IRF7463 Equivalent & Substitute Parts

Part Overview

The IRF7463 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 14A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is designed for general-purpose switching applications requiring moderate current handling in compact form factors.

The IRF7463 is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance of systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ 14A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 4.5V	51	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7463 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package/Case: Must be 8-SOIC (0.154", 3.90mm Width) or compatible surface mount 8-pin configuration
Mounting Type: Surface Mount required
Operating Temperature Range: Must support -55°C to 150°C minimum

Functional Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 14A at 25°C
On-State Resistance (Rds On): Substitute must not exceed 8mOhm at rated current and 10V gate drive
Power Dissipation: Substitute must support minimum 2.5W at Ta
Gate Threshold Voltage: Must be within acceptable switching range (typically 2V to 3V @ 250µA)

Acceptable Variation Ranges:

Gate Charge (Qg): Substitutes may vary; lower values indicate improved switching performance
Input Capacitance (Ciss): Substitutes may vary; lower values reduce gate drive requirements
Gate Voltage Rating (Vgs Max): Substitutes with higher ratings (±20V vs ±12V) are acceptable

All substitute parts listed meet these criteria and are confirmed as active or available products with current manufacturing status.

Parameter Comparison

Parameter	IRF7463	IRF8736TRPBF	FDS6670A	FDS8896	RSS140N03TB
Manufacturer	Infineon	Infineon	Fairchild	onsemi	Rohm
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	14	18	13	15	14
Rds On @ Id, 10V (mOhm)	8	4.8	8	6	6.7
Vgs(th) @ 250µA or 50µA (V)	2	2.35	3	2.5	2.5
Qg @ Vgs (nC)	51 @ 4.5V	26 @ 4.5V	30 @ 5V	67 @ 10V	37 @ 5V
Ciss @ 15V (pF)	3150	2315	2220	2525	3150
Vgs Max (V)	±12	±20	±20	±20	20
Power Dissipation (W)	2.5	2.5	2.5	2.5	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRF8736TRPBF

The IRF8736TRPBF is the manufacturer-recommended substitute from Infineon Technologies. This part maintains the same 30V Vdss rating and 8-SOIC package as the IRF7463. The IRF8736TRPBF offers superior electrical performance with 18A continuous drain current (exceeding the 14A requirement), lower on-state resistance (4.8mOhm vs 8mOhm), and reduced gate charge (26nC vs 51nC). The device is classified as Active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Inventory availability is substantial at 503,400 pieces.

Secondary Recommendation: FDS8896

The FDS8896 from onsemi is an active product offering 15A continuous drain current with 6mOhm on-state resistance, both exceeding IRF7463 specifications. This device maintains full 30V Vdss rating and 8-SOIC packaging. ROHS3 compliance and active product status support supply chain continuity. Gate charge is higher at 67nC, which may increase gate drive power requirements in high-frequency applications.

Tertiary Recommendation: FDS6670A

The FDS6670A from Fairchild Semiconductor provides 13A continuous drain current with 8mOhm on-state resistance, matching the IRF7463 electrical profile closely. The 30V Vdss and 8-SOIC package ensure mechanical and electrical compatibility. This device is active with 28,886 pieces in inventory. Gate threshold voltage is specified at 3V, which is within acceptable switching range but represents the upper limit of the group.

Alternative Recommendation: RSS140N03TB

The RSS140N03TB from Rohm Semiconductor matches the IRF7463 at 14A continuous drain current with improved 6.7mOhm on-state resistance. The 30V Vdss and 8-SOIC package provide full compatibility. ROHS3 compliance and active status support regulatory requirements. Power dissipation specification is 2W, which is lower than the 2.5W of other substitutes; verify thermal requirements in high-power applications.

Selection Criteria:

For improved performance and long-term supply assurance: Select IRF8736TRPBF
For closest electrical match with active status: Select FDS8896 or FDS6670A
For exact current rating match: Select RSS140N03TB or FDS6670A
For lowest on-state resistance: Select IRF8736TRPBF (4.8mOhm)
For lowest gate charge: Select IRF8736TRPBF (26nC)

All recommended substitutes are active products with ROHS3 compliance, ensuring regulatory alignment and supply chain availability superior to the obsolete IRF7463.

