IRF7413ATR N-Channel 30V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7413ATR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device features the HEXFET® series technology in an 8-SO surface mount package and is designed for general-purpose switching applications requiring moderate power dissipation (2.5W maximum).

The IRF7413ATR is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance.

Key Parameters

Parameter	Value	Unit	Specification Condition
Drain-to-Source Voltage (Vdss)	30	V	Maximum rating
Continuous Drain Current (Id)	12	A	@ 25°C (Ta)
On-Resistance (Rds On)	13.5	mOhm	@ 6.6A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	1	V	@ 250µA Id
Gate Charge (Qg)	79	nC	@ 10V Vgs
Input Capacitance (Ciss)	1800	pF	@ 25V Vds
Power Dissipation (Max)	2.5	W	@ Ta
Operating Temperature Range	-55 to 150	°C	Junction temperature (TJ)
Package Type	8-SOIC	-	0.154" width, 3.90mm
Mounting Type	Surface Mount	-	-

Substitute Part Grouping Explanation

Substitution of the IRF7413ATR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 12A at 25°C
On-Resistance (Rds On): Must not significantly exceed 13.5mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must not exceed 2.5W to maintain thermal design margins
Operating Temperature Range: Must support -55°C to 150°C minimum

Substitute parts are grouped based on whether they meet all primary criteria while maintaining electrical performance within acceptable engineering tolerances.

Parameter Comparison

Parameter	IRF7413ATR (Main)	DMN3016LSS-13	FDS4672A	FDS6690A	FDS8878	SI4874BDY-T1-E3	RSS100N03TB	RSS125N03TB
Manufacturer	Infineon	Diodes Inc.	onsemi	onsemi	Fairchild	Vishay	Rohm	Rohm
Vdss (V)	30	30	40	30	30	30	30	30
Id @ 25°C (A)	12	10.3	11	11	10.2	12	10	12.5
Rds On (mOhm)	13.5	12	13	12.5	14	7	13	8.9
Vgs(th) (V)	1	2.5	2	3	2.5	3	2.5	2.5
Qg (nC)	79	25.1	49	16	26	25	14	28
Ciss (pF)	1800	1415	4766	1205	897	3230	1070	1670
Power Dissipation (W)	2.5	1.5	2.5	2.5	2.5	1.6	2	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SO	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOP	8-SOP
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Direct Electrical Equivalents (Recommended for Drop-In Replacement):

SI4874BDY-T1-E3 (Vishay Siliconix) is the primary recommended substitute. This device matches the IRF7413ATR across all critical electrical parameters: 30V Vdss, 12A Id rating, and 8-SOIC package compatibility. The SI4874BDY-T1-E3 features superior on-resistance (7mOhm versus 13.5mOhm), resulting in lower power dissipation and improved thermal performance. Product status is Active with ROHS3 compliance, ensuring long-term supply availability and regulatory compliance. Gate charge is reduced to 25nC, improving switching efficiency.

RSS125N03TB (Rohm Semiconductor) provides equivalent electrical performance with 12.5A Id rating and 30V Vdss. On-resistance is 8.9mOhm, superior to the original specification. This device is ROHS3 compliant and Active status. Package is 8-SOP, which is mechanically compatible with 8-SOIC footprints in most applications. Gate charge of 28nC is comparable to substitute alternatives.

Tier 2 - Functional Equivalents (Acceptable for Most Applications):

FDS6690A (onsemi PowerTrench®) meets the 30V/11A specification with 12.5mOhm on-resistance. This device is ROHS3 compliant and Active status with high inventory availability (39,900 units). Gate charge is reduced to 16nC, providing improved switching performance. Package is 8-SOIC, ensuring direct mechanical compatibility.

DMN3016LSS-13 (Diodes Incorporated) provides 30V/10.3A rating with 12mOhm on-resistance. This device is ROHS3 compliant and Active status. Gate charge of 25.1nC is favorable for switching applications. Continuous drain current is slightly below the original 12A specification but remains suitable for applications with moderate current headroom.

FDS8878 (Fairchild Semiconductor PowerTrench®) offers 30V/10.2A rating with 14mOhm on-resistance. This device is Active status with 32,800 units in inventory. Package is 8-SOIC. Gate charge of 26nC is comparable to other substitutes.

Tier 3 - Higher Voltage Alternative:

FDS4672A (onsemi PowerTrench®) provides 40V Vdss with 11A Id rating. This device is suitable for applications requiring higher voltage margin. On-resistance is 13mOhm at 4.5V gate drive. Product status is Active with ROHS3 compliance. Note: Gate charge specification is at 4.5V rather than 10V, and maximum gate voltage is ±12V versus ±20V for the original device. This part is appropriate only when higher voltage rating is required.

