IRF740LCSTRR Equivalent & Substitute Parts

Part Overview

The IRF740LCSTRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage and 10A continuous drain current at 25°C. The device is packaged in a surface mount TO-263 (D2PAK) configuration and is currently in active product status with 1100 pieces in stock. This component is suitable for high-voltage switching applications requiring compact surface mount integration. Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, accounting for differences in packaging, current rating, and thermal characteristics.

Substiute Parts

IRF740LCSTRR
Vishay SiliconixIn Stock: 1141IRF740LCSTRR Datasheet
IRF740LCSTRR
Current Part
FQP11N40C
onsemiIn Stock: 20567FQP11N40C Datasheet
FQP11N40C
MFR Recommended
IXFA12N50P
IXYSIn Stock: 1158IXFA12N50P Datasheet
IXFA12N50P
MFR Recommended
STP11NK40Z
STMicroelectronicsIn Stock: 20302STP11NK40Z Datasheet
STP11NK40Z
MFR Recommended
STP7NK40Z
STMicroelectronicsIn Stock: 8094STP7NK40Z Datasheet
STP7NK40Z
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 400 V
Continuous Drain Current (Id) @ 25°C 10 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 550 mOhm @ 6A, 10V mOhm
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount TO-263 (D2PAK)
FET Type N-Channel MOSFET

Substitute Part Grouping Explanation

Substitution of the IRF740LCSTRR is determined by electrical equivalence across the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), gate threshold voltage (Vgs(th)), on-state resistance (Rds On), and gate charge (Qg). All substitute parts maintain N-Channel MOSFET technology with identical operating temperature range (-55°C to 150°C).

The substitute parts are grouped into two categories based on mounting type:

Surface Mount Substitutes (Same Mounting Type): Parts maintaining TO-263 surface mount packaging with equivalent or superior electrical performance.

Through Hole Substitutes (Alternative Mounting Type): Parts with TO-220 through hole packaging, suitable for applications where board-level integration differs from the original surface mount requirement.

All substitutes operate within the ±30V gate voltage specification and maintain compatibility with 10V drive voltage applications. Electrical parameters including Rds On, gate charge, and input capacitance are within acceptable ranges for functional equivalence.

Parameter Comparison

Parameter IRF740LCSTRR (Main) IXFA12N50P FQP11N40C STP11NK40Z STP7NK40Z
Manufacturer Vishay Siliconix IXYS onsemi STMicroelectronics STMicroelectronics
Vdss (V) 400 500 400 400 400
Id @ 25°C (A) 10 12 10.5 9 5.4
Rds On (Max) @ 10V (mOhm) 550 @ 6A 500 @ 6A 530 @ 5.25A 550 @ 4.5A 1000 @ 2.7A
Vgs(th) (Max) (V) 4 @ 250µA 5.5 @ 1mA 4 @ 250µA 4.5 @ 100µA 4.5 @ 50µA
Gate Charge Qg (Max) (nC) 39 @ 10V 29 @ 10V 35 @ 10V 32 @ 10V 26 @ 10V
Ciss (Max) (pF) 1100 @ 25V 1830 @ 25V 1090 @ 25V 930 @ 25V 535 @ 25V
Vgs (Max) (V) ±30 ±30 ±30 ±30 ±30
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Mounting Type Surface Mount Surface Mount Through Hole Through Hole Through Hole
Package TO-263 (D2PAK) TO-263AA (IXFA) TO-220-3 TO-220 TO-220
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active Active

Engineering Selection Recommendations

IXFA12N50P (Surface Mount, Direct Package Compatibility): This part maintains surface mount TO-263 packaging identical to the IRF740LCSTRR, enabling direct board-level substitution without layout modification. The IXFA12N50P provides superior electrical performance with 12A continuous drain current, 500V Vdss rating, and lower gate charge (29 nC versus 39 nC). On-state resistance is reduced to 500 mOhm at 6A, improving efficiency. The part is ROHS3 compliant and REACH unaffected, addressing regulatory requirements where the original part does not comply. This substitute is optimal for applications requiring surface mount integration with enhanced performance margins.

