IRF7413ZPBF Equivalent & Substitute MOSFETs Reference

Part Overview

The IRF7413ZPBF is an Infineon Technologies N-Channel MOSFET in the HEXFET® series, designed for surface mount applications with a maximum drain-to-source voltage of 30 V and continuous drain current capability of 13A (Ta). Its maximum Rds On is 10mOhm at 13A, 10V. This device is supplied in an 8-SOIC package (0.154", 3.90mm Width) and meets ROHS3 compliance. The part status is discontinued at Digi-Key, requiring engineers to identify equivalent and substitute MOSFETs with matching electrical and mechanical characteristics.

Key Parameters

Parameter	IRF7413ZPBF
Manufacturer	Infineon Technologies
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1210 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Equivalent and substitute MOSFETs for IRF7413ZPBF are determined strictly by matching electrical and package parameters. Key parameters for substitution include FET type (N-Channel), MOSFET technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, drive voltage ranges, maximum Rds On at relevant operating points, gate threshold voltage (Vgs(th)), maximum gate charge (Qg), maximum Vgs, input capacitance (Ciss), power dissipation, mounting type, package format, RoHS compliance, MSL, and REACH status. Only MOSFETs with corresponding or near-identical values in these fields and the same 8-SOIC package are included.

Parameter Comparison

Parameter	IRF7413ZPBF	AO4468	FDS6670A	SI4420BDY-T1-GE3
Manufacturer	Infineon Technologies	Alpha & Omega Semiconductor Inc.	Fairchild Semiconductor	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)	10.5A (Ta)	13A (Ta)	9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 13A, 10V	14mOhm @ 11.6A, 10V	8mOhm @ 13A, 10V	8.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25µA	3V @ 250µA	3V @ 250µA	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V	24 nC @ 10 V	30 nC @ 5 V	50 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1210 pF @ 15 V	1200 pF @ 15 V	2220 pF @ 15 V	1200 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	3.1W (Ta)	2.5W (Ta)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	8-SO	8-SOIC	8-SOIC	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant		ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)		1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected		REACH Unaffected

Engineering Selection Recommendations

The IRF7413ZPBF is discontinued at Digi-Key, necessitating an equivalent or substitute. AO4468, FDS6670A, and SI4420BDY-T1-GE3 maintain required product compliance, including ROHS3 and MSL 1 where specified. Each substitute part is available in the same 8-SOIC surface mount package, supports the same N-Channel MOSFET technology, and is REACH unaffected. Selecting from these options preserves compliance and supply chain reliability for engineering requirements.

Frequently Asked Questions (FAQ)

Q: What parameters must match to substitute IRF7413ZPBF?
A: Substitute parts must share FET type, technology, drain to source voltage, continuous drain current, Rds On values, gate properties, package type, mounting, and compliance status.

Q: Are all substitute MOSFETs supplied in 8-SOIC packages?
A: Yes, AO4468, FDS6670A, and SI4420BDY-T1-GE3 are supplied in 8-SOIC (0.154", 3.90mm Width), matching the IRF7413ZPBF mechanical footprint.

Q: Does ROHS or MSL compliance differ among substitutes?
A: AO4468 and SI4420BDY-T1-GE3 explicitly state ROHS3 compliance and MSL 1 (Unlimited), matching IRF7413ZPBF. FDS6670A does not disclose these fields in the provided data.

Q: Are there variations in drain current or Rds On values among substitutes?
A: There are minor differences; FDS6670A and SI4420BDY-T1-GE3 offer similar or lower Rds On, while AO4468 supports slightly less drain current.

Q: Is there any difference in operating temperature range?
A: All listed substitutes specify -55°C ~ 150°C (TJ), aligning with the IRF7413ZPBF.

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