IRF7403TR N-Channel 30V 8.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7403TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-source voltage with 8.5A continuous drain current at 25°C. This device is classified as Obsolete, indicating it is no longer in active production. The part is housed in an 8-SO surface mount package and features a maximum power dissipation of 2.5W at ambient temperature.

Due to its obsolete status, identifying functionally equivalent substitute parts is essential for design continuity, procurement flexibility, and long-term supply chain management. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating modern packaging and compliance standards.

Substiute Parts

IRF7403TR

Infineon TechnologiesIn Stock: 2299IRF7403TR Datasheet

Current PartRFQ

IRF7403TRPBF

Infineon TechnologiesIn Stock: 7169IRF7403TRPBF Datasheet

DirectRFQ

DMG4496SSSQ-13

Diodes IncorporatedIn Stock: 20248DMG4496SSSQ-13 Datasheet

MFR RecommendedRFQ

DMN3024LSS-13

Diodes IncorporatedIn Stock: 3187DMN3024LSS-13 Datasheet

MFR RecommendedRFQ

FDS8884

onsemiIn Stock: 70235FDS8884 Datasheet

MFR RecommendedRFQ

SI4178DY-T1-E3

Vishay SiliconixIn Stock: 3065SI4178DY-T1-E3 Datasheet

MFR RecommendedRFQ

SI4178DY-T1-GE3

Vishay SiliconixIn Stock: 65233SI4178DY-T1-GE3 Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7403TR are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Compatibility Criteria:

• FET Type: N-Channel (mandatory match)
• Drain to Source Voltage (Vdss): 30V minimum (equal or higher acceptable)
• Continuous Drain Current (Id): 8.5A minimum at rated temperature (equal or higher acceptable)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) or equivalent 8-pin surface mount footprint
• Operating Temperature Range: -55°C to 150°C (minimum requirement)
• Mounting Type: Surface Mount (mandatory match)

Secondary Compatibility Parameters:

• Rds On (Max): 22mOhm or lower at specified conditions (lower values indicate improved performance)
• Gate Charge (Qg): Lower values preferred for faster switching characteristics
• Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements
• Power Dissipation: 2.5W or higher at ambient temperature

Substitute parts meeting these criteria are grouped into two categories: Direct Equivalents (identical electrical specifications) and Functional Equivalents (meeting or exceeding all critical parameters with potential improvements in secondary characteristics).

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalent (Identical Specifications):

IRF7403TRPBF is the direct equivalent of IRF7403TR, maintaining identical electrical specifications including 30V Vdss, 8.5A continuous drain current, 22mOhm Rds On, and 2.5W power dissipation. This part is available in Tape & Reel packaging and carries ROHS3 compliance. However, it is classified as "Not For New Designs," indicating limited future availability. This part is suitable for replacement applications requiring exact specification matching.

Active Production Alternatives (Recommended for New Designs):

FDS8884 (onsemi, Active status) provides direct electrical equivalence with identical 30V/8.5A ratings and 2.5W power dissipation. This part features improved gate charge characteristics (13nC vs. 57nC) and reduced input capacitance (635pF vs. 1200pF), resulting in faster switching performance. ROHS3 compliance and high inventory availability (70,200 units) support long-term supply chain stability.

DMG4496SSSQ-13 (Diodes Incorporated, Active status, AEC-Q101 qualified) exceeds the IRF7403TR specification with 10A continuous drain current and improved Rds On (21.5mOhm). This part is automotive-grade and suitable for applications requiring enhanced reliability margins. Power dissipation is reduced to 1.42W at ambient temperature, indicating superior thermal efficiency.

SI4178DY-T1-GE3 (Vishay Siliconix, Active status) provides the highest current rating at 12A (Tc) with improved Rds On (21mOhm) and significantly reduced gate charge (12nC). This part offers the best thermal performance with 5W power dissipation at case temperature. Input capacitance is substantially lower (405pF), enabling faster gate drive response.

Limited Availability Alternatives:

DMN3024LSS-13 (Diodes Incorporated, Active status) provides 6.4A continuous drain current, which is below the IRF7403TR specification. This part is suitable only for applications where current requirements do not exceed 6.4A.

STS10N3LH5 (STMicroelectronics, Not For New Designs) offers 10A continuous drain current with exceptional gate charge characteristics (4.6nC @ 5V). This part is classified as "Not For New Designs" and should be avoided for new development.

