IRF7450TRPBF N-Channel MOSFET 200V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF7450TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 2.5A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The product status is listed as Obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications while accommodating the same or compatible package footprints.

Substiute Parts

IRF7450TRPBF

Infineon TechnologiesIn Stock: 21523IRF7450TRPBF Datasheet

Current PartRFQ

FDS2670

onsemiIn Stock: 17574FDS2670 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7450TRPBF are identified based on strict electrical and mechanical parameter compatibility. The substitution logic is based on the following criteria:

Voltage Rating Compatibility: Substitute parts must maintain the 200V Vdss rating to ensure safe operation in circuits designed for this voltage class.

Current Capacity: Substitute parts must support continuous drain current at or above 2.5A at 25°C to handle the same load conditions.

On-Resistance Characteristics: Rds On values must be equal to or lower than the original specification to maintain or improve switching efficiency and thermal performance.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with comparable or lower values ensure compatible gate drive circuit operation.

Package Footprint: The 8-SOIC package with 0.154" (3.90mm) width must be maintained for direct PCB compatibility.

Operating Temperature Range: The -55°C to 150°C junction temperature range must be supported.

Compliance and Status: Active product status and RoHS3 compliance are preferred for long-term availability and regulatory adherence.

Parameter Comparison

Engineering Selection Recommendations

The FDS2670 from onsemi is a direct functional substitute for the IRF7450TRPBF. Selection of this substitute is supported by the following engineering factors:

Voltage and Current Ratings: Both devices are rated for 200V Vdss. The FDS2670 provides 3A continuous drain current, which exceeds the 2.5A requirement of the original part, ensuring adequate current handling capacity.

On-Resistance Performance: The FDS2670 exhibits lower on-resistance (130 mOhm @ 3A, 10V) compared to the IRF7450TRPBF (170 mOhm @ 1.5A, 10V), resulting in reduced conduction losses and improved thermal efficiency.

Package Compatibility: Both devices use the 8-SOIC package with identical footprint dimensions (0.154", 3.90mm width), enabling direct PCB layout compatibility without redesign.

Thermal and Operating Range: Identical operating temperature range (-55°C to 150°C junction temperature) and power dissipation rating (2.5W) ensure thermal design compatibility.

Regulatory Compliance: Both parts are RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited moisture sensitivity), meeting current regulatory requirements.

Product Status: The FDS2670 is in active production status, ensuring long-term availability and supply chain continuity, addressing the obsolescence of the original IRF7450TRPBF.

Gate Drive Considerations: The FDS2670 has a lower gate threshold voltage (4.5V vs. 5.5V), which may require verification that existing gate drive circuits can reliably turn on the device. Gate charge is slightly higher (43 nC vs. 39 nC), which has minimal impact on switching speed in typical applications.

Gate Voltage Absolute Maximum: The FDS2670 has a lower absolute maximum gate voltage (±20V vs. ±30V). Circuits applying gate voltages above ±20V must be redesigned to comply with the substitute part's rating.

Frequently Asked Questions (FAQ)

Q: Can the FDS2670 be used as a direct replacement for the IRF7450TRPBF without PCB modifications?

A: Yes, the FDS2670 uses the same 8-SOIC package footprint (0.154", 3.90mm width) as the IRF7450TRPBF, allowing direct PCB placement without layout changes. However, gate drive circuit verification is required to confirm compatibility with the lower gate threshold voltage (4.5V vs. 5.5V) and the reduced absolute maximum gate voltage (±20V vs. ±30V).

Q: What are the key electrical differences between these two parts?

A: The primary differences are: (1) FDS2670 provides higher continuous drain current (3A vs. 2.5A), (2) FDS2670 has lower on-resistance (130 mOhm vs. 170 mOhm), (3) FDS2670 has lower gate threshold voltage (4.5V vs. 5.5V), and (4) FDS2670 has a lower absolute maximum gate voltage (±20V vs. ±30V). Both maintain the same 200V voltage rating, operating temperature range, and power dissipation rating.

Q: Why is the gate threshold voltage difference important?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn on the MOSFET. The FDS2670's lower threshold (4.5V) means it turns on at a lower gate voltage than the IRF7450TRPBF (5.5V). Existing gate drive circuits must be verified to ensure they can reliably drive the FDS2670 above its threshold voltage under all operating conditions.

Q: Does the higher gate charge of the FDS2670 affect circuit performance?

A: The gate charge difference is minimal (43 nC vs. 39 nC, approximately 10% higher). This affects the time required to charge the gate capacitance during switching transitions. In most applications, this difference has negligible impact on switching speed. Gate drive circuits with adequate current sourcing capability will not be affected.

Q: What is the significance of the different input capacitance measurement conditions?

A: The IRF7450TRPBF specifies Ciss at 25V Vds (940 pF), while the FDS2670 specifies it at 100V Vds (1228 pF). Input capacitance varies with drain-source voltage. Direct numerical comparison is not valid due to different measurement conditions. Both values are within typical ranges for this device class and do not indicate incompatibility.

Q: Is the FDS2670 suitable for applications requiring ±30V gate voltage?

A: No. The FDS2670 has an absolute maximum gate voltage of ±20V, compared to the IRF7450TRPBF's ±30V. Circuits applying gate voltages exceeding ±20V must be redesigned or a different substitute must be selected. Operating the FDS2670 beyond its ±20V gate voltage rating will cause device damage.

Q: What compliance certifications apply to the FDS2670?

A: The FDS2670 is RoHS3 compliant, REACH unaffected, and carries Moisture Sensitivity Level 1 (unlimited). These certifications match the IRF7450TRPBF and meet current regulatory requirements for electronic components in most markets.

Q: Why is the FDS2670 recommended over other potential substitutes?

A: The FDS2670 is recommended because it is the manufacturer-specified substitute part listed in the IRF7450TRPBF documentation. It provides superior electrical performance (lower on-resistance, higher current capacity), maintains identical package compatibility, and is in active production status, ensuring long-term availability.