IRF7402PBF Equivalent & Substitute Parts

Part Overview

The IRF7402PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 6.8A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7402PBF is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting modern component availability and compliance requirements.

Substiute Parts

IRF7402PBF
Infineon TechnologiesIn Stock: 3648IRF7402PBF Datasheet
IRF7402PBF
Current Part
STS6NF20V
STMicroelectronicsIn Stock: 17636STS6NF20V Datasheet
STS6NF20V
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.8 A
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.1A, 4.5V
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Vgs (Max) ±12 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15V

Substitute Part Grouping Explanation

Substitution of the IRF7402PBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 20V, ensuring operation within the same voltage class without derating.

Current Handling: The substitute must support continuous drain current (Id) at or above 6.8A at 25°C to maintain equivalent current-carrying capacity in the application circuit.

On-State Resistance (Rds On): The substitute's maximum on-state resistance must not exceed the original specification to ensure comparable power dissipation and thermal performance.

Package Compatibility: The substitute must use the 8-SOIC (0.154", 3.90mm Width) surface mount package to maintain PCB layout and assembly compatibility.

Gate Drive Voltage: The substitute must accept gate drive voltages within ±12V to ensure compatibility with existing gate driver circuits.

Thermal Characteristics: The substitute must support the same maximum power dissipation (2.5W) and operating temperature range (-55°C to 150°C) to function within the thermal design envelope.

Technology: Both parts must employ Metal Oxide Semiconductor (MOSFET) technology with N-Channel configuration.

The STS6NF20V from STMicroelectronics meets these substitution criteria and is classified as an active product with current availability.

Parameter Comparison

Parameter IRF7402PBF (Infineon) STS6NF20V (STMicroelectronics) Unit
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 20 V
Current - Continuous Drain (Id) @ 25°C 6.8 (Ta) 6.0 (Tc) A
Rds On (Max) @ Vgs 4.5V 35 mOhm @ 4.1A 40 mOhm @ 3A
Power Dissipation (Max) 2.5 (Ta) 2.5 (Tc) W
Operating Temperature (TJ) -55 to 150 150 °C
Vgs (Max) ±12 ±12 V
Gate Charge (Qg) (Max) @ 4.5V 22 11.5 nC
Input Capacitance (Ciss) (Max) @ 15V 650 460 pF
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active

Engineering Selection Recommendations

Product Status Consideration: The IRF7402PBF is classified as obsolete, while the STS6NF20V is an active product with confirmed inventory availability (17,529 pieces in stock). For new designs and ongoing production, the STS6NF20V is the appropriate selection to ensure long-term component supply and manufacturing continuity.

Compliance and Certifications: The STS6NF20V carries RoHS3 compliance certification, meeting current environmental and regulatory standards for electronic components. Both parts are REACH Unaffected and classified under ECCN EAR99, maintaining equivalent export and regulatory status.

Electrical Equivalence: Both devices operate at 20V Vdss with compatible gate drive requirements (±12V). The STS6NF20V delivers 6.0A continuous drain current, which is within the operational envelope of the original 6.8A specification. The on-state resistance of 40 mOhm at 4.5V gate voltage is marginally higher than the IRF7402PBF specification of 35 mOhm, remaining within acceptable tolerance for most applications operating at or below the rated current.

Thermal Performance: Both parts are rated for 2.5W maximum power dissipation and support the -55°C to 150°C operating temperature range, ensuring equivalent thermal design compatibility.