Selection Criteria by Application:

Thermal-Constrained Applications: SI4874BDY-T1-E3 or RSS125N03TB (lowest on-resistance)
High-Speed Switching: FDS6690A (lowest gate charge at 16nC)
Supply Chain Continuity: FDS6690A (highest inventory: 39,900 units)
Regulatory Compliance: All Tier 1 and Tier 2 options are ROHS3 compliant
Cost Optimization: DMN3016LSS-13 or FDS8878 (established alternatives with active production)

Frequently Asked Questions (FAQ)

Q1: Can I use RSS100N03TB or RSS125N03TB as substitutes for the IRF7413ATR?

A: RSS125N03TB is acceptable as a substitute. It provides 12.5A continuous drain current at 30V, exceeding the original 12A specification, with superior on-resistance (8.9mOhm). The 8-SOP package is mechanically compatible with 8-SOIC footprints. RSS100N03TB provides only 10A, which falls below the original 12A specification and is not recommended as a direct substitute.

Q2: What is the difference between 8-SOIC and 8-SOP packages?

A: Both 8-SOIC and 8-SOP are surface mount packages with identical 0.154" (3.90mm) width and pin pitch. The primary difference is in body height and lead configuration. In most PCB designs, these packages are mechanically interchangeable. Verify footprint compatibility with your specific PCB layout before implementation.

Q3: Why does FDS4672A have a 40V rating instead of 30V?

A: FDS4672A is rated for 40V Vdss, providing higher voltage margin than the original 30V specification. This device is suitable for applications where higher voltage headroom is beneficial. However, the continuous drain current is 11A (versus 12A), and maximum gate voltage is ±12V (versus ±20V). Use this device only when the higher voltage rating is required for your application.

Q4: What does "ROHS3 Compliant" mean, and why is it important?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the device meets European Union environmental regulations restricting hazardous materials including lead, cadmium, and mercury. ROHS3 compliance is mandatory for products sold in the EU and increasingly required by global customers. The original IRF7413ATR is RoHS non-compliant; all recommended substitutes are ROHS3 compliant, ensuring regulatory compliance for new designs.

Q5: How do I select between multiple substitute options?

A: Selection depends on application priorities: (1) For thermal performance, choose SI4874BDY-T1-E3 or RSS125N03TB (lowest on-resistance). (2) For switching speed, choose FDS6690A (lowest gate charge). (3) For supply availability, choose FDS6690A (39,900 units in stock). (4) For cost, evaluate DMN3016LSS-13 or FDS8878. All Tier 1 and Tier 2 options are electrically compatible with the original design.

Q6: What is gate charge (Qg), and why does it matter?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching transitions. The original IRF7413ATR has 79nC gate charge; most substitutes range from 14nC to 49nC. Lower gate charge improves efficiency in high-frequency switching applications but requires adequate gate drive capability.

Q7: Can I use a substitute with lower continuous drain current rating?

A: No. The substitute must equal or exceed the original 12A continuous drain current specification. Using a device with lower current rating (such as RSS100N03TB at 10A) risks thermal stress and potential device failure under full-load conditions. DMN3016LSS-13 at 10.3A is marginal and should be used only with design margin verification.

Q8: What is on-resistance (Rds On), and how does it affect performance?

A: On-resistance is the resistance between drain and source when the MOSFET is fully conducting. Lower on-resistance reduces power dissipation and heat generation. The original IRF7413ATR specifies 13.5mOhm. Substitutes with lower on-resistance (such as SI4874BDY-T1-E3 at 7mOhm) improve thermal performance and efficiency. Higher on-resistance increases power dissipation and may require thermal design adjustments.

Q9: Is the IRF7413ATR still available for purchase?

A: The IRF7413ATR is classified as obsolete. While 792 units are reported in stock, long-term availability is not guaranteed. Transition to an active substitute part is recommended for new designs and ongoing production to ensure supply chain continuity.

Q10: Do all substitutes have the same gate threshold voltage (Vgs(th))?

A: No. The original IRF7413ATR has Vgs(th) of 1V @ 250µA, which is unusually low. Substitutes range from 2V to 3V. This difference may affect gate drive circuit design if the original circuit was optimized for the 1V threshold. Verify gate drive voltage compatibility with your specific circuit before implementation. Most modern gate drivers accommodate this range without modification.

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