IRF7459PBF Equivalent & Substitute Parts Reference

Part Overview

The IRF7459PBF, manufactured by Infineon Technologies, is an N-Channel MOSFET with a drain-to-source voltage rating of 20 V and a continuous drain current of 12A (Ta), offered in an 8-SO surface-mount package. This MOSFET, belonging to the HEXFET® series, is currently listed as obsolete. For designs requiring maintenance, replacement, or ongoing production support, it is necessary to identify alternative models with compatible electrical and mechanical parameters.

Substiute Parts

IRF7459PBF
Infineon TechnologiesIn Stock: 1182IRF7459PBF Datasheet
IRF7459PBF
Current Part
IRF8736PBF
Infineon TechnologiesIn Stock: 53344IRF8736PBF Datasheet
IRF8736PBF
MFR Recommended

Key Parameters

Parameter IRF7459PBF
Manufacturer Infineon Technologies
Category Transistors, FETs, MOSFETs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 10 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Inventory 1078 Pcs New Original In Stock
Series HEXFET®
Packaging Tube
Part Status Obsolete

Substitute Part Grouping Explanation

Substitute parts are grouped based on strict compliance with the following key parameters: FET type (N-Channel), package type (8-SO surface mount), power dissipation (2.5W (Ta)), mounting type, and relevant electrical ratings (Vdss, Id, Rds On, Vgs(th), Gate Charge, and Ciss). Only parts matching these criteria within the MOSFET product category are listed as substitutes.

Parameter Comparison

Parameter IRF7459PBF IRF8736PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 18A (Ta)
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V 4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 26 nC @ 4.5 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 10 V 2315 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095
Series HEXFET® HEXFET®
Part Status Obsolete Discontinued at Digi-Key

Engineering Selection Recommendations

Selection of substitute MOSFETs for IRF7459PBF is based exclusively on electrical and mechanical parameter alignment within the MOSFET product category, as well as the provided compliance information. All parameter matches are based on the explicit characteristics provided, including package type, mounting type, and performance ratings. Device selection also considers part status and regulatory compliance (REACH, ECCN, RoHS3 if provided).

Frequently Asked Questions (FAQ)

Q1: What are the critical electrical parameters for substituting IRF7459PBF?
A1: Key electrical parameters include FET type, drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), and maximum gate-source voltage (Vgs (Max)).

Q2: Can substitutes with higher Vdss or Id ratings be used?
A2: Substitutes with Vdss and Id ratings equal to or exceeding those specified for IRF7459PBF fall within the product category requirements for direct substitution.

Q3: Why is package compatibility essential in selection?
A3: Mechanical compatibility requires identical supplier device package (8-SO) and mounting type (surface mount) as defined in the key parameters.

Q4: Is regulatory compliance information relevant for substitute selection?
A4: Regulatory status (REACH Unaffected, ECCN, RoHS3) is directly referenced as part of the substitute evaluation criteria.

Q5: How is part status used in substitute selection?
A5: Only substitutes with clearly defined part status and compliance in the product category are considered, based on the provided data.

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