Compliance and Certification Status:

All recommended active production alternatives carry ROHS3 compliance. DMG4496SSSQ-13 includes AEC-Q101 automotive qualification, suitable for automotive and industrial applications requiring enhanced reliability standards. All parts maintain the required -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can IRF7403TRPBF be used as a direct replacement for IRF7403TR?

A: Yes. IRF7403TRPBF is the direct equivalent with identical electrical specifications. Both parts maintain 30V Vdss, 8.5A continuous drain current, 22mOhm Rds On, and 2.5W power dissipation. The primary difference is packaging format (Tape & Reel vs. bulk) and compliance status. IRF7403TRPBF is classified as "Not For New Designs," indicating limited future availability.

Q: What is the primary advantage of FDS8884 over IRF7403TR?

A: FDS8884 maintains identical electrical ratings while offering significantly improved switching characteristics. Gate charge is reduced from 57nC to 13nC, and input capacitance decreases from 1200pF to 635pF. These improvements result in faster switching speed and reduced gate drive power requirements. FDS8884 is in active production with high inventory availability.

Q: Is DMG4496SSSQ-13 suitable for applications requiring 8.5A continuous current?

A: Yes. DMG4496SSSQ-13 is rated for 10A continuous drain current, exceeding the IRF7403TR requirement of 8.5A. This provides a 17.6% current margin. The part also features improved Rds On (21.5mOhm vs. 22mOhm) and reduced power dissipation (1.42W vs. 2.5W at ambient temperature). AEC-Q101 automotive qualification provides additional reliability assurance.

Q: Can SI4178DY-T1-GE3 be used in place of IRF7403TR?

A: Yes, with performance enhancement. SI4178DY-T1-GE3 exceeds all critical specifications: 12A continuous drain current (vs. 8.5A), 21mOhm Rds On (vs. 22mOhm), and 5W power dissipation at case temperature (vs. 2.5W at ambient). Gate charge is substantially lower (12nC vs. 57nC), enabling faster switching. This part is suitable for applications where improved thermal performance and switching speed are beneficial.

Q: Is DMN3024LSS-13 a suitable substitute for IRF7403TR?

A: DMN3024LSS-13 is not recommended as a direct substitute. This part is rated for only 6.4A continuous drain current, which is 24.7% below the IRF7403TR specification of 8.5A. Use this part only in applications where maximum current requirements do not exceed 6.4A.

Q: What is the significance of the "Not For New Designs" status?

A: "Not For New Designs" indicates that the manufacturer is discontinuing the part and will not support new product development. While existing inventory may be available, future procurement cannot be guaranteed. For new designs, select parts with "Active" status such as FDS8884, DMG4496SSSQ-13, or SI4178DY-T1-GE3.

Q: Are all substitute parts compatible with the 8-SOIC footprint?

A: Yes. All substitute parts listed are housed in 8-SOIC (0.154", 3.90mm Width) packages, ensuring mechanical and electrical compatibility with existing PCB layouts designed for IRF7403TR. No PCB redesign is required for footprint accommodation.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) power dissipation ratings?

A: Ta (ambient temperature) ratings assume power dissipation measured at 25°C ambient conditions without active cooling. Tc (case temperature) ratings assume measurement at the device case temperature, typically under active thermal management. SI4178DY-T1-GE3 specifies both: 2.4W (Ta) and 5W (Tc), indicating superior thermal performance under controlled cooling conditions.

Q: Which substitute part offers the best thermal performance?

A: SI4178DY-T1-GE3 provides the best thermal performance with 5W power dissipation at case temperature, compared to 2.5W for IRF7403TR at ambient temperature. This represents a 100% improvement in thermal capacity under active cooling. DMG4496SSSQ-13 offers the lowest ambient temperature power dissipation at 1.42W, indicating superior efficiency.

Q: Can these parts be used interchangeably in existing designs without circuit modification?

A: Yes, for applications where current requirements do not exceed 8.5A. All substitute parts maintain 30V Vdss, 8-SOIC packaging, and -55°C to 150°C operating temperature range. However, verify that gate drive circuitry can accommodate the reduced gate charge of active production alternatives (13nC for FDS8884 vs. 57nC for IRF7403TR), which may require gate resistor adjustment for optimal switching performance.