IRF7465 Equivalent & Substitute Parts

Part Overview

The IRF7465 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 1.9A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7465 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement. Substitute parts must maintain compatibility with the original electrical specifications while accommodating available alternatives in the current market.

Key Parameters

Parameter	IRF7465
Manufacturer	Infineon Technologies
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)
Rds On (Max) @ Id, Vgs	280mOhm @ 1.14A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Product Status	Obsolete
RoHS Status	RoHS non-compliant

Substitute Part Grouping Explanation

Substitute parts for the IRF7465 are grouped based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 150V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature Range: Minimum -55°C to 150°C

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values preferred for reduced switching losses
Rds On: Lower on-resistance values indicate improved performance
Vgs(th): Gate threshold voltage compatibility with drive circuits
Power Dissipation: Thermal management capability

The substitute parts identified fall into two distinct categories:

Category 1: Direct Electrical Equivalents (SI4464DY-T1-E3, SI4464DY-T1-GE3) These Vishay Siliconix devices maintain the same N-Channel MOSFET topology with 150V+ voltage rating and comparable current handling. Both variants feature identical electrical specifications and differ only in packaging format (Cut Tape vs. Tape & Reel).

Category 2: Higher Current Capability Alternatives (RS6R035BHTB1, RS6R060BHTB1) These Rohm Semiconductor devices provide significantly higher continuous drain current ratings (35A and 60A respectively) while maintaining the 150V voltage specification. These parts are suitable for applications requiring higher current capacity than the original 1.9A specification.

Parameter Comparison

Parameter	IRF7465	SI4464DY-T1-E3	SI4464DY-T1-GE3	RS6R035BHTB1	RS6R060BHTB1
Manufacturer	Infineon Technologies	Vishay Siliconix	Vishay Siliconix	Rohm Semiconductor	Rohm Semiconductor
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	200 V	200 V	150 V	150 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)	1.7A (Ta)	1.7A (Ta)	35A (Tc)	60A (Tc)
Rds On (Max) @ Id, Vgs	280mOhm @ 1.14A, 10V	240mOhm @ 2.2A, 10V	240mOhm @ 2.2A, 10V	41mOhm @ 35A, 10V	21.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 1mA	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V	18 nC @ 10 V	18 nC @ 10 V	25 nC @ 10 V	46 nC @ 10 V
Vgs (Max)	±30V	±20V	±20V	±20V	±20V
Power Dissipation (Max)	2.5W (Ta)	1.5W (Ta)	1.5W (Ta)	3W (Ta), 73W (Tc)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-PowerTDFN	8-PowerTDFN
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	Not specified
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Pin-Compatible, Similar Current Rating):

The SI4464DY-T1-E3 and SI4464DY-T1-GE3 from Vishay Siliconix serve as direct electrical equivalents to the IRF7465. Both variants maintain identical electrical specifications with 1.7A continuous drain current, comparable gate charge characteristics, and identical 8-SOIC packaging. The primary distinction between these two parts is packaging format: SI4464DY-T1-E3 is supplied in Cut Tape format, while SI4464DY-T1-GE3 is supplied in Tape & Reel format. Both devices are currently in active production status and comply with ROHS3 standards, providing improved environmental compliance compared to the obsolete IRF7465. The higher Vdss rating (200V vs. 150V) of the SI4464 series provides additional voltage margin in applications operating near the 150V specification limit.

For Higher Current Applications:

The RS6R035BHTB1 and RS6R060BHTB1 from Rohm Semiconductor are suitable for applications requiring current capacity exceeding the original 1.9A specification. The RS6R035BHTB1 provides 35A continuous drain current, while the RS6R060BHTB1 delivers 60A continuous drain current. Both maintain the 150V Vdss specification and are housed in 8-PowerTDFN packages. These devices are currently in active production status. Selection between these two higher-current alternatives depends on specific application current requirements and thermal management capabilities. The RS6R060BHTB1 offers superior on-resistance characteristics (21.8mOhm vs. 41mOhm) but requires enhanced thermal dissipation due to higher gate charge and power dissipation ratings.

