IRF7420TR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7420TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 12V drain-to-source voltage with 11.5A continuous drain current. This device is part of the HEXFET® series and is packaged in 8-SO surface mount configuration. The IRF7420TR is classified as obsolete product status, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	12	V
Continuous Drain Current (Id) @ 25°C	11.5	A
On-Resistance (Rds On Max) @ 11.5A, 4.5V	14	mOhm
Gate Threshold Voltage (Vgs th Max) @ 250µA	900	mV
Gate Charge (Qg Max) @ 4.5V	38	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
FET Type	P-Channel	-

Substitute Part Grouping Explanation

Substitution of the IRF7420TR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel configuration required
Drain-to-Source Voltage (Vdss): Minimum 12V (higher voltage ratings acceptable for backward compatibility)
Continuous Drain Current (Id): Minimum 11A at rated conditions
On-Resistance (Rds On): Maximum 16mOhm at rated current and gate voltage
Package Type: 8-SOIC surface mount configuration
Gate Voltage (Vgs Max): Minimum ±8V support
Operating Temperature: Minimum -55°C to 150°C range

Substitute Parts Identified:

AO4437L (Alpha & Omega Semiconductor) - Direct voltage and current class substitute with active product status
FDS6575 (onsemi) - Higher voltage rating (20V) with equivalent current handling and improved thermal performance
FDS6576 (onsemi) - Higher voltage rating (20V) with matched current rating and active product status
FDS6375 (onsemi) - Higher voltage rating (20V) with reduced current rating but superior thermal characteristics

All substitute parts maintain 8-SOIC packaging, P-Channel configuration, and surface mount mounting type.

Parameter Comparison

Parameter	IRF7420TR	AO4437L	FDS6575	FDS6576	FDS6375
Manufacturer	Infineon	Alpha & Omega	onsemi	onsemi	onsemi
Vdss (V)	12	12	20	20	20
Id @ 25°C (A)	11.5	11	10	11	8
Rds On Max @ rated Id, 4.5V (mOhm)	14	16	13	14	24
Vgs th Max @ 250µA (mV)	900	1000	1500	1500	1500
Qg Max @ 4.5V (nC)	38	47	74	60	36
Power Dissipation Max (W)	2.5	3	2.5	2.5	2.5
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 175
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

AO4437L Selection Criteria: The AO4437L provides the closest electrical match to the IRF7420TR with identical 12V voltage rating and near-equivalent 11A current rating. This substitute maintains compatibility with existing 12V system designs. The AO4437L carries active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. Slightly elevated on-resistance (16mOhm vs. 14mOhm) and gate charge (47nC vs. 38nC) require thermal and switching frequency verification in high-performance applications.

FDS6575 and FDS6576 Selection Criteria: Both onsemi PowerTrench® devices offer 20V voltage rating, providing design margin above the 12V requirement. FDS6576 matches the 11A current specification exactly, while FDS6575 provides 10A capability. Both devices maintain active product status and ROHS3 compliance. The elevated voltage rating permits use in systems with potential voltage transients or future design upgrades. Gate charge values (60-74nC) are higher than the original part, affecting switching speed in high-frequency applications.

FDS6375 Selection Criteria: The FDS6375 provides the lowest gate charge (36nC) among substitutes, beneficial for fast switching applications. The 20V rating and 8A current capability support lower-power circuit implementations. ROHS3 compliance and active status ensure supply continuity. The reduced current rating (8A vs. 11.5A) limits application to designs with lower current demands.

Compliance and Availability: All substitute parts are ROHS3 compliant, addressing regulatory requirements absent in the obsolete IRF7420TR. All substitutes maintain active product status with documented inventory availability, ensuring procurement reliability for production and maintenance applications.

Frequently Asked Questions (FAQ)

Q: Can the AO4437L directly replace the IRF7420TR in existing designs?

A: The AO4437L is electrically compatible for 12V applications with current requirements up to 11A. Both devices share 8-SOIC packaging and P-Channel configuration. The slightly higher on-resistance (16mOhm vs. 14mOhm) and gate charge (47nC vs. 38nC) require verification in thermally constrained or high-frequency switching circuits. No PCB layout modifications are necessary.

Q: Why do the onsemi FDS65xx series have higher voltage ratings than the original IRF7420TR?

A: The FDS6575, FDS6576, and FDS6375 are rated for 20V drain-to-source voltage compared to the IRF7420TR's 12V rating. Higher voltage ratings provide design margin for transient overvoltage conditions and enable use in systems with future voltage upgrades. These devices remain fully functional in 12V applications, with the higher voltage rating representing an additional design capability rather than a requirement.

Q: What are the package compatibility considerations?

A: All substitute parts use 8-SOIC (0.154", 3.90mm width) surface mount packaging, identical to the IRF7420TR. Pin configurations are compatible for P-Channel MOSFET applications. Direct PCB footprint compatibility is confirmed. No layout or assembly modifications are required for package substitution.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRF7420TR specifies 38nC at 4.5V. Substitute parts range from 36nC (FDS6375) to 74nC (FDS6575). Higher gate charge increases switching losses and may reduce maximum switching frequency in high-speed applications. Circuit designs with gate drivers rated for higher charge values accommodate all substitutes without modification.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts (AO4437L, FDS6575, FDS6576, FDS6375) carry ROHS3 compliance certification. The original IRF7420TR is RoHS non-compliant. Substitution with any of these parts satisfies RoHS regulatory requirements for new designs and production updates.

Q: Which substitute is recommended for high-frequency switching applications?

A: The FDS6375 offers the lowest gate charge (36nC), minimizing switching losses in high-frequency circuits. However, its 8A current rating limits application to lower-power designs. For applications requiring both high frequency and 11A+ current capability, the FDS6576 (60nC gate charge) provides the best balance among higher-current substitutes.

Q: Can substitutes be used interchangeably in the same design?

A: Substitutes are not fully interchangeable without circuit analysis. The AO4437L maintains the closest electrical match for 12V designs. The FDS65xx series (20V rating) introduce higher voltage capability but different gate charge characteristics. Selection depends on specific circuit requirements for voltage margin, current capacity, switching frequency, and thermal performance. Each substitute should be evaluated against the application's electrical specifications.

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