IRF7451 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7451 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and features a maximum on-resistance of 90mOhm at 2.2A and 10V gate-source voltage.

The IRF7451 is classified as obsolete, which necessitates identification of equivalent and substitute components for new designs and ongoing production requirements. Active alternatives with matching or enhanced electrical characteristics are available from Infineon Technologies, STMicroelectronics, and Rohm Semiconductor.

Substiute Parts

IRF7451

Infineon TechnologiesIn Stock: 2182IRF7451 Datasheet

Current PartRFQ

IRF7451TRPBF

Infineon TechnologiesIn Stock: 51404IRF7451TRPBF Datasheet

DirectRFQ

RS6R035BHTB1

Rohm SemiconductorIn Stock: 3490RS6R035BHTB1 Datasheet

MFR RecommendedRFQ

RS6R060BHTB1

Rohm SemiconductorIn Stock: 5865RS6R060BHTB1 Datasheet

MFR RecommendedRFQ

STS5N15F4

STMicroelectronicsIn Stock: 3471STS5N15F4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7451 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
• FET Type: N-Channel only
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• Operating Temperature Range: Must support -55°C to 150°C (TJ) or equivalent maximum

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 3.6A at rated temperature
• On-Resistance (Rds On): Lower or equal values indicate improved performance
• Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with existing drive circuitry
• Maximum Gate-Source Voltage (Vgs): Must accommodate ±30V or greater
• Package footprint compatibility: 8-SOIC or equivalent pinout

Substitute parts are classified into two categories:

1. Direct Equivalents: Identical electrical specifications and package type (IRF7451TRPBF)
2. Functional Alternatives: Enhanced current ratings or improved on-resistance with compatible package families (STS5N15F4, RS6R035BHTB1, RS6R060BHTB1)

Parameter Comparison

Engineering Selection Recommendations

IRF7451TRPBF (Infineon Technologies)

The IRF7451TRPBF is the direct active equivalent of the obsolete IRF7451. This part maintains identical electrical specifications including 150V Vdss, 3.6A continuous drain current, 90mOhm on-resistance, and 8-SOIC package footprint. The IRF7451TRPBF is classified as active with ROHS3 compliance, making it the primary replacement for existing IRF7451 designs. Packaging is available in Cut Tape and Digi-Reel formats with 51,373 units in stock.

STS5N15F4 (STMicroelectronics)

The STS5N15F4 is an active N-Channel MOSFET rated for 150V Vdss with 5A continuous drain current, exceeding the IRF7451 current rating by 1.4A. On-resistance is reduced to 63mOhm at 2.5A and 10V, providing improved efficiency. The device maintains the 8-SOIC package footprint and -55°C to 150°C operating temperature range. ROHS3 compliance and 3,415 units in stock support production continuity. Gate-source threshold voltage is reduced to 4V, requiring verification of drive circuit compatibility.

RS6R035BHTB1 (Rohm Semiconductor)

The RS6R035BHTB1 is an active N-Channel MOSFET rated for 150V Vdss with 35A continuous drain current at Tc. On-resistance is significantly reduced to 41mOhm at 35A and 10V. The device uses an 8-HSOP package (8-PowerTDFN), which differs from the 8-SOIC footprint of the IRF7451. Maximum gate-source voltage is reduced to ±20V. This part is suitable for applications requiring higher current capacity with improved thermal performance. 3,382 units are in stock.

RS6R060BHTB1 (Rohm Semiconductor)

The RS6R060BHTB1 is an active N-Channel MOSFET rated for 150V Vdss with 60A continuous drain current at Tc. On-resistance is further reduced to 21.8mOhm at 60A and 10V, providing maximum efficiency for high-current applications. The device uses an 8-HSOP package (8-PowerTDFN), differing from the 8-SOIC footprint. Maximum gate-source voltage is ±20V. Power dissipation capability reaches 104W at Tc. This part is suitable for applications requiring maximum current handling and thermal performance. 5,778 units are in stock.

Frequently Asked Questions (FAQ)

Q: Can the IRF7451TRPBF be used as a direct replacement for the IRF7451?

A: Yes. The IRF7451TRPBF is the active equivalent of the obsolete IRF7451, with identical electrical specifications and 8-SOIC package footprint. No circuit modifications are required. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q: What is the difference between the Infineon IRF7451TRPBF and the STMicroelectronics STS5N15F4?

A: Both devices are rated for 150V Vdss and use the 8-SOIC package. The STS5N15F4 offers higher continuous drain current (5A vs. 3.6A) and lower on-resistance (63mOhm vs. 90mOhm). However, the STS5N15F4 has a lower gate-source threshold voltage (4V vs. 5.5V) and higher input capacitance (2710pF vs. 990pF), which may affect drive circuit performance. Both are ROHS3 compliant and active products.

Q: Can the Rohm RS6R035BHTB1 or RS6R060BHTB1 be used as direct replacements?

A: These Rohm devices are functionally compatible but use an 8-HSOP package (8-PowerTDFN) instead of the 8-SOIC package of the IRF7451. PCB layout modifications are required. Both offer significantly higher current ratings (35A and 60A respectively) and lower on-resistance values. Maximum gate-source voltage is reduced to ±20V. These parts are suitable for applications requiring enhanced current handling and thermal performance.

Q: What are the key parameters that determine substitution compatibility?

A: The critical parameters are drain-to-source voltage (Vdss), FET type (N-Channel), technology (MOSFET), continuous drain current (Id), on-resistance (Rds On), gate-source threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs), and operating temperature range. Package footprint compatibility must also be verified for PCB integration.

Q: Are there any compliance differences between the substitute parts?

A: The IRF7451TRPBF and STS5N15F4 are both ROHS3 compliant. The original IRF7451 is RoHS non-compliant. The Rohm parts (RS6R035BHTB1 and RS6R060BHTB1) do not specify RoHS status in the provided data. All parts are EAR99 classified and REACH unaffected.

Q: What is the impact of different gate-source threshold voltages on circuit design?

A: The IRF7451 has a Vgs(th) of 5.5V at 250µA, while the STS5N15F4 and Rohm parts have 4V at 250µA or 1mA. Lower threshold voltages allow operation with lower gate drive voltages but may increase susceptibility to parasitic turn-on. Drive circuit compatibility must be verified before substitution.

Q: How do input capacitance differences affect switching performance?

A: The IRF7451 has 990pF input capacitance at 25V. The STS5N15F4 has 2710pF at 25V, and the Rohm parts have 1470pF and 2750pF at 75V. Higher input capacitance increases gate charge requirements and switching losses. Drive circuit current capability must be verified to ensure adequate switching speed.

Q: What packaging considerations apply to the Rohm substitutes?

A: The RS6R035BHTB1 and RS6R060BHTB1 use 8-HSOP (8-PowerTDFN) packages, which differ from the 8-SOIC package of the IRF7451. PCB footprint, thermal management, and component placement must be re-evaluated. The 8-HSOP package typically offers improved thermal performance through enhanced substrate contact.