Compliance Considerations:

The IRF7465 is classified as RoHS non-compliant. The Vishay SI4464 series (both variants) provides ROHS3 compliance, making these parts suitable for applications subject to RoHS regulations. The Rohm RS6R series does not specify RoHS status in the provided data.

Frequently Asked Questions (FAQ)

Q: Can the SI4464DY-T1-E3 or SI4464DY-T1-GE3 be used as direct replacements for the IRF7465?

A: Yes, both SI4464 variants are electrically compatible with the IRF7465 for applications operating at or below 1.9A continuous drain current. Both devices maintain N-Channel MOSFET topology, 150V+ voltage rating, and identical 8-SOIC packaging. The primary difference between SI4464DY-T1-E3 and SI4464DY-T1-GE3 is packaging format (Cut Tape vs. Tape & Reel). The higher 200V Vdss rating of the SI4464 series provides additional voltage margin compared to the 150V specification of the IRF7465.

Q: What is the difference between the RS6R035BHTB1 and RS6R060BHTB1?

A: Both devices are N-Channel MOSFETs rated for 150V Vdss and are housed in 8-PowerTDFN packages. The RS6R035BHTB1 is rated for 35A continuous drain current with 41mOhm on-resistance, while the RS6R060BHTB1 is rated for 60A continuous drain current with 21.8mOhm on-resistance. Selection depends on application current requirements and thermal management capabilities. The RS6R060BHTB1 exhibits lower on-resistance but requires higher gate charge (46nC vs. 25nC) and dissipates significantly more power.

Q: Are the Rohm RS6R series parts suitable for applications designed for the IRF7465?

A: The Rohm RS6R series parts maintain the same 150V Vdss specification and N-Channel MOSFET topology as the IRF7465. However, these devices are housed in 8-PowerTDFN packages rather than the 8-SOIC package of the IRF7465, requiring PCB layout modifications. The significantly higher current ratings (35A and 60A) make these parts suitable for applications requiring current capacity beyond the original 1.9A specification. Applications operating at or below 1.9A should use the SI4464 series for direct package compatibility.

Q: What are the key electrical differences between the IRF7465 and its substitutes?

A: The IRF7465 features a gate threshold voltage of 5.5V at 250µA, while all substitute parts specify 4V at either 250µA or 1mA. The IRF7465 has a maximum gate charge of 15nC at 10V, compared to 18nC for the SI4464 series and 25-46nC for the Rohm RS6R series. The IRF7465 supports ±30V gate voltage, while all substitutes are rated for ±20V maximum gate voltage. These differences require verification of gate drive circuit compatibility in the target application.

Q: Does the higher Vdss rating of the SI4464 series affect circuit operation?

A: The SI4464 series is rated for 200V Vdss compared to the 150V specification of the IRF7465. This higher voltage rating does not negatively affect circuit operation in applications designed for 150V operation. The higher rating provides additional voltage margin and protection against transient overvoltage conditions. No circuit modifications are required when substituting the SI4464 series for the IRF7465 in 150V applications.

Q: What packaging considerations apply when selecting substitute parts?

A: The IRF7465 is housed in an 8-SOIC package. The SI4464 series (both variants) use identical 8-SOIC packaging, allowing direct PCB substitution without layout modifications. The Rohm RS6R series uses 8-PowerTDFN packaging, which differs from the original 8-SOIC package and requires PCB redesign. Verify PCB footprint compatibility before selecting the Rohm alternatives.

Q: Are there compliance or regulatory differences between the IRF7465 and substitute parts?

A: The IRF7465 is classified as RoHS non-compliant. The Vishay SI4464 series (both variants) comply with ROHS3 standards, providing improved environmental compliance. Applications subject to RoHS regulations should use the SI4464 series. The Rohm RS6R series does not specify RoHS compliance status in the provided technical data.

Q: What is the significance of the different temperature specifications between parts?

A: The IRF7465 and SI4464 series specify operating temperature ranges of -55°C to 150°C (TJ). The Rohm RS6R series specifies only a maximum junction temperature of 150°C without a minimum temperature specification. Applications requiring operation below 0°C should use the IRF7465 or SI4464 series. For standard industrial temperature ranges (0°C to 70°C ambient), all parts are suitable.

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