel (TR) configuration with 1607 pieces in stock. All electrical specifications, compliance certifications, and performance characteristics are equivalent to the SI4464DY-T1-E3. Selection between these two substitutes is determined by procurement requirements and assembly equipment compatibility. Both devices are Active products with ROHS3 compliance and REACH Unaffected or REACH info available upon request status.

Selection Criteria Summary:

Both SI4464DY-T1-E3 and SI4464DY-T1-GE3 substitutes are electrically and mechanically compatible with the IRF7465PBF for applications operating within the specified parameter ranges. The primary differentiator is packaging format. Circuit designs must account for the lower maximum gate voltage (±20V) and verify thermal performance with the reduced power dissipation rating (1.5W). The improved on-state resistance and lower gate threshold voltage of the substitute devices provide performance benefits in most switching applications.

Frequently Asked Questions (FAQ)

Q: Can the SI4464DY-T1-E3 or SI4464DY-T1-GE3 be used as direct replacements for the IRF7465PBF?

A: Both SI4464DY-T1-E3 and SI4464DY-T1-GE3 are electrically and mechanically compatible substitutes for the IRF7465PBF. The devices share identical 8-SOIC packaging, operating temperature range (-55°C to 150°C), and RoHS3 compliance. The substitute devices are rated for higher drain-to-source voltage (200V versus 150V), lower on-state resistance, and lower gate threshold voltage. Circuit designs must account for the lower maximum gate voltage rating (±20V versus ±30V) and the reduced power dissipation rating (1.5W versus 2.5W).

Q: What is the difference between SI4464DY-T1-E3 and SI4464DY-T1-GE3?

A: The SI4464DY-T1-E3 and SI4464DY-T1-GE3 are electrically identical N-Channel MOSFETs with the same electrical specifications and performance characteristics. The only difference is the packaging format: SI4464DY-T1-E3 is supplied in Cut Tape & Digi-Reel® packaging, while SI4464DY-T1-GE3 is supplied in Tape & Reel (TR) packaging. Selection between these two options depends on procurement requirements and assembly equipment compatibility.

Q: Are the substitute parts compatible with the same PCB footprint as the IRF7465PBF?

A: Yes. Both SI4464DY-T1-E3 and SI4464DY-T1-GE3 are packaged in 8-SOIC (0.154", 3.90mm Width), which is identical to the IRF7465PBF package. No PCB layout modifications are required for footprint compatibility.

Q: What are the key electrical differences between the IRF7465PBF and the substitute parts?

A: The primary electrical differences are: (1) Drain-to-Source Voltage: Substitutes are rated for 200V versus 150V for the original part; (2) On-State Resistance: Substitutes feature 240 mOhm @ 2.2A, 10V versus 280 mOhm @ 1.14A, 10V for the original; (3) Gate Threshold Voltage: Substitutes have 4V @ 250µA versus 5.5V @ 250µA for the original; (4) Maximum Gate Voltage: Substitutes are rated for ±20V versus ±30V for the original; (5) Power Dissipation: Substitutes are rated for 1.5W versus 2.5W for the original; (6) Gate Charge: Substitutes have 18 nC @ 10V versus 15 nC @ 10V for the original.

Q: Do the substitute parts meet RoHS and environmental compliance requirements?

A: Yes. Both SI4464DY-T1-E3 and SI4464DY-T1-GE3 are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). The SI4464DY-T1-E3 has REACH Unaffected status, while SI4464DY-T1-GE3 has REACH Unaffected status as well. Both devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications, matching the original IRF7465PBF.

Q: What is the impact of the lower maximum gate voltage (±20V) on circuit design?

A: The substitute parts are rated for ±20V maximum gate voltage, compared to ±30V for the IRF7465PBF. Gate drive circuits must be designed to ensure gate voltage does not exceed ±20V. If the original design applies gate voltages above ±20V, the substitute parts are not suitable without circuit modification. Most standard gate drive circuits operate within ±15V, making this difference non-critical for typical applications.

Q: How does the reduced power dissipation rating (1.5W versus 2.5W) affect thermal design?

A: The substitute parts have a lower maximum power dissipation rating (1.5W versus 2.5W). Thermal management calculations must be recalculated based on the lower rating. In applications where the IRF7465PBF was operating near its 2.5W limit, the substitute parts may require additional thermal management (increased heatsinking or reduced operating current) to maintain safe junction temperatures. The improved on-state resistance of the substitute devices typically results in lower power dissipation in switching applications, partially offsetting this difference.

Q: Are the substitute parts available in the same packaging options?

A: The SI4464DY-T1-E3 is available in Cut Tape & Digi-Reel® packaging, while SI4464DY-T1-GE3 is available in Tape & Reel (TR) packaging. Both are surface mount 8-SOIC packages. The original IRF7465PBF packaging format is not specified in the provided data. Selection between the two substitute options depends on procurement and assembly requirements.

Q: What is the product status of the substitute parts?

A: Both SI4464DY-T1-E3 and SI4464DY-T1-GE3 are Active products with full manufacturing support. The original IRF7465PBF is Discontinued at DiGi Electronics. The substitute parts have confirmed inventory availability (3500 pieces for SI4464DY-T1-E3 and 1607 pieces for SI4464DY-T1-GE3), ensuring long-term procurement viability.