IRF7424PBF P-Channel MOSFET 30V 11A Equivalent & Substitute Parts

Part Overview

The IRF7424PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7424PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF7424PBF
Infineon TechnologiesIn Stock: 7113IRF7424PBF Datasheet
IRF7424PBF
Current Part
DMG4407SSS-13
Diodes IncorporatedIn Stock: 24616DMG4407SSS-13 Datasheet
DMG4407SSS-13
MFR Recommended
DMP2022LSS-13
Diodes IncorporatedIn Stock: 42540DMP2022LSS-13 Datasheet
DMP2022LSS-13
MFR Recommended
FDS4465
onsemiIn Stock: 30559FDS4465 Datasheet
FDS4465
MFR Recommended
FDS6576
onsemiIn Stock: 28803FDS6576 Datasheet
FDS6576
MFR Recommended
FDS6673BZ
onsemiIn Stock: 50461FDS6673BZ Datasheet
FDS6673BZ
MFR Recommended
FDS6675BZ
onsemiIn Stock: 50210FDS6675BZ Datasheet
FDS6675BZ
MFR Recommended
NTMS10P02R2G
onsemiIn Stock: 15468NTMS10P02R2G Datasheet
NTMS10P02R2G
MFR Recommended
PJL9415_R2_00001
Panjit International Inc.In Stock: 17747PJL9415_R2_00001 Datasheet
PJL9415_R2_00001
MFR Recommended
RRH090P03GZETB
Rohm SemiconductorIn Stock: 2338RRH090P03GZETB Datasheet
RRH090P03GZETB
MFR Recommended
RRH100P03GZETB
Rohm SemiconductorIn Stock: 2129RRH100P03GZETB Datasheet
RRH100P03GZETB
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 11 A
Rds On (Max) @ 11A, 10V 13.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.5 V
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)

Substitute Part Grouping Explanation

Substitution of the IRF7424PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel (required)
  • Drain to Source Voltage (Vdss): 30V minimum (allows higher ratings)
  • Continuous Drain Current (Id): 11A minimum at 25°C (allows higher ratings)
  • Package: 8-SOIC or 8-SO surface mount (mechanical compatibility)
  • Operating Temperature: -55°C to 150°C minimum range (thermal compatibility)

Secondary Compatibility Parameters:

  • Rds On (Max): 13.5 mOhm or lower (on-resistance performance)
  • Gate Threshold Voltage: 2.5V or lower (gate drive compatibility)
  • Power Dissipation: 2.5W or higher (thermal handling)

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (30V, 11A): Parts with matching 30V Vdss and 11A Id ratings. These provide the closest functional replacement with identical voltage and current specifications.

Category B – Functional Alternatives (30V, higher current or 20V, 10A+): Parts with 30V Vdss but higher current ratings, or 20V Vdss with 10A+ current. These provide enhanced performance margins but require voltage derating consideration in 30V applications.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Vgs(th) (V) Power Diss. (W) Temp Range (°C) Package Status
IRF7424PBF Infineon 30 11 13.5 2.5 2.5 -55 to 150 8-SOIC Discontinued
FDS6675BZ onsemi 30 11 13 3 2.5 -55 to 150 8-SOIC Active
FDS6673BZ onsemi 30 14.5 7.8 3 2.5 -55 to 150 8-SOIC Active
PJL9415_R2_00001 Panjit 30 12 9.5 2.5 1.7 -55 to 150 8-SOIC Active
DMG4407SSS-13 Diodes Inc. 30 9.9 11 3 1.45 -50 to 150 8-SOIC Active
RRH100P03GZETB Rohm 30 10 12.6 2.5 0.65 -55 to 150 8-SOIC Not For New Designs
RRH090P03GZETB Rohm 30 9 15.4 2.5 0.65 -55 to 150 8-SOIC Not For New Designs
FDS6576 onsemi 20 11 14 1.5 2.5 -55 to 150 8-SOIC Active
FDS4465 onsemi 20 13.5 8.5 1.5 2.5 -55 to 175 8-SOIC Active
DMP2022LSS-13 Diodes Inc. 20 10 13 1.1 2.5 -55 to 150 8-SOIC Active
NTMS10P02R2G onsemi 20 8.8 14 1.2 1.6 -55 to 150 8-SOIC Active

Engineering Selection Recommendations

Tier 1 – Direct Replacement (Recommended for Existing Designs):

FDS6675BZ (onsemi) is the primary direct substitute for IRF7424PBF. Both devices share identical 30V Vdss and 11A Id ratings, matching package geometry (8-SOIC), and equivalent on-resistance performance (13 mOhm vs. 13.5 mOhm). FDS6675BZ is currently in active production with high inventory availability (50,100 pcs). Operating temperature range (-55°C to 150°C) and RoHS3 compliance are identical. This part requires no circuit redesign.

