IRF740A N-Channel MOSFET 400V 10A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF740A is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 400V drain-to-source voltage with 10A continuous drain current at 25°C. The device is housed in a Through Hole TO-220AB package and dissipates up to 125W at the case temperature. The IRF740A is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Substiute Parts

IRF740A
Vishay SiliconixIn Stock: 1437IRF740A Datasheet
IRF740A
Current Part
IRF740APBF
Vishay SiliconixIn Stock: 7479IRF740APBF Datasheet
IRF740APBF
Direct
IRF740APBF-BE3
Vishay SiliconixIn Stock: 2562IRF740APBF-BE3 Datasheet
IRF740APBF-BE3
Parametric Equivalent
FDP12N50NZ
onsemiIn Stock: 2155FDP12N50NZ Datasheet
FDP12N50NZ
MFR Recommended
FQP11N40C
onsemiIn Stock: 20567FQP11N40C Datasheet
FQP11N40C
MFR Recommended
STP11NK40Z
STMicroelectronicsIn Stock: 20302STP11NK40Z Datasheet
STP11NK40Z
MFR Recommended
STP7NK40Z
STMicroelectronicsIn Stock: 8094STP7NK40Z Datasheet
STP7NK40Z
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Continuous Drain Current (Id) @ 25°C 10 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 550 mOhm @ 6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 36 nC @ 10V
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ Vds 1030 pF @ 25V
Power Dissipation (Max) 125 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the IRF740A is determined by strict equivalence or superiority across the following critical parameters:

Mandatory Matching Parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V minimum
  • Continuous Drain Current (Id) @ 25°C: 10A minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 compatible

Electrical Performance Parameters:

  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 550mOhm or lower
  • Gate Threshold Voltage (Vgs(th)): 4V or lower
  • Gate Charge (Qg): 36nC or lower
  • Maximum Gate Voltage (Vgs): ±30V minimum
  • Input Capacitance (Ciss): 1030pF or lower
  • Power Dissipation (Max): 125W or higher
  • Operating Temperature Range: -55°C to 150°C

Substitute parts are grouped into three categories:

Direct Equivalents (Vishay Siliconix IRF740 Series): Identical electrical specifications with active product status and improved compliance certifications.

Parametric Equivalents (onsemi and STMicroelectronics): Parts meeting or exceeding all mandatory parameters with comparable or superior electrical performance characteristics.

Functional Alternatives: Parts with higher voltage or current ratings that operate within the IRF740A application envelope.

Parameter Comparison

Parameter IRF740A IRF740APBF IRF740APBF-BE3 FQP11N40C STP11NK40Z FDP12N50NZ
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix onsemi STMicroelectronics onsemi
Product Status Obsolete Active Active Active Active Obsolete
Vdss (V) 400 400 400 400 400 500
Id @ 25°C (A) 10 10 10 10.5 9 11.5
Rds On (Max) @ 10V (mOhm) 550 550 550 530 550 520
Vgs(th) (V) 4 4 4 4 4.5 5
Gate Charge Qg (nC) 36 36 36 35 32 30
Vgs (Max) (V) ±30 ±30 ±30 ±30 ±30 ±25
Ciss (pF) 1030 1030 1030 1090 930 1235
Power Dissipation (W) 125 125 125 135 110 170
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Inventory Status 1390 Pcs 7458 Pcs 2478 Pcs 20460 Pcs 20200 Pcs 2100 Pcs

Engineering Selection Recommendations

Primary Recommendation: IRF740APBF or IRF740APBF-BE3

The IRF740APBF and IRF740APBF-BE3 are direct electrical equivalents of the IRF740A manufactured by Vishay Siliconix. Both parts maintain identical electrical specifications including Vdss, Id, Rds On, gate charge, and power dissipation. Both are classified as Active products with ROHS3 compliance, addressing the obsolescence status of the original IRF740A. The IRF740APBF is available in higher inventory (7458 units) and carries REACH Affected status. The IRF740APBF-BE3 is available with 2478 units and carries Vendor Undefined REACH status. These parts are pin-compatible and require no circuit modifications.

Secondary Recommendation: FQP11N40C

The FQP11N40C manufactured by onsemi is an Active product with parametric equivalence to the IRF740A. It provides 10.5A continuous drain current (exceeding the 10A requirement), 400V Vdss, and 135W power dissipation. The Rds On of 530mOhm is superior to the IRF740A specification of 550mOhm. Gate charge is 35nC, slightly lower than the IRF740A. The FQP11N40C carries ROHS3 compliance and REACH Unaffected status. Inventory availability is substantial at 20460 units. This part is suitable for applications where slightly higher current capability is acceptable.

Tertiary Recommendation: STP11NK40Z

The STP11NK40Z manufactured by STMicroelectronics is an Active product with 400V Vdss and 9A continuous drain current. While the current rating is slightly below the IRF740A specification, the Rds On of 550mOhm matches the original part. Gate charge is 32nC, lower than the IRF740A. Input capacitance is 930pF, lower than the IRF740A specification. Power dissipation is 110W, below the IRF740A rating. This part is suitable for applications where the 9A current rating is sufficient. ROHS3 compliance and REACH Unaffected status are confirmed. Inventory is available at 20200 units.

