IRF7424TR P-Channel MOSFET 30V 11A Equivalent & Substitute Parts

Part Overview

The IRF7424TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current in a surface mount 8-SO package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute components for new designs and ongoing production support. The IRF7424TRPBF represents the direct equivalent with active product status, while additional substitutes from onsemi and other manufacturers provide functional alternatives with varying electrical characteristics within acceptable operating parameters.

Key Parameters

Parameter	Value	Unit	Condition
FET Type	P-Channel	—	—
Drain-to-Source Voltage (Vdss)	30	V	Maximum rating
Continuous Drain Current (Id)	11	A	@ 25°C (Tc/Ta)
On-State Resistance (Rds On)	13.5	mOhm	@ 11A, 10V Vgs
Gate-Source Threshold Voltage (Vgs(th))	2.5	V	@ 250µA Id
Gate Charge (Qg)	110	nC	@ 10V Vgs
Input Capacitance (Ciss)	4030	pF	@ 25V Vds
Power Dissipation (Max)	2.5	W	@ Ta
Operating Temperature Range	-55 to 150	°C	Tj
Package Type	8-SOIC	—	0.154" width, 3.90mm
Mounting Type	Surface Mount	—	—

Substitute Part Grouping Explanation

Substitution of the IRF7424TR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel (mandatory)
Package: 8-SOIC surface mount (mandatory for mechanical compatibility)
Drain-to-Source Voltage (Vdss): 30V minimum (allows higher ratings)
Continuous Drain Current (Id): 11A minimum at 25°C
On-State Resistance (Rds On): 13.5mOhm maximum @ rated conditions
Operating Temperature: -55°C to 150°C minimum range
Gate-Source Voltage (Vgs): ±20V minimum rating

Direct Equivalent Category: IRF7424TRPBF maintains identical electrical specifications to the main part with active product status and RoHS3 compliance.

Functional Substitute Categories:

30V Voltage Class, 11A+ Current Rating: FDS6675BZ, FDS6673BZ, RSS090P03TB
30V Voltage Class, Lower Current Rating: NTMS4177PR2G (6.6A, acceptable for reduced load applications)
20V Voltage Class, 10A+ Current Rating: DMP2022LSS-13, FDS4465, FDS6576 (suitable for applications with lower voltage requirements)
Legacy/Not For New Designs: RRH090P03GZETB, RRH100P03GZETB (active inventory but obsolescence path)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status	RoHS
IRF7424TR	Infineon	30	11	13.5	2.5	110	4030	2.5	Obsolete	Non-compliant
IRF7424TRPBF	Infineon	30	11	13.5	2.5	110	4030	2.5	Active	ROHS3
FDS6675BZ	onsemi	30	11	13	3	62	2470	2.5	Active	ROHS3
FDS6673BZ	onsemi	30	14.5	7.8	3	124	4700	2.5	Active	ROHS3
RSS090P03TB	Rohm	30	9	14	2.5	39	4000	2	Active	ROHS3
NTMS4177PR2G	onsemi	30	6.6	12	2.5	55	3100	0.84	Active	ROHS3
DMP2022LSS-13	Diodes Inc.	20	10	13	1.1	56.9	2444	2.5	Active	ROHS3
FDS4465	onsemi	20	13.5	8.5	1.5	120	8237	2.5	Active	ROHS3
FDS6576	onsemi	20	11	14	1.5	60	4044	2.5	Active	ROHS3
RRH090P03GZETB	Rohm	30	9	15.4	2.5	56	3000	0.65	Not For New Designs	ROHS3
RRH100P03GZETB	Rohm	30	10	12.6	2.5	68	3600	0.65	Not For New Designs	ROHS3

Engineering Selection Recommendations

Direct Replacement (Recommended for Existing Designs):

IRF7424TRPBF is the direct functional equivalent with identical electrical specifications. This part maintains full compatibility with existing PCB layouts and circuit designs. The transition from IRF7424TR to IRF7424TRPBF requires no design modifications. IRF7424TRPBF carries active product status and RoHS3 compliance, addressing the obsolescence of the original part.

Primary Substitutes (30V Class, Matched Current Rating):

FDS6675BZ (onsemi) provides equivalent 30V/11A performance with superior on-state resistance (13mOhm vs. 13.5mOhm) and lower gate charge (62nC vs. 110nC), resulting in improved switching efficiency. This part is actively produced with RoHS3 compliance.

