IRF7403TRPBF N-Channel 30V 8.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7403TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.5A continuous drain current at 25°C. This device is packaged in 8-SO surface mount configuration and belongs to the HEXFET® series. The part is classified as "Not For New Designs," indicating it has reached end-of-life status. This obsolescence necessitates identification of functionally equivalent substitute components that maintain electrical and mechanical compatibility for existing applications and redesigns.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8.5	A (Ta)
On-Resistance (Rds On) @ 4A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 10V	57	nC
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF7403TRPBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: 8-SOIC (0.154", 3.90mm Width) surface mount
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance

Performance Parameters (allowable variance):

Continuous Drain Current (Id): 6.4A to 12A acceptable range
On-Resistance (Rds On): 18.5mOhm to 24mOhm acceptable range
Gate Threshold Voltage (Vgs(th)): 1V to 3V acceptable range
Gate Charge (Qg): 4.6nC to 57nC acceptable range
Power Dissipation: 1.3W to 2.5W acceptable range

All identified substitute parts meet or exceed the electrical specifications of the IRF7403TRPBF while maintaining identical package geometry and environmental compliance requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Status
IRF7403TRPBF	Infineon	30	8.5 (Ta)	22 @ 4A, 10V	1 @ 250µA	57 @ 10V	2.5 (Ta)	Not For New Designs
DMG4496SSSQ-13	Diodes Inc.	30	10 (Ta)	21.5 @ 10A, 10V	2 @ 250µA	10.2 @ 10V	1.42 (Ta)	Active
DMN3018SSS-13	Diodes Inc.	30	7.3 (Ta)	21 @ 10A, 10V	2.1 @ 250µA	13.2 @ 10V	1.4 (Ta)	Active
DMN3024LSS-13	Diodes Inc.	30	6.4 (Ta)	24 @ 7A, 10V	3 @ 250µA	12.9 @ 10V	1.6 (Ta)	Active
FDS8884	onsemi	30	8.5 (Ta)	23 @ 8.5A, 10V	2.5 @ 250µA	13 @ 10V	2.5 (Ta)	Active
SI4176DY-T1-E3	Vishay Siliconix	30	12 (Tc)	20 @ 8.3A, 10V	2.2 @ 250µA	15 @ 10V	2.4 (Ta)	Active
SI4800BDY-T1-GE3	Vishay Siliconix	30	6.5 (Ta)	18.5 @ 9A, 10V	1.8 @ 250µA	13 @ 5V	1.3 (Ta)	Active
STS10N3LH5	STMicroelectronics	30	10 (Tc)	21 @ 5A, 10V	1 @ 250µA	4.6 @ 5V	2.5 (Tc)	Not For New Designs

Engineering Selection Recommendations

Primary Substitute (Direct Replacement): FDS8884 (onsemi) is the optimal substitute for the IRF7403TRPBF. Both devices share identical electrical specifications: 30V Vdss, 8.5A continuous drain current, and 2.5W power dissipation. The FDS8884 maintains equivalent on-resistance performance (23mOhm vs. 22mOhm) and operates across the same temperature range (-55°C to 150°C). The FDS8884 holds Active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and supply chain stability.

Secondary Substitutes (Performance-Equivalent): DMG4496SSSQ-13 (Diodes Incorporated) provides enhanced current capability (10A vs. 8.5A) while maintaining 30V Vdss rating. This part is AEC-Q101 qualified for automotive applications and offers improved thermal performance (1.42W vs. 2.5W). The lower gate charge (10.2nC vs. 57nC) reduces switching losses in high-frequency applications.

SI4176DY-T1-E3 (Vishay Siliconix) offers the highest current rating (12A) among substitutes with superior on-resistance (20mOhm). This TrenchFET® device is suitable for applications requiring higher current headroom or lower conduction losses.

Alternative Substitutes (Current-Reduced): DMN3018SSS-13 and DMN3024LSS-13 (Diodes Incorporated) are suitable for applications where the full 8.5A current is not required. Both maintain 30V Vdss and 8-SOIC packaging with Active product status.

SI4800BDY-T1-GE3 (Vishay Siliconix) provides the lowest on-resistance (18.5mOhm) and power dissipation (1.3W) among all substitutes, beneficial for efficiency-critical applications with reduced current requirements (6.5A).

Compatibility Note: STS10N3LH5 (STMicroelectronics) shares identical package and voltage specifications but carries "Not For New Designs" status, limiting its suitability for new product development despite technical equivalence.

Frequently Asked Questions (FAQ)

Q: Can FDS8884 be used as a direct drop-in replacement for IRF7403TRPBF? A: Yes. Both devices feature identical 30V Vdss, 8.5A continuous drain current, 2.5W power dissipation, and 8-SOIC package geometry. Electrical performance is equivalent, permitting direct substitution without circuit modification.

Q: What is the primary advantage of DMG4496SSSQ-13 over the original IRF7403TRPBF? A: DMG4496SSSQ-13 provides 10A continuous drain current (versus 8.5A), lower power dissipation (1.42W versus 2.5W), and AEC-Q101 automotive qualification. These characteristics make it suitable for applications requiring higher current capacity or improved thermal performance.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All identified substitute parts maintain ROHS3 compliance, ensuring compatibility with environmental and regulatory requirements equivalent to the original IRF7403TRPBF.

Q: Does package geometry differ among substitute parts? A: No. All substitute parts utilize the 8-SOIC (0.154", 3.90mm Width) surface mount package, ensuring mechanical compatibility with existing PCB layouts and assembly processes.

Q: Which substitute offers the lowest on-resistance? A: SI4800BDY-T1-GE3 provides the lowest on-resistance at 18.5mOhm (measured at 9A, 10V), compared to 22mOhm for the IRF7403TRPBF. This characteristic reduces conduction losses in power-sensitive applications.

Q: Can substitutes with lower current ratings (6.4A, 6.5A, 7.3A) be used in applications requiring 8.5A? A: No. Substitutes with lower current ratings must not be used in applications requiring continuous drain current at or above their rated maximum. Exceeding rated current causes thermal stress and device failure.

Q: What is the significance of gate charge (Qg) differences among substitutes? A: Gate charge affects switching speed and driver power requirements. Lower gate charge (FDS8884: 13nC, STS10N3LH5: 4.6nC) reduces switching losses and simplifies gate driver design compared to the original IRF7403TRPBF (57nC).

Q: Are there moisture sensitivity differences among substitutes? A: All identified substitutes maintain MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions. Storage and handling requirements are equivalent to the original IRF7403TRPBF.

Q: Why is STS10N3LH5 listed despite "Not For New Designs" status? A: STS10N3LH5 is included for reference in applications using existing IRF7403TRPBF inventory. However, for new product development, Active-status alternatives (FDS8884, DMG4496SSSQ-13, SI4176DY-T1-E3) are recommended to ensure long-term supply availability.

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