IRF7425 Equivalent & Substitute Parts

Part Overview

The IRF7425 is a P-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications requiring 20V drain-to-source voltage capability and 15A continuous drain current. This device is part of the HEXFET® series and features a maximum power dissipation of 2.5W at ambient temperature.

The IRF7425 is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7425

Infineon TechnologiesIn Stock: 2223IRF7425 Datasheet

Current PartRFQ

FDS4465

onsemiIn Stock: 30559FDS4465 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7425 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 20V minimum rating
• Package / Case: 8-SOIC form factor with 0.154" (3.90mm) width
• Mounting Type: Surface Mount
• On-State Resistance (Rds On): Maximum 8.5 mOhm or lower at rated conditions
• Power Dissipation: 2.5W or greater at ambient temperature
• Operating Temperature Range: Minimum -55°C to +150°C or wider

The FDS4465 from onsemi meets these substitution criteria. Both devices share identical Vdss rating (20V), compatible package geometry (8-SOIC), equivalent power dissipation capability (2.5W), and comparable on-state resistance performance. The FDS4465 maintains P-Channel topology and surface mount configuration required for direct replacement.

Parameter Comparison

Engineering Selection Recommendations

IRF7425 (Infineon Technologies)

Product Status: Obsolete. This component is no longer in active production. RoHS Status: Non-compliant. Moisture Sensitivity Level: 1 (Unlimited). REACH Status: Unaffected.

The IRF7425 is suitable only for legacy system maintenance or repair applications where original component specifications are mandatory. New design implementations should not utilize this part.

FDS4465 (onsemi) — Recommended Substitute

Product Status: Active. This component is in current production with established supply chain availability. RoHS Status: ROHS3 Compliant. Moisture Sensitivity Level: 1 (Unlimited). REACH Status: Unaffected.

The FDS4465 is the manufacturer-recommended substitute for the IRF7425. It provides equivalent electrical performance within the 8-SOIC package footprint. The FDS4465 offers superior compliance status (ROHS3 Compliant versus non-compliant), extended operating temperature range (-55°C to 175°C versus -55°C to 150°C), and active production status ensuring long-term availability.

Selection Basis:

• Identical Vdss rating (20V) ensures voltage compatibility
• Equivalent Rds On performance (8.5 mOhm versus 8.2 mOhm) maintains thermal and efficiency characteristics
• Matching package geometry (8-SOIC, 0.154" width) enables direct PCB footprint compatibility
• Active product status and RoHS3 compliance support modern manufacturing and regulatory requirements
• Continuous drain current of 13.5A (FDS4465) versus 15A (IRF7425) requires application-level current margin verification

Frequently Asked Questions (FAQ)

Q: Can the FDS4465 directly replace the IRF7425 on existing PCBs?

A: Yes. Both devices use identical 8-SOIC package geometry with 0.154" (3.90mm) width. Pin-to-pin compatibility and footprint alignment are confirmed. No PCB layout modifications are required.

Q: What is the primary difference in continuous drain current between these parts?

A: The IRF7425 is rated for 15A continuous drain current at 25°C, while the FDS4465 is rated for 13.5A. Applications operating at or near 15A maximum current must verify that the FDS4465 provides adequate current margin for the intended load profile and thermal conditions.

Q: Are there gate voltage differences that affect driver circuit design?

A: Yes. The IRF7425 supports Vgs (Max) of ±12V, while the FDS4465 supports ±8V. Existing gate driver circuits must be verified to operate within the ±8V maximum specification of the FDS4465. Gate drive voltages exceeding ±8V will violate the FDS4465 absolute maximum rating.

Q: Does the FDS4465 have better temperature performance?

A: The FDS4465 supports an extended operating temperature range of -55°C to 175°C (junction temperature) compared to the IRF7425 range of -55°C to 150°C. This provides an additional 25°C margin at the upper temperature limit.

Q: What compliance advantages does the FDS4465 offer?

A: The FDS4465 is ROHS3 Compliant, while the IRF7425 is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the FDS4465 meets current environmental compliance standards. Both devices are REACH Unaffected.

Q: Are there differences in gate charge that affect switching speed?

A: Gate charge (Qg) is 130 nC for the IRF7425 and 120 nC for the FDS4465, both measured at 4.5V. The FDS4465 exhibits slightly lower gate charge, which may result in marginally faster switching transitions. This difference is typically negligible in most applications but should be verified in high-frequency switching circuits.

Q: What is the moisture sensitivity level for both parts?

A: Both the IRF7425 and FDS4465 are classified as MSL 1 (Unlimited). No moisture bake-out is required prior to soldering, and these components can be stored indefinitely under normal conditions without moisture sensitivity concerns.