IRF7455PBF Equivalent & Substitute Parts Reference

Part Overview

The IRF7455PBF is an N-Channel MOSFET with a drain-to-source voltage of 30 V, a continuous drain current of 15A (Ta), and a maximum Rds(on) of 7.5mOhm at 15A, 10V. It is supplied in an 8-SO (SOIC 0.154", 3.90mm width) surface mount package. The device is compliant with ROHS3 and REACH and has a maximum power dissipation of 2.5W. The part is discontinued at Digi-Key, necessitating the identification of alternatives to ensure design continuity and component availability.

Key Parameters

Parameter	IRF7455PBF
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the IRF7455PBF is determined strictly by matching the electrical and mechanical parameters provided. The key parameters for substitutions in the MOSFET category are:

FET Type (N-Channel)
Technology (MOSFET, Metal Oxide)
Drain to Source Voltage (Vdss) (must be 30V)
Continuous Drain Current (Id) at 25°C
Drive Voltage and Rds(on) at specified current and voltage points
Vgs(th) (Max) and Input Capacitance (Ciss)
Power Dissipation (Max)
Package/Case and Mounting Type
Compliance (RoHS, REACH, MSL)
Operating Temperature Range

Only MOSFETs satisfying these parameters and available in compatible 8-SOIC (3.90 mm) surface mount packaging are included as substitutes.

Parameter Comparison

Parameter	IRF7455PBF	DMN3007LSS-13	FDS6670A	FDS8896
Manufacturer	Infineon Technologies	Diodes Incorporated	Fairchild Semiconductor	onsemi
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)	16A (Ta)	13A (Ta)	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 15A, 10V	7mOhm @ 15A, 10V	8mOhm @ 13A, 10V	6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	2.1V @ 250µA	3V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 5 V	64.2 nC @ 10 V	30 nC @ 5 V	67 nC @ 10 V
Vgs (Max)	±12V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 25 V	2714 pF @ 15 V	2220 pF @ 15 V	2525 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	8-SO	8-SOP	8-SOIC	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Not Specified	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	Not Specified	REACH Unaffected
Product/Part Status	Discontinued	Active	Active	Active

Engineering Selection Recommendations

For substitution of IRF7455PBF, only active parts with equivalent compliance (RoHS3, REACH, MSL 1 where available) and in the same 8-SOIC package should be selected. All substitute parts listed are active and meet the required compliance standards where specified in their documentation. Units without explicit RoHS, REACH, or MSL information should be evaluated strictly based on available data.

Frequently Asked Questions (FAQ)

Q1: What are the key electrical parameters for substituting IRF7455PBF?
A1: Key electrical parameters are FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id) at 25°C, Rds(on), Vgs(th), gate charge, input capacitance, and power dissipation.

Q2: Are all substitute parts in the same package size and mounting type?
A2: All listed substitute MOSFETs are in the 8-SOIC (0.154", 3.90mm width) surface mount package, matching the IRF7455PBF.

Q3: What compliance standards must be matched in substitution?
A3: Substitute MOSFETs must be ROHS3 compliant, REACH unaffected, and have equivalent MSL status, where information is provided.

Q4: Can a substitute with higher or lower Id or Rds(on) be used?
A4: Only parts within the provided parameter values for continuous drain current and Rds(on) are listed; values are compared directly and must not be inferred or extrapolated.

Q5: Why is finding an alternative needed for IRF7455PBF?
A5: IRF7455PBF is discontinued at Digi-Key; sourcing suitable alternatives ensures continued design and manufacturing.

Q6: Do all substitutes listed include detailed part status?
A6: All substitutes have explicit product status information: active or discontinued. Only active substitutes are included.

Q7: Is there any difference between SOP and SOIC for these substitutes?
A7: All substitute parts are provided in the 8-SOIC (0.154", 3.90mm width) package, directly matching the IRF7455PBF.

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