IRF7452 Equivalent & Substitute Parts

Part Overview

The IRF7452 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 4.5A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The IRF7452 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7452

Infineon TechnologiesIn Stock: 9114IRF7452 Datasheet

Current PartRFQ

FDS3692

onsemiIn Stock: 15959FDS3692 Datasheet

MFR RecommendedRFQ

STS5N15F4

STMicroelectronicsIn Stock: 3471STS5N15F4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7452 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel (mandatory match)
• Drain to Source Voltage (Vdss): Minimum 100V (equal or higher acceptable)
• Continuous Drain Current (Id): Minimum 4.5A (equal or higher acceptable)
• Package / Case: 8-SOIC surface mount (physical and electrical compatibility)
• Operating Temperature Range: -55°C to 150°C (minimum requirement)
• Power Dissipation: 2.5W or greater

Secondary Compatibility Parameters:

• Rds On (Max): 60 mOhm or lower (lower values indicate improved performance)
• Gate Charge (Qg): Lower values preferred for reduced switching losses
• Vgs(th): Threshold voltage compatibility for gate drive circuits
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred for manufacturing reliability

Two substitute parts meet these criteria with documented electrical and mechanical compatibility to the IRF7452.

Parameter Comparison

Engineering Selection Recommendations

FDS3692 (onsemi) is the primary substitute for the IRF7452. This part provides exact electrical equivalence across all critical parameters: 100V Vdss, 4.5A continuous drain current, 60 mOhm Rds On, and identical 8-SOIC packaging. The FDS3692 is in active production status, ensuring long-term supply availability. The part is ROHS3 compliant, meeting modern environmental and regulatory requirements. Gate charge is significantly lower (15 nC vs. 50 nC), resulting in reduced switching losses and improved efficiency in gate-driven applications. This part is recommended as the direct replacement for new designs and production transitions.

STS5N15F4 (STMicroelectronics) is a secondary substitute suitable for applications where higher voltage rating provides design margin. This part exceeds the IRF7452 specification with 150V Vdss and 5A continuous drain current, while maintaining identical 8-SOIC packaging and 2.5W power dissipation. The STS5N15F4 is in active production and ROHS3 compliant. Rds On is marginally higher (63 mOhm vs. 60 mOhm), and gate charge is comparable (48 nC vs. 50 nC). This substitute is appropriate for designs requiring enhanced voltage headroom or where higher current capability provides operational flexibility.

Both substitutes maintain full compatibility with the IRF7452 in terms of package footprint, thermal characteristics, and operating temperature range. Selection between FDS3692 and STS5N15F4 depends on application-specific voltage and current requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDS3692 be used as a direct replacement for the IRF7452 without circuit modification?

A: Yes. The FDS3692 matches the IRF7452 across all critical electrical parameters: 100V Vdss, 4.5A Id, 60 mOhm Rds On, and 8-SOIC package. Gate charge is lower (15 nC vs. 50 nC), which may improve switching performance but does not require circuit changes. Pin configuration and thermal characteristics are identical.

Q: What is the advantage of using STS5N15F4 over FDS3692?

A: The STS5N15F4 provides higher voltage rating (150V vs. 100V) and slightly higher current capability (5A vs. 4.5A). This part is suitable for applications requiring additional voltage margin or where higher current headroom is beneficial. Both parts are electrically compatible with the IRF7452 in standard switching applications.

Q: Are both substitute parts available in the same packaging as the IRF7452?

A: Yes. Both FDS3692 and STS5N15F4 are supplied in 8-SOIC (0.154", 3.90mm Width) surface mount packaging, identical to the IRF7452. PCB footprints are directly compatible without layout modification.

Q: What is the difference in gate charge between these parts, and does it matter?

A: The FDS3692 has significantly lower gate charge (15 nC) compared to the IRF7452 (50 nC) and STS5N15F4 (48 nC). Lower gate charge reduces switching losses and allows faster switching transitions with lower gate drive current requirements. This improves efficiency in high-frequency applications but does not affect DC operation or require circuit redesign.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both FDS3692 and STS5N15F4 are ROHS3 compliant. The original IRF7452 is RoHS non-compliant. Substitution with either active-production part ensures compliance with modern environmental regulations.

Q: What is the moisture sensitivity level (MSL) of the substitute parts?

A: Both FDS3692 and STS5N15F4 have MSL 1 (Unlimited), identical to the IRF7452. This indicates no moisture sensitivity and no special storage or handling requirements during manufacturing.

Q: Can I use STS5N15F4 in a circuit designed for the IRF7452 without any changes?

A: Yes. The STS5N15F4 is electrically and mechanically compatible with the IRF7452. The higher voltage rating (150V vs. 100V) and current capability (5A vs. 4.5A) do not require circuit modification and provide additional design margin. Pin configuration and package dimensions are identical.