Frequently Asked Questions (FAQ)

Q1: Can the IRF8736TRPBF directly replace the IRF7463 without circuit modification?

A: Yes. The IRF8736TRPBF maintains identical 30V Vdss rating, 8-SOIC package, and surface mount configuration. The higher current rating (18A vs 14A) and lower on-state resistance (4.8mOhm vs 8mOhm) represent performance improvements that do not require circuit redesign. Gate charge reduction (26nC vs 51nC) may reduce gate drive power consumption. Verify gate drive voltage compatibility; IRF8736TRPBF accepts ±20V vs ±12V for IRF7463.

Q2: What is the primary difference between the substitute parts?

A: All substitutes maintain the 30V Vdss rating and 8-SOIC package. Primary differences are continuous drain current (13A to 18A), on-state resistance (4.8mOhm to 8mOhm), and gate charge (26nC to 67nC). These variations allow selection based on specific application requirements for current handling, power dissipation, and switching speed.

Q3: Are all substitute parts RoHS compliant?

A: IRF8736TRPBF, FDS8896, and RSS140N03TB are ROHS3 compliant. FDS6670A compliance status is not specified in available data. The IRF7463 is RoHS non-compliant. For applications requiring RoHS compliance, select from IRF8736TRPBF, FDS8896, or RSS140N03TB.

Q4: Which substitute offers the lowest on-state resistance?

A: The IRF8736TRPBF offers the lowest on-state resistance at 4.8mOhm (measured at 18A, 10V gate drive). This represents a 40% reduction compared to the IRF7463 at 8mOhm, resulting in lower power dissipation and reduced thermal load in switching applications.

Q5: Can substitutes be used in high-frequency switching applications?

A: Yes, with consideration of gate charge. The IRF8736TRPBF has the lowest gate charge at 26nC, making it optimal for high-frequency operation. The FDS8896 has higher gate charge at 67nC, which may increase gate drive power requirements at frequencies above 100kHz. Verify gate drive circuit capability for the selected substitute.

Q6: What is the impact of different gate threshold voltages?

A: Gate threshold voltages range from 2V (IRF7463) to 3V (FDS6670A). All values fall within acceptable switching ranges for standard gate drive circuits. Lower threshold voltages (2V to 2.5V) enable faster switching response; higher values (3V) provide slightly greater noise immunity. Selection depends on gate drive circuit design and application noise environment.

Q7: Are there inventory or lead-time considerations?

A: IRF8736TRPBF has the highest inventory at 503,400 pieces, ensuring immediate availability. FDS8896 has 45,355 pieces, FDS6670A has 28,886 pieces, and RSS140N03TB has 5,161 pieces. For critical applications requiring rapid procurement, IRF8736TRPBF is the preferred choice.

Q8: Can the RSS140N03TB be used if power dissipation is a concern?

A: The RSS140N03TB specifies 2W maximum power dissipation compared to 2.5W for other substitutes. However, this specification alone does not indicate superior thermal performance. Verify actual thermal resistance (θJA) in the device datasheet. The lower on-state resistance of other substitutes (4.8mOhm to 6.7mOhm) may result in lower actual power dissipation in typical applications.

Q9: What package compatibility should be verified?

A: All substitutes use 8-SOIC (0.154", 3.90mm Width) packaging, which is mechanically and electrically compatible with the IRF7463. Verify PCB footprint compatibility; 8-SOIC packages from different manufacturers maintain standardized pin spacing and dimensions. No PCB redesign is required for package substitution.

Q10: Which substitute is recommended for new designs?

A: The IRF8736TRPBF is recommended for new designs. It is the manufacturer-recommended substitute from Infineon Technologies, offers superior electrical performance, maintains active product status with ROHS3 compliance, and has the highest inventory availability. This selection ensures long-term supply chain support and regulatory alignment.

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