IRF7463TR N-Channel 30V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7463TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 14A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and belongs to the HEXFET® series. The IRF7463TR is classified as obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support, production continuity, and component sourcing.

Substitute parts listed in this reference maintain electrical compatibility within the specified parameter ranges while offering alternative sourcing options from active product lines or manufacturers with improved availability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ 14A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 4.5V	51	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts for the IRF7463TR are selected based on strict electrical and mechanical parameter compatibility. The following criteria determine substitution validity:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 14A at 25°C
On-State Resistance (Rds On): Must not exceed 8mOhm at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range (1.5V to 3V)
Package Type: 8-SOIC or equivalent surface mount 8-pin configuration
Operating Temperature: Must support -55°C to 150°C range
Mounting Type: Surface mount only

Substitution Logic: Parts meeting all primary criteria are classified as direct electrical equivalents. Variations in gate charge, input capacitance, or power dissipation do not disqualify a part if all primary parameters are satisfied. Parts with higher current ratings or lower on-state resistance provide enhanced performance margins. Parts with active product status offer superior long-term availability compared to obsolete devices.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ Id, 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ Vgs (nC)	Power Dissipation (W)	Package	Status
IRF7463TR	Infineon	30	14	8	2	51 @ 4.5V	2.5	8-SOIC	Obsolete
AO4492	Alpha & Omega	30	14	9.5	2.2	18 @ 10V	3.1	8-SOIC	Obsolete
FDS6670A	Fairchild	30	13	8	3	30 @ 5V	2.5	8-SOIC	Active
FDS8896	onsemi	30	15	6	2.5	67 @ 10V	2.5	8-SOIC	Active
RSS140N03TB	Rohm	30	14	6.7	2.5	37 @ 5V	2	8-SOIC	Active
SI4894BDY-T1-GE3	Vishay Siliconix	30	8.9	11	3	38 @ 10V	1.4	8-SOIC	Active

Engineering Selection Recommendations

Tier 1 - Preferred Substitutes (Active Status, Full Parameter Match):

FDS8896 (onsemi) and RSS140N03TB (Rohm) are the primary recommended substitutes. Both devices maintain 30V Vdss rating, meet or exceed 14A continuous drain current specification, and feature on-state resistance values at or below the IRF7463TR baseline. FDS8896 provides superior current handling at 15A with 6mOhm Rds On, while RSS140N03TB delivers lower power dissipation at 2W. Both are RoHS3 compliant and carry active product status, ensuring long-term availability and manufacturing support.

Tier 2 - Secondary Substitutes (Active Status, Minor Parameter Variations):

FDS6670A (Fairchild) operates at 30V with 13A continuous current and 8mOhm Rds On, matching the IRF7463TR electrical profile. This device is RoHS3 compliant and actively manufactured. The 1A reduction in continuous current rating requires verification in applications operating at maximum current limits.

Tier 3 - Limited Substitutes (Obsolete Status or Parameter Deviations):

AO4492 (Alpha & Omega) and SI4894BDY-T1-GE3 (Vishay Siliconix) are classified as secondary options. AO4492 is obsolete with 9.5mOhm Rds On, exceeding the IRF7463TR specification. SI4894BDY-T1-GE3 is active but rated for only 8.9A continuous current, below the 14A requirement, and features 11mOhm Rds On. These parts are suitable only for applications with reduced current demands or where performance margin is not critical.

Compliance Considerations:

The IRF7463TR is RoHS non-compliant. All recommended Tier 1 and Tier 2 substitutes are RoHS3 compliant, supporting modern manufacturing and environmental standards. All substitute parts maintain REACH unaffected status and EAR99 export classification consistent with the original device.

Frequently Asked Questions (FAQ)

Q: Can FDS8896 directly replace IRF7463TR in all applications?

A: FDS8896 meets all primary electrical parameters with enhanced performance. The 15A continuous current rating and 6mOhm Rds On provide improved current handling and reduced power dissipation compared to the IRF7463TR. Both devices use 8-SOIC packaging with identical pinout. Substitution is valid for all applications within the specified voltage and current ranges. Verify gate drive voltage compatibility (FDS8896 supports ±20V Vgs maximum versus IRF7463TR ±12V) if custom gate drive circuits are employed.

Q: What is the difference between RSS140N03TB and FDS8896?

A: Both devices maintain 30V Vdss and 14A minimum continuous current ratings. RSS140N03TB features lower power dissipation (2W versus 2.5W) and reduced on-state resistance (6.7mOhm versus 6mOhm). FDS8896 provides higher current capacity (15A versus 14A) and is manufactured by onsemi with established supply chain presence. Selection depends on thermal management requirements and supplier availability. Both are RoHS3 compliant and actively produced.

Q: Why is SI4894BDY-T1-GE3 listed as a substitute if it has lower current rating?

A: SI4894BDY-T1-GE3 is included for applications where continuous drain current does not reach 14A. This device is rated for 8.9A continuous current at 25°C, making it unsuitable for designs requiring the full 14A specification. However, it maintains 30V Vdss rating and 8-SOIC packaging. Use this part only in circuits with confirmed current requirements below 8.9A.

Q: Are there package compatibility concerns between IRF7463TR and substitute parts?

A: All listed substitutes use 8-SOIC (0.154", 3.90mm width) surface mount packaging, identical to the IRF7463TR. Pinout compatibility is maintained across all recommended parts. No PCB layout modifications are required for mechanical substitution. Verify gate drive signal levels and timing characteristics if switching frequency or gate current requirements differ significantly from the original design.

Q: What is the impact of RoHS compliance on substitution?

A: The IRF7463TR is RoHS non-compliant, while all recommended substitutes are RoHS3 compliant. This difference does not affect electrical performance or pin compatibility. RoHS3 compliance is required for new designs and manufacturing in regulated markets. Existing designs using IRF7463TR can transition to RoHS3 compliant substitutes without circuit modifications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) varies among substitutes: IRF7463TR 51nC @ 4.5V, FDS8896 67nC @ 10V, RSS140N03TB 37nC @ 5V. Higher gate charge requires longer switching times and increased gate drive current. If gate drive circuits operate at fixed current or voltage levels, switching frequency may be affected. Verify gate drive capability in high-frequency applications (>100kHz) before substitution. Lower gate charge (RSS140N03TB) enables faster switching with reduced drive power.

Q: Can obsolete substitute parts (AO4492) be used in new designs?

A: AO4492 is classified as obsolete and should not be selected for new designs. Obsolete parts face uncertain long-term availability, potential manufacturing discontinuation, and supply chain disruptions. Use only active-status substitutes (FDS8896, RSS140N03TB, FDS6670A) for new product development to ensure manufacturing continuity and component sourcing reliability.

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