Tier 2 – Enhanced Performance Substitutes (30V Rating):

FDS6673BZ (onsemi) provides superior on-resistance (7.8 mOhm) and higher current capability (14.5A) while maintaining 30V Vdss rating. This part is suitable for applications requiring improved thermal performance or current margin. Gate threshold voltage increases to 3V, requiring verification of gate drive circuit compatibility.

PJL9415_R2_00001 (Panjit) offers 30V Vdss with 12A Id and excellent on-resistance (9.5 mOhm). Power dissipation is lower (1.7W vs. 2.5W), making this suitable for thermally constrained applications. Gate threshold voltage matches the original (2.5V). Active production status with 17,700 pcs inventory.

Tier 3 – Voltage-Derated Alternatives (20V Rating):

FDS6576, FDS4465, DMP2022LSS-13, and NTMS10P02R2G are rated for 20V Vdss. These parts are suitable only for applications where the maximum operating voltage does not exceed 20V. FDS4465 provides the best on-resistance performance (8.5 mOhm) among 20V options. These substitutes are not recommended for 30V-rated circuit designs without voltage derating analysis.

Tier 4 – Legacy Parts (Not Recommended for New Designs):

RRH090P03GZETB and RRH100P03GZETB (Rohm Semiconductor) are marked "Not For New Designs." While electrically compatible with 30V Vdss and matching temperature range, these parts have limited inventory (2,258 and 2,030 pcs respectively) and reduced power dissipation ratings (650 mW). Use only for legacy system maintenance where supply continuity is critical.

Compliance and Certification:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, matching the original IRF7424PBF certification profile. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095 (or 8541.21.0095 for Rohm devices).

Frequently Asked Questions (FAQ)

Q1: Can FDS6675BZ directly replace IRF7424PBF without circuit modification?

Yes. FDS6675BZ is a direct electrical and mechanical equivalent. Both devices have identical 30V Vdss, 11A Id, 8-SOIC package, and operating temperature range (-55°C to 150°C). On-resistance values are nearly identical (13 mOhm vs. 13.5 mOhm). No PCB layout changes or gate drive circuit adjustments are required.

Q2: Why do some substitute parts have lower Vdss ratings (20V instead of 30V)?

Parts rated for 20V Vdss cannot safely operate at 30V. These substitutes are listed because they share the same package and similar current/on-resistance characteristics. They are suitable only for applications designed for 20V maximum operating voltage. Using a 20V-rated part in a 30V circuit creates risk of gate oxide breakdown and device failure.

Q3: What is the significance of gate threshold voltage (Vgs(th)) differences?

Gate threshold voltage determines the minimum gate-to-source voltage required to turn the device on. The original IRF7424PBF specifies 2.5V @ 250µA. Substitutes with higher Vgs(th) (such as FDS6675BZ at 3V) require slightly higher gate drive voltage but remain compatible with standard gate drive circuits. Lower Vgs(th) values (such as FDS6576 at 1.5V) provide easier gate drive but may increase susceptibility to parasitic turn-on in noisy environments.

Q4: Can I use FDS6673BZ (14.5A) instead of IRF7424PBF (11A) for improved performance?

Yes, with design verification. FDS6673BZ provides higher current capability and superior on-resistance (7.8 mOhm vs. 13.5 mOhm), resulting in lower power dissipation and improved thermal performance. The 30V Vdss rating is identical. However, gate threshold voltage increases to 3V, requiring confirmation that your gate drive circuit can reliably turn on the device. Higher current capability does not require circuit changes but allows for better performance margins.

Q5: What is the difference between 8-SO and 8-SOIC packaging?

Both designations refer to 8-pin surface-mount packages with 0.154" (3.90mm) width. The terms are used interchangeably in industry documentation. All substitute parts listed use compatible 8-SOIC packaging and are mechanically interchangeable on standard PCBs designed for the original IRF7424PBF.

Q6: Why is inventory quantity important when selecting a substitute?

Inventory availability indicates long-term supply reliability. FDS6675BZ (50,100 pcs) and FDS6673BZ (50,400 pcs) have substantial stock, ensuring continued availability for production runs. Parts with lower inventory (RRH090P03GZETB at 2,258 pcs) may face supply constraints. For new designs, prioritize parts with active production status and higher inventory levels.

Q7: Are all substitute parts RoHS3 compliant?

Yes. All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, matching the original IRF7424PBF. This ensures compatibility with environmental regulations and customer requirements for lead-free manufacturing.

Q8: What does "Not For New Designs" status mean for Rohm parts?

This designation indicates that Rohm Semiconductor is not recommending these parts for new circuit designs, though they remain available for legacy system support. These parts may have limited long-term availability or reduced manufacturing priority. For new designs, select parts with "Active" status such as FDS6675BZ, FDS6673BZ, or PJL9415_R2_00001.

Request Quote (Ships tomorrow)