IRF7451TR N-Channel MOSFET 150V 3.6A Equivalent & Substitute Parts

Part Overview

The IRF7451TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 3.6A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SOIC surface mount configuration. The IRF7451TR is currently classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain electrical performance within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Ta)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	90	mOhm @ 2.2A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41	nC @ 10V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC	Surface Mount
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	990	pF @ 25V

Substitute Part Grouping Explanation

Substitute parts for the IRF7451TR are identified based on strict electrical and mechanical parameter compatibility. The substitution logic is based on the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 150V
Continuous Drain Current (Id) must meet or exceed 3.6A at rated conditions
Drive Voltage and Rds On characteristics must support equivalent switching performance
Gate Threshold Voltage (Vgs(th)) must fall within acceptable operating ranges
Power Dissipation capability must support 2.5W (Ta) or equivalent thermal rating
Operating temperature range must encompass -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Package type must be 8-SOIC (0.154", 3.90mm Width) for direct PCB compatibility
Surface mount configuration required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) acceptable

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (enhanced or equivalent performance with different electrical characteristics).

Parameter Comparison

Parameter	IRF7451TR (Main)	IRF7451TRPBF (Parametric Equivalent)	STS5N15F4 (MFR Recommended)
Manufacturer	Infineon Technologies	Infineon Technologies	STMicroelectronics
Drain to Source Voltage (Vdss)	150V	150V	150V
Continuous Drain Current (Id) @ 25°C	3.6A (Ta)	3.6A (Ta)	5A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 2.2A, 10V	90mOhm @ 2.2A, 10V	63mOhm @ 2.5A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5.5V @ 250µA	5.5V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V	41nC @ 10V	48nC @ 10V
Vgs (Max)	±30V	±30V	±20V
Input Capacitance (Ciss) (Max) @ Vds	990pF @ 25V	990pF @ 25V	2710pF @ 25V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)	2.5W (Tc)
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Package Type	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
Packaging Option	-	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

IRF7451TRPBF (Infineon Technologies) - Parametric Equivalent:

The IRF7451TRPBF is the direct parametric equivalent of the IRF7451TR, manufactured by Infineon Technologies. This part maintains identical electrical specifications across all critical parameters including Vdss (150V), Id (3.6A at Ta), Rds On (90mOhm @ 2.2A, 10V), and gate charge (41nC @ 10V). The primary distinction is product status: IRF7451TRPBF is currently in active production with ROHS3 compliance certification, whereas the IRF7451TR is obsolete and RoHS non-compliant. The IRF7451TRPBF is available in Cut Tape and Digi-Reel® packaging formats with significantly higher inventory availability (51,373 pcs). This part is the preferred direct replacement for new designs and existing applications requiring component refresh.

STS5N15F4 (STMicroelectronics) - Manufacturer-Recommended Alternative:

The STS5N15F4 is a manufacturer-recommended substitute manufactured by STMicroelectronics, part of the DeepGATE™ and STripFET™ series. This device exceeds the electrical performance of the IRF7451TR in several parameters: continuous drain current is rated at 5A (Tc) compared to 3.6A (Ta), and on-resistance is reduced to 63mOhm @ 2.5A, 10V versus 90mOhm. Both devices maintain the same 150V Vdss rating and 2.5W power dissipation capability. The STS5N15F4 features lower gate threshold voltage (4V versus 5.5V) and higher input capacitance (2710pF versus 990pF). This part is suitable for applications requiring enhanced current handling or improved thermal performance. The STS5N15F4 is ROHS3 compliant and available in active production status with 3,415 pcs in inventory.

Selection Basis:

For direct replacement with identical specifications: Select IRF7451TRPBF
For enhanced performance with higher current rating: Select STS5N15F4
For RoHS compliance requirements: Both IRF7451TRPBF and STS5N15F4 meet ROHS3 standards
For procurement continuity: IRF7451TRPBF offers superior inventory availability

All substitute parts maintain 8-SOIC package compatibility, surface mount configuration, and operating temperature range of -55°C to 150°C (TJ).

