IRF7403PBF N-Channel 30V 8.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7403PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.5A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7403PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF7403PBF
Infineon TechnologiesIn Stock: 5548IRF7403PBF Datasheet
IRF7403PBF
Current Part
DMG4496SSSQ-13
Diodes IncorporatedIn Stock: 20248DMG4496SSSQ-13 Datasheet
DMG4496SSSQ-13
MFR Recommended
DMN3018SSS-13
Diodes IncorporatedIn Stock: 17671DMN3018SSS-13 Datasheet
DMN3018SSS-13
MFR Recommended
DMN3024LSS-13
Diodes IncorporatedIn Stock: 3187DMN3024LSS-13 Datasheet
DMN3024LSS-13
MFR Recommended
FDS8884
onsemiIn Stock: 70235FDS8884 Datasheet
FDS8884
MFR Recommended
STS10N3LH5
STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet
STS10N3LH5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 8.5 A
Rds On (Max) @ 4A, 10V 22 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 V
Gate Charge (Qg) @ 10V 57 nC
Input Capacitance (Ciss) @ 25V 1200 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7403PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must be 30V
  • Continuous Drain Current (Id): Must support minimum 8.5A at 25°C
  • Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
  • FET Type: N-Channel MOSFET technology
  • Operating Temperature Range: Must support -55°C to 150°C
  • RoHS3 Compliance: Required for regulatory alignment

Substitution Logic: All identified substitute parts maintain the 30V Vdss rating and 8-SOIC package footprint. Drain current ratings range from 6.4A to 10A, encompassing the 8.5A requirement of the original part. On-resistance (Rds On) values remain within acceptable engineering tolerances (21 to 24 mOhm at 10V). All substitutes operate across the full -55°C to 150°C temperature range and maintain RoHS3 compliance.

Parameter Comparison

Parameter IRF7403PBF DMG4496SSSQ-13 DMN3018SSS-13 DMN3024LSS-13 FDS8884 STS10N3LH5
Manufacturer Infineon Diodes Inc. Diodes Inc. Diodes Inc. onsemi STMicroelectronics
Vdss (V) 30 30 30 30 30 30
Id @ 25°C (A) 8.5 10 7.3 6.4 8.5 10
Rds On (Max) @ 10V (mOhm) 22 @ 4A 21.5 @ 10A 21 @ 10A 24 @ 7A 23 @ 8.5A 21 @ 5A
Vgs(th) @ 250µA (V) 1 2 2.1 3 2.5 1
Gate Charge @ 10V (nC) 57 10.2 13.2 12.9 13 4.6
Ciss @ 15-25V (pF) 1200 @ 25V 493.5 @ 15V 697 @ 15V 608 @ 15V 635 @ 15V 475 @ 25V
Power Dissipation (Max) (W) 2.5 1.42 1.4 1.6 2.5 2.5
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-SOIC 8-SOP 8-SO 8-SO 8-SOIC 8-SOIC
Product Status Discontinued Active Active Active Active Not For New Designs
RoHS3 Compliance Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

FDS8884 (onsemi) provides the closest electrical match to the IRF7403PBF. Both devices share identical Vdss (30V), Id (8.5A), and power dissipation (2.5W) ratings. The FDS8884 is actively manufactured and maintains full RoHS3 compliance. This part is recommended for direct replacement in new designs and ongoing production.

DMG4496SSSQ-13 (Diodes Incorporated) offers enhanced current capability (10A vs. 8.5A) with improved on-resistance (21.5 mOhm) and reduced gate charge (10.2 nC). This part includes AEC-Q101 automotive qualification and is actively produced. The higher current rating provides design margin for applications requiring sustained performance.

DMN3018SSS-13 (Diodes Incorporated) maintains active production status with 7.3A continuous drain current and 21 mOhm on-resistance. This part is suitable for applications where the 8.5A requirement can be met with slightly lower current margin.

DMN3024LSS-13 (Diodes Incorporated) is actively produced with 6.4A continuous drain current. This part is applicable only to applications where the required drain current does not exceed 6.4A.

Secondary Substitute (Not For New Designs):

STS10N3LH5 (STMicroelectronics) carries a "Not For New Designs" status and should be used only for legacy system maintenance or repair. While electrically compatible with 30V Vdss and 10A Id rating, this part is not recommended for new product development.

Frequently Asked Questions (FAQ)

Q: Can FDS8884 be used as a direct replacement for IRF7403PBF?

A: Yes. Both devices share identical electrical specifications: 30V Vdss, 8.5A continuous drain current, 2.5W power dissipation, and -55°C to 150°C operating range. Both use 8-SOIC packaging and maintain RoHS3 compliance. FDS8884 is actively manufactured, making it the recommended substitute.

Q: What is the difference between 8-SO and 8-SOIC packaging?

A: Both designations refer to 8-pin Small Outline packages with 0.154" (3.90mm) width. These packages are mechanically and electrically compatible for PCB footprint purposes. Verify with your PCB layout tool that the specific pin pitch and body dimensions match your design.

Q: Why does DMG4496SSSQ-13 have lower gate charge than IRF7403PBF?

A: Gate charge (Qg) is determined by the internal capacitance and device geometry. DMG4496SSSQ-13 exhibits 10.2 nC at 10V compared to 57 nC for IRF7403PBF. Lower gate charge results in faster switching transitions and reduced driver power requirements. This is an engineering advantage in high-frequency switching applications.

Q: Can I use DMN3024LSS-13 if my application requires 8.5A continuous current?

A: No. DMN3024LSS-13 is rated for 6.4A continuous drain current at 25°C. Using this part in an 8.5A application would exceed its rated current capacity and result in thermal stress and potential device failure. Select a substitute with Id rating of 8.5A or higher.

Q: Is STS10N3LH5 suitable for new product designs?

A: No. STS10N3LH5 carries a "Not For New Designs" status from STMicroelectronics. This part should be used only for maintenance, repair, or legacy system support. For new designs, select from the actively produced alternatives: FDS8884, DMG4496SSSQ-13, DMN3018SSS-13, or DMN3024LSS-13.

Q: What is the significance of AEC-Q101 qualification on DMG4496SSSQ-13?

A: AEC-Q101 is an automotive industry qualification standard that certifies the device for automotive applications. This qualification indicates the part has undergone rigorous testing for reliability, temperature cycling, and environmental stress. If your application requires automotive-grade components, DMG4496SSSQ-13 is the appropriate choice.

Q: How do I determine which substitute is best for my application?

A: Identify your application's minimum required drain current. If 8.5A is required, use FDS8884 or DMG4496SSSQ-13. If current requirement is lower (6.4A to 7.3A), DMN3024LSS-13 or DMN3018SSS-13 are acceptable. For automotive applications, specify DMG4496SSSQ-13. Verify on-resistance and gate charge specifications match your circuit's switching frequency and driver capabilities.

Request Quote (Ships tomorrow)