IRF7460 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7460 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SOIC packaging.

The IRF7460 has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	12	A
On-Resistance (Rds On) @ 12A, 10V	10	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7460 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
Continuous Drain Current (Id): Must equal or exceed 12A at 25°C
On-Resistance (Rds On): Must not exceed 10mOhm at specified conditions
Operating Temperature Range: Must support -55°C to 150°C
FET Type: N-Channel MOSFET technology

Mechanical Equivalence Criteria:

Package: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount

The substitute part DMN2009LSS-13 meets these criteria and is classified as an active product with improved electrical characteristics and enhanced compliance status.

Parameter Comparison

Parameter	IRF7460 (Infineon)	DMN2009LSS-13 (Diodes Inc.)	Unit
Manufacturer	Infineon Technologies	Diodes Incorporated	—
Product Status	Obsolete	Active	—
Drain-to-Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) @ 25°C	12	12	A
On-Resistance (Rds On) @ 12A, 10V	10	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	1.2	V
Power Dissipation (Max)	2.5	2	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	8-SOIC	8-SOIC	—
RoHS Status	Non-compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

Primary Substitute: DMN2009LSS-13

The DMN2009LSS-13 from Diodes Incorporated is the recommended substitute for the obsolete IRF7460. This selection is based on the following engineering factors:

Electrical Compatibility: The DMN2009LSS-13 meets or exceeds all critical electrical parameters. The on-resistance of 8mOhm is superior to the IRF7460's 10mOhm specification, resulting in lower power dissipation and improved thermal performance. Both devices support identical voltage and current ratings with matching operating temperature ranges.

Product Status: The DMN2009LSS-13 is an active product with confirmed inventory availability, ensuring long-term supply chain continuity compared to the obsolete IRF7460.

Compliance Status: The DMN2009LSS-13 is ROHS3 compliant, whereas the IRF7460 is non-compliant. This distinction is significant for applications subject to regulatory requirements or customer specifications mandating RoHS compliance.

Package Compatibility: Both devices utilize identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging, enabling direct board-level substitution without layout modifications.

Thermal Considerations: While the DMN2009LSS-13 has a lower maximum power dissipation rating (2W versus 2.5W), the superior on-resistance characteristic typically results in lower actual power dissipation during operation, offsetting this specification difference.

Frequently Asked Questions (FAQ)

Q: Can the DMN2009LSS-13 be used as a direct replacement for the IRF7460 without circuit modifications?

A: Yes. Both devices share identical voltage and current ratings, matching operating temperature ranges, and identical 8-SOIC packaging. No circuit modifications are required for substitution.

Q: What is the significance of the lower on-resistance in the DMN2009LSS-13?

A: Lower on-resistance (8mOhm versus 10mOhm) reduces resistive losses during conduction, resulting in lower power dissipation and improved efficiency. This is a beneficial characteristic for thermal management.

Q: Does the lower gate threshold voltage of the DMN2009LSS-13 affect circuit operation?

A: The gate threshold voltage difference (1.2V versus 3V) indicates the DMN2009LSS-13 requires less gate voltage to initiate conduction. This may improve switching characteristics in low-voltage gate drive applications but does not prevent substitution in circuits designed for the IRF7460.

Q: Is RoHS compliance a mandatory consideration for substitution?

A: RoHS compliance is mandatory only if your application, customer specification, or regulatory jurisdiction requires it. The DMN2009LSS-13's ROHS3 compliance provides an advantage for regulated markets.

Q: Are there any packaging or pinout differences between these devices?

A: No. Both devices use 8-SOIC (0.154", 3.90mm Width) surface mount packaging with identical pinout and footprint compatibility.

Q: What is the moisture sensitivity level for both devices?

A: Both the IRF7460 and DMN2009LSS-13 are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

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