IRF7413Z N-Channel MOSFET 30V 13A Equivalent & Substitute Parts

Part Overview

The IRF7413Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7413Z is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts for the IRF7413Z must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance, while accommodating variations in gate charge, input capacitance, and packaging configurations.

Key Parameters

Parameter	IRF7413Z Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	13	A (Ta)
On-Resistance (Rds On Max) @ 13A, 10V	10	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2.25	V
Gate Charge (Qg Max) @ 4.5V	14	nC
Input Capacitance (Ciss Max) @ 15V	1210	pF
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitute parts for the IRF7413Z are classified based on strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V (exact match required)
Continuous Drain Current (Id): 13A or higher at 25°C
On-Resistance (Rds On): 10mOhm or lower at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Within specified range
Operating Temperature Range: -55°C to 150°C minimum
Package: 8-SOIC surface mount configuration

Secondary Compatibility Parameters:

Gate Charge (Qg): Variations acceptable within circuit design margins
Input Capacitance (Ciss): Variations acceptable with circuit compensation
Power Dissipation: Must support thermal requirements of application
RoHS Compliance: Preferred for new designs and long-term availability

Substitutes are grouped into two categories: direct equivalents (matching all primary criteria with identical or superior electrical performance) and functional alternatives (meeting primary criteria with acceptable parameter variations).

Parameter Comparison

Parameter	IRF7413Z	IRF7413ZTRPBF	BSO110N03MSGXUMA1	AO4468	FDS6670A	Unit
Vdss	30	30	30	30	30	V
Id @ 25°C	13	13	10	10.5	13	A (Ta)
Rds On (Max) @ 10V	10	10	11	14	8	mOhm
Vgs(th) (Max)	2.25	2.25	2	3	3	V
Qg (Max)	14	14	20	24	30	nC
Ciss (Max) @ 15V	1210	1210	1500	1200	2220	pF
Power Dissipation (Max)	2.5	2.5	1.56	3.1	2.5	W (Ta)
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	-
Product Status	Obsolete	Active	Active	Not For New Designs	Active	-
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	-

Engineering Selection Recommendations

Tier 1 - Direct Equivalent (Recommended Primary Substitute):

IRF7413ZTRPBF is the recommended primary substitute for IRF7413Z. This part is manufactured by Infineon Technologies and maintains identical electrical specifications including 30V Vdss, 13A continuous drain current, and 10mOhm on-resistance at rated conditions. The IRF7413ZTRPBF is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Packaging is available in Cut Tape (CT) and Digi-Reel® formats, supporting both prototype and production environments. Inventory availability is substantial (29,735 pcs), providing supply security.

Tier 2 - Functional Alternatives (Secondary Substitutes):

FDS6670A (Fairchild Semiconductor, PowerTrench® series) provides electrical performance equivalent to IRF7413Z with superior on-resistance (8mOhm vs. 10mOhm) and identical current rating (13A). This part is Active status with 28,886 pcs inventory. Gate charge is higher (30nC vs. 14nC) and input capacitance is elevated (2220pF vs. 1210pF), requiring circuit verification for switching speed and drive requirements.

BSO110N03MSGXUMA1 (Infineon Technologies, OptiMOS™ series) is Active status with ROHS3 compliance but presents reduced current rating (10A vs. 13A) and slightly elevated on-resistance (11mOhm vs. 10mOhm). This substitute is suitable only for applications with current requirements below 10A. Power dissipation is lower (1.56W), indicating reduced thermal load. Moisture sensitivity level is MSL 3 (168 hours), requiring controlled storage conditions.

AO4468 (Alpha & Omega Semiconductor Inc.) is classified as Not For New Designs and should not be selected for new product development. Current rating is 10.5A with on-resistance of 14mOhm, both inferior to IRF7413Z specifications. This part is retained in the substitute list for legacy system maintenance only.