FDS6673BZ (onsemi) offers 30V rating with enhanced current capability (14.5A) and lower on-state resistance (7.8mOhm), suitable for applications requiring thermal margin or higher transient current handling. Gate charge increases to 124nC.

RSS090P03TB (Rohm) provides 30V/9A operation with active product status. Power dissipation is rated at 2W (Ta), which is lower than the main part specification. This device is suitable for applications where the 9A rating is sufficient.

Secondary Substitutes (20V Class):

DMP2022LSS-13, FDS4465, and FDS6576 operate at 20V maximum drain-to-source voltage. These parts are applicable only in circuits where the supply voltage does not exceed 20V. FDS4465 provides enhanced current capability (13.5A) with improved on-state resistance (8.5mOhm). All three maintain 2.5W power dissipation and RoHS3 compliance.

Legacy Parts (Not Recommended for New Designs):

RRH090P03GZETB and RRH100P03GZETB carry "Not For New Designs" status despite active inventory. These parts feature reduced power dissipation ratings (0.65W Ta) and are suitable only for sustaining existing production where design changes are not feasible.

Product Status Compliance:

All recommended substitutes carry active product status with RoHS3 compliance, ensuring long-term availability and regulatory alignment. The original IRF7424TR (obsolete, RoHS non-compliant) should be phased out in favor of IRF7424TRPBF or functional equivalents.

Frequently Asked Questions (FAQ)

Q1: Can IRF7424TRPBF be used as a direct drop-in replacement for IRF7424TR?

A: Yes. IRF7424TRPBF is the direct equivalent with identical electrical specifications (30V, 11A, 13.5mOhm Rds On, 8-SOIC package). No circuit modifications are required. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q2: What are the key differences between 30V and 20V substitute options?

A: 30V-rated devices (FDS6675BZ, FDS6673BZ, RSS090P03TB) maintain the original voltage margin and are suitable for circuits with supply voltages up to 30V. 20V-rated devices (DMP2022LSS-13, FDS4465, FDS6576) are restricted to applications with maximum supply voltage of 20V. Selection depends on circuit voltage requirements.

Q3: Why does FDS6673BZ have lower on-state resistance than the original part?

A: FDS6673BZ is rated for 14.5A continuous current compared to 11A for IRF7424TR. The lower on-state resistance (7.8mOhm vs. 13.5mOhm) reflects the device's higher current capability and improved silicon technology. This results in lower power dissipation at rated current levels.

Q4: Are all substitute parts available in the same 8-SOIC package?

A: Yes. All listed substitutes use 8-SOIC (0.154" width, 3.90mm) surface mount packaging, ensuring mechanical compatibility with existing PCB layouts. Package dimensions are identical across all parts.

Q5: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (FDS6675BZ at 62nC) enables faster switching with lower driver power consumption. Higher gate charge (FDS6673BZ at 124nC) may require higher driver current but does not prevent substitution if the driver circuit is capable.

Q6: Can NTMS4177PR2G be used in applications requiring 11A continuous current?

A: No. NTMS4177PR2G is rated for 6.6A continuous current, which is below the 11A requirement of IRF7424TR. This part is suitable only for applications with reduced current demands. Power dissipation is also limited to 840mW (Ta).

Q7: Why are RRH090P03GZETB and RRH100P03GZETB marked "Not For New Designs"?

A: These Rohm devices carry legacy status indicating they are in the obsolescence phase. While active inventory exists, manufacturers recommend using alternative parts for new designs. These devices are suitable only for sustaining production of existing products.

Q8: What compliance certifications apply to all recommended substitutes?

A: All active substitute parts carry RoHS3 compliance and REACH Unaffected status. ECCN classification is EAR99 for all parts. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all devices, indicating no special moisture handling requirements.

Q9: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance influences gate drive circuit design and switching transient behavior. FDS6675BZ has lower Ciss (2470pF) compared to IRF7424TR (4030pF), resulting in faster gate charging and potentially improved switching performance. Higher Ciss values (FDS4465 at 8237pF) require more driver current but do not prevent substitution.

Q10: Are there inventory considerations for part selection?

A: Yes. IRF7424TRPBF has 60,100 pieces in stock (direct equivalent). FDS6675BZ and FDS6673BZ each have approximately 50,000 pieces available. RSS090P03TB has 120,200 pieces in stock. NTMS4177PR2G has 35,300 pieces. Availability should be confirmed with suppliers for production quantities.

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