IRF7460PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7460PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 12A continuous drain current. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

IRF7460PBF

Infineon TechnologiesIn Stock: 13027IRF7460PBF Datasheet

Current PartRFQ

DMN2009LSS-13

Diodes IncorporatedIn Stock: 15325DMN2009LSS-13 Datasheet

MFR RecommendedRFQ

SI4116DY-T1-E3

Vishay SiliconixIn Stock: 30130SI4116DY-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7460PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Minimum 20V required
• Continuous Drain Current (Id): Minimum 12A at 25°C
• On-Resistance (Rds On): Maximum 10mOhm at rated current and gate voltage
• Package Type: 8-SOIC surface mount form factor
• Operating Temperature Range: -55°C to 150°C minimum

Acceptable Variation Parameters:

• Gate Threshold Voltage (Vgs(th)): Variation acceptable within device specifications
• Gate Charge (Qg): Variation acceptable with circuit design consideration
• Input Capacitance (Ciss): Variation acceptable within switching performance requirements
• Power Dissipation: Equal or greater rating acceptable

The substitute parts listed below meet or exceed the primary substitution criteria, ensuring functional compatibility in applications designed for the IRF7460PBF.

Parameter Comparison

Engineering Selection Recommendations

DMN2009LSS-13 (Diodes Incorporated): This substitute is an active product with ROHS3 compliance. It meets the primary substitution criteria with matching 20V Vdss and 12A continuous drain current ratings. The on-resistance of 8mOhm is superior to the original 10mOhm specification. The lower gate threshold voltage (1.2V vs. 3V) and higher gate charge (58.3nC vs. 19nC) require circuit evaluation for gate drive compatibility. The maximum Vgs rating of ±12V is lower than the original ±20V, which may restrict application in circuits with higher gate voltage swings. This part is suitable for direct replacement in standard applications with standard gate drive circuits.

SI4116DY-T1-E3 (Vishay Siliconix): This substitute is an active product with ROHS3 compliance, part of the TrenchFET® series. It exceeds the primary substitution criteria with 25V Vdss and 18A continuous drain current ratings, providing design margin. The on-resistance of 8.6mOhm is superior to the original specification. The lower gate threshold voltage (1.4V vs. 3V) and comparable gate charge (56nC vs. 19nC) require gate drive circuit evaluation. The maximum Vgs rating of ±12V is lower than the original ±20V. This part is suitable for applications requiring higher voltage and current ratings with enhanced thermal performance (5W at Tc).

Both substitute parts are active products with current manufacturing support and compliance certifications, addressing the obsolescence of the IRF7460PBF.

Frequently Asked Questions (FAQ)

Q: Can the DMN2009LSS-13 be used as a direct pin-for-pin replacement for the IRF7460PBF?

A: Yes, the DMN2009LSS-13 shares the same 8-SOIC package footprint and pinout. However, the lower gate threshold voltage (1.2V vs. 3V) and maximum Vgs rating (±12V vs. ±20V) require verification that the gate drive circuit is compatible with these specifications.

Q: What is the primary advantage of the SI4116DY-T1-E3 over the DMN2009LSS-13?

A: The SI4116DY-T1-E3 provides higher voltage (25V vs. 20V) and current (18A vs. 12A) ratings, offering greater design margin. It also provides higher power dissipation capability at case temperature (5W Tc vs. 2W Ta for DMN2009LSS-13).

Q: Are both substitute parts available in the same packaging options as the original IRF7460PBF?

A: Both substitute parts are available in 8-SOIC surface mount packages. The DMN2009LSS-13 is available in Cut Tape and Digi-Reel packaging. The SI4116DY-T1-E3 is available in Tape & Reel packaging. Verify packaging availability with your supplier for your specific procurement requirements.

Q: What is the impact of the lower gate threshold voltage in the substitute parts?

A: The lower gate threshold voltage (1.2V to 1.4V vs. 3V) means the substitute parts will begin conducting at lower gate voltages. This requires verification that the gate drive circuit provides sufficient voltage margin above the threshold to ensure proper on-state operation and that the circuit does not inadvertently turn on the device during low-voltage conditions.

Q: Are there compliance or regulatory differences between the original and substitute parts?

A: The original IRF7460PBF is classified as REACH Unaffected. Both substitute parts are ROHS3 Compliant and REACH Unaffected. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original part.

Q: Can the SI4116DY-T1-E3 be used in applications designed for 20V operation?

A: Yes, the SI4116DY-T1-E3 with 25V Vdss rating can be used in 20V applications. The higher voltage rating provides design margin and does not create compatibility issues in circuits operating at or below 20V.

Q: What should be verified before implementing a substitute part?

A: Verify gate drive circuit compatibility with the lower gate threshold voltage and maximum Vgs rating of the substitute part. Confirm that the on-resistance change (8mOhm to 8.6mOhm vs. 10mOhm) does not impact thermal performance or circuit efficiency. Validate that the higher gate charge does not exceed gate drive circuit current capabilities. Perform functional testing in the target application to confirm performance.