Frequently Asked Questions (FAQ)

Q: Can IRF7451TRPBF be used as a direct replacement for IRF7451TR?

A: Yes. The IRF7451TRPBF is a parametric equivalent with identical electrical specifications. Both devices share the same Vdss (150V), Id (3.6A at Ta), Rds On (90mOhm @ 2.2A, 10V), gate charge (41nC @ 10V), and operating temperature range (-55°C to 150°C TJ). The primary difference is product status: IRF7451TRPBF is active production with ROHS3 compliance, while IRF7451TR is obsolete and RoHS non-compliant. Direct PCB substitution is supported without circuit modification.

Q: What are the key differences between IRF7451TRPBF and STS5N15F4?

A: Both devices maintain 150V Vdss and 2.5W power dissipation ratings. The STS5N15F4 offers higher continuous drain current (5A at Tc versus 3.6A at Ta) and lower on-resistance (63mOhm @ 2.5A, 10V versus 90mOhm @ 2.2A, 10V). The STS5N15F4 has lower gate threshold voltage (4V versus 5.5V) and higher input capacitance (2710pF versus 990pF). Both are ROHS3 compliant and packaged in 8-SOIC. Selection depends on whether enhanced current handling or identical electrical characteristics are required.

Q: Are all substitute parts compatible with the same PCB layout?

A: Yes. All substitute parts (IRF7451TRPBF and STS5N15F4) are packaged in 8-SOIC (0.154", 3.90mm Width) surface mount configuration. Pin-to-pin compatibility is maintained, allowing direct PCB substitution without layout modification. Verify gate drive voltage compatibility with your circuit design, particularly for STS5N15F4 which has a lower gate threshold voltage (4V versus 5.5V).

Q: What is the significance of the product status difference between IRF7451TR and its substitutes?

A: The IRF7451TR is classified as obsolete, indicating Infineon Technologies has discontinued production. The IRF7451TRPBF and STS5N15F4 are both in active production status, ensuring long-term availability and supply chain continuity. For new designs and component refresh cycles, active production parts are recommended to avoid future obsolescence issues.

Q: Does the RoHS compliance status affect electrical performance?

A: No. RoHS compliance status reflects manufacturing process and material composition standards, not electrical performance. Both IRF7451TRPBF and STS5N15F4 are ROHS3 compliant, meeting environmental and regulatory requirements. The IRF7451TR is RoHS non-compliant, which may restrict use in certain applications or regions with RoHS mandates.

Q: Can STS5N15F4 be used in applications designed for IRF7451TR without circuit modification?

A: STS5N15F4 can be used as a substitute with consideration of parameter differences. The lower gate threshold voltage (4V versus 5.5V) and higher input capacitance (2710pF versus 990pF) may affect gate drive timing and switching characteristics. Verify that your gate drive circuit can accommodate the lower threshold voltage and higher capacitive load. The enhanced current rating (5A versus 3.6A) and lower on-resistance provide improved performance margins.

Q: What packaging options are available for substitute parts?

A: IRF7451TRPBF is available in Cut Tape (CT) and Digi-Reel® packaging formats. STS5N15F4 is also available in Cut Tape (CT) and Digi-Reel® packaging formats. Both packaging options support automated assembly processes and are suitable for high-volume production environments.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. IRF7451TR and IRF7451TRPBF both specify 41nC @ 10V, while STS5N15F4 specifies 48nC @ 10V. Higher gate charge requires greater gate drive current or longer switching time. For most applications, this 7nC difference is negligible. Verify gate drive circuit capability if operating at high switching frequencies or with marginal gate drive current.

Q: Are there thermal performance differences between substitute parts?

A: Both IRF7451TRPBF and STS5N15F4 are rated for 2.5W power dissipation. IRF7451TRPBF uses Ta (ambient temperature) reference, while STS5N15F4 uses Tc (case temperature) reference. The STS5N15F4 offers lower on-resistance (63mOhm versus 90mOhm), which reduces conduction losses and improves thermal performance in high-current applications. Both devices support the same operating temperature range (-55°C to 150°C TJ).

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