Selection Criteria Summary:

New designs: Select IRF7413ZTRPBF
High-performance applications requiring lower on-resistance: Select FDS6670A with circuit validation
Current-limited applications (≤10A): Select BSO110N03MSGXUMA1
Legacy system support only: AO4468 acceptable with performance verification

Frequently Asked Questions (FAQ)

Q1: Can IRF7413ZTRPBF be used as a direct replacement for IRF7413Z without circuit modification?

A: Yes. IRF7413ZTRPBF is electrically and mechanically identical to IRF7413Z across all critical parameters: 30V Vdss, 13A continuous drain current, 10mOhm on-resistance, and 8-SOIC package. No circuit modification is required. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q2: What are the key differences between IRF7413ZTRPBF and FDS6670A?

A: Both parts share 30V Vdss and 13A current rating. FDS6670A offers superior on-resistance (8mOhm vs. 10mOhm), reducing conduction losses. However, FDS6670A has significantly higher gate charge (30nC vs. 14nC) and input capacitance (2220pF vs. 1210pF). These differences affect switching speed and gate drive requirements. Circuit validation is required before substitution.

Q3: Is BSO110N03MSGXUMA1 suitable for all IRF7413Z applications?

A: No. BSO110N03MSGXUMA1 has reduced continuous drain current (10A vs. 13A) and slightly higher on-resistance (11mOhm vs. 10mOhm). This substitute is suitable only for applications with maximum current requirements below 10A. Thermal analysis must confirm adequate power dissipation margin (1.56W vs. 2.5W).

Q4: Why is AO4468 listed as a substitute if it is marked "Not For New Designs"?

A: AO4468 is included for legacy system maintenance and repair scenarios where IRF7413Z components must be replaced in existing equipment. New product development should not select AO4468. For new designs, IRF7413ZTRPBF is the recommended substitute.

Q5: Are there package compatibility concerns when substituting these parts?

A: All listed substitutes use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring mechanical compatibility with IRF7413Z PCB layouts. No package-related modifications are required. However, BSO110N03MSGXUMA1 uses PG-DSO-8 supplier package designation; verify footprint compatibility with design documentation.

Q6: What is the impact of higher gate charge in FDS6670A on circuit performance?

A: Gate charge (Qg) of 30nC in FDS6670A versus 14nC in IRF7413Z requires higher gate drive current or longer switching times. This affects switching frequency capability and power dissipation in the gate driver circuit. Applications with high switching frequencies (>100kHz) require gate driver re-evaluation before FDS6670A substitution.

Q7: Does RoHS compliance affect electrical performance?

A: No. RoHS compliance (ROHS3 in IRF7413ZTRPBF, BSO110N03MSGXUMA1, and AO4468) indicates manufacturing process compliance with hazardous substance restrictions. Electrical performance is unaffected. RoHS compliance is relevant for regulatory requirements and long-term supply chain sustainability.

Q8: What is the significance of MSL (Moisture Sensitivity Level) differences?

A: IRF7413Z, IRF7413ZTRPBF, and AO4468 have MSL 1 (Unlimited), requiring no special moisture control during storage and handling. BSO110N03MSGXUMA1 has MSL 3 (168 hours), requiring controlled storage conditions and bake-out procedures before reflow soldering if exposed to ambient humidity for extended periods. This affects component handling and manufacturing processes.

Q9: Can multiple substitutes be used interchangeably in the same circuit?

A: No. Each substitute has distinct electrical characteristics. IRF7413ZTRPBF is the only true direct equivalent. FDS6670A, BSO110N03MSGXUMA1, and AO4468 have parameter variations requiring individual circuit validation. Mixing substitutes in the same design is not recommended without comprehensive electrical analysis.

Q10: What inventory considerations should guide substitute selection?

A: IRF7413ZTRPBF has the highest inventory (29,735 pcs), ensuring supply continuity. FDS6670A (28,886 pcs) and AO4468 (60,300 pcs) also have substantial stock. BSO110N03MSGXUMA1 (8,436 pcs) has lower availability. For production programs requiring long-term supply security, IRF7413ZTRPBF is the preferred choice.

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