Alternative Consideration: FDP12N50NZ

The FDP12N50NZ manufactured by onsemi provides higher voltage (500V Vdss) and higher current (11.5A) ratings with 170W power dissipation. This part is classified as Obsolete. While it exceeds the IRF740A electrical specifications, its obsolete status makes it unsuitable for long-term supply assurance. This part should be considered only when higher voltage or current margins are required and supply continuity is not a concern.

Compliance and Supply Considerations:

All recommended Active substitutes (IRF740APBF, IRF740APBF-BE3, FQP11N40C, STP11NK40Z) carry ROHS3 compliance certification, addressing regulatory requirements for new designs. The IRF740A is RoHS non-compliant. Inventory availability is highest for FQP11N40C (20460 units) and STP11NK40Z (20200 units), providing superior supply assurance. The IRF740APBF series maintains the original manufacturer lineage, reducing design risk for direct replacement applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF740APBF directly replace the IRF740A without circuit modifications?

A: Yes. The IRF740APBF is electrically and mechanically identical to the IRF740A. All electrical parameters including Vdss, Id, Rds On, gate charge, and power dissipation are identical. The TO-220-3 package pinout is unchanged. No circuit modifications are required.

Q: What is the primary reason for substituting the IRF740A?

A: The IRF740A is classified as Obsolete. Substitute parts are necessary to ensure continued supply availability for new designs and production. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Q: Is the FQP11N40C suitable for applications designed for the IRF740A?

A: Yes. The FQP11N40C meets or exceeds all mandatory electrical parameters of the IRF740A. It provides 10.5A continuous drain current (versus 10A), 400V Vdss, and superior Rds On performance at 530mOhm. The part is pin-compatible in the TO-220-3 package. Applications designed for the IRF740A operate within the FQP11N40C electrical envelope.

Q: Why does the STP11NK40Z have a lower current rating (9A) than the IRF740A (10A)?

A: The STP11NK40Z is rated for 9A continuous drain current at 25°C case temperature, which is below the IRF740A specification of 10A. This part is suitable for applications where the required drain current does not exceed 9A. For applications requiring the full 10A capability, the FQP11N40C or IRF740APBF series are recommended.

Q: What is the difference between IRF740APBF and IRF740APBF-BE3?

A: Both parts are electrically identical with identical electrical specifications and Active product status. The IRF740APBF carries REACH Affected status with higher inventory (7458 units). The IRF740APBF-BE3 carries Vendor Undefined REACH status with lower inventory (2478 units). Selection between these parts depends on REACH compliance requirements and supply availability for specific applications.

Q: Are all substitute parts RoHS compliant?

A: All recommended Active substitute parts (IRF740APBF, IRF740APBF-BE3, FQP11N40C, STP11NK40Z) carry ROHS3 compliance certification. The original IRF740A is RoHS non-compliant. This compliance improvement is a significant advantage for new designs subject to RoHS regulations.

Q: Can the FDP12N50NZ be used as a substitute despite its Obsolete status?

A: The FDP12N50NZ exceeds the IRF740A electrical specifications with 500V Vdss and 11.5A current rating. However, its Obsolete classification indicates limited supply availability and no long-term manufacturer support. This part should be used only in applications where higher voltage or current margins are critical and supply continuity is not a concern. For standard applications, Active alternatives are strongly preferred.

Q: What is the significance of Gate Charge (Qg) in MOSFET substitution?

A: Gate charge determines the switching speed and gate drive requirements. Lower gate charge enables faster switching and reduces gate drive power consumption. The IRF740A specifies 36nC at 10V. Substitute parts with lower gate charge (STP11NK40Z at 32nC, FDP12N50NZ at 30nC) provide improved switching performance. Substitute parts with equal or slightly higher gate charge (FQP11N40C at 35nC) maintain equivalent switching characteristics.

Q: How does Input Capacitance (Ciss) affect MOSFET performance?

A: Input capacitance affects gate drive circuit design and switching speed. Lower input capacitance reduces gate drive power requirements and enables faster switching transitions. The IRF740A specifies 1030pF at 25V. The STP11NK40Z provides lower input capacitance at 930pF, while the FDP12N50NZ specifies higher capacitance at 1235pF. For applications with stringent switching speed requirements, lower input capacitance is advantageous.

Q: What packaging considerations apply to these substitute parts?

A: All substitute parts are housed in the TO-220-3 package, identical to the IRF740A. This package is a Through Hole device with three leads (Gate, Drain, Source) and a mounting tab for thermal management. Pin assignments are standardized across all recommended substitutes. PCB layouts designed for the IRF740A accommodate all substitute parts without modification.

Q: Which substitute part offers the best inventory availability?

A: The FQP11N40C offers the highest inventory availability at 20460 units, followed closely by the STP11NK40Z at 20200 units. The IRF740APBF provides 7458 units. These high inventory levels ensure supply continuity for production requirements. The IRF740A itself has limited inventory at 1390 units, reinforcing the need for substitution.

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