FQP11N40C (Through Hole, Equivalent Voltage Rating): This onsemi QFET® device maintains the 400V Vdss rating with 10.5A continuous drain current, providing functional equivalence to the IRF740LCSTRR. The TO-220-3 through hole package requires board redesign but offers superior thermal management through direct heatsink mounting. On-state resistance of 530 mOhm at 5.25A and gate charge of 35 nC provide performance within acceptable ranges. ROHS3 compliance is achieved. This substitute is suitable for applications where through hole mounting is preferred or where thermal dissipation requirements exceed surface mount capabilities.

STP11NK40Z (Through Hole, Matched Voltage and Current Range): This STMicroelectronics SuperMESH™ device maintains 400V Vdss with 9A continuous drain current, providing near-equivalent performance to the IRF740LCSTRR. Gate charge of 32 nC and on-state resistance of 550 mOhm at 4.5A are within acceptable operating ranges. The TO-220 through hole package enables direct heatsink mounting. ROHS3 compliance and REACH unaffected status are confirmed. This substitute is applicable where through hole integration is required with performance characteristics closely matching the original specification.

STP7NK40Z (Through Hole, Reduced Current Rating): This STMicroelectronics SuperMESH™ device is rated for 5.4A continuous drain current at 400V Vdss, representing a reduced current capability compared to the IRF740LCSTRR. This part is suitable only for applications where the 10A rating of the original part exceeds system requirements. Gate charge of 26 nC and input capacitance of 535 pF provide improved switching characteristics. ROHS3 compliance is confirmed. This substitute is applicable for current-limited applications where thermal and electrical margins can accommodate the lower current rating.

All substitute parts maintain active product status and are available in production quantities. Selection should be based on specific application requirements regarding mounting type, current capacity, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXFA12N50P directly replace the IRF740LCSTRR without PCB modification?

A: Yes. The IXFA12N50P is packaged in TO-263AA (IXFA), which is mechanically and electrically compatible with the TO-263 (D2PAK) footprint of the IRF740LCSTRR. Both are surface mount devices with identical pin configurations. No PCB layout changes are required.

Q: What is the primary difference between surface mount and through hole substitute options?

A: Surface mount substitutes (IXFA12N50P) maintain the original TO-263 packaging and require no board redesign. Through hole substitutes (FQP11N40C, STP11NK40Z, STP7NK40Z) use TO-220 packaging, requiring PCB footprint modification but offering superior thermal management through direct heatsink attachment.

Q: Is the IRF740LCSTRR RoHS compliant?

A: No. The IRF740LCSTRR is RoHS non-compliant. All substitute parts listed (IXFA12N50P, FQP11N40C, STP11NK40Z, STP7NK40Z) are ROHS3 compliant, addressing regulatory requirements for new designs or applications requiring RoHS certification.

Q: Which substitute part provides the best electrical performance?

A: The IXFA12N50P offers superior performance with 12A continuous drain current, 500V Vdss rating, and reduced gate charge of 29 nC. It maintains surface mount packaging while providing enhanced current capacity and lower on-state resistance of 500 mOhm at 6A.

Q: Can the STP7NK40Z be used in all applications where the IRF740LCSTRR is specified?

A: No. The STP7NK40Z is rated for 5.4A continuous drain current, which is significantly lower than the IRF740LCSTRR's 10A rating. This part is suitable only for applications where the original 10A specification exceeds actual system requirements.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (IXFA12N50P at 29 nC) enables faster switching and reduces driver power dissipation. Higher gate charge (IRF740LCSTRR at 39 nC) requires more driver current but may provide improved noise immunity in certain applications.

Q: Are all substitute parts available in production quantities?

A: Yes. All substitute parts listed maintain active product status with confirmed inventory: IXFA12N50P (1139 pcs), FQP11N40C (20460 pcs), STP11NK40Z (20200 pcs), and STP7NK40Z (8042 pcs).

Q: What is the impact of different Vdss ratings on substitution?

A: The IXFA12N50P is rated for 500V Vdss compared to the IRF740LCSTRR's 400V. This higher rating provides additional voltage margin and is fully compatible with 400V applications. The other substitutes maintain the 400V rating, providing direct electrical equivalence.

Q: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transients. The IXFA12N50P has higher Ciss (1830 pF) requiring stronger gate drive, while STP7NK40Z has lower Ciss (535 pF) requiring less drive current. The IRF740LCSTRR at 1100 pF falls within the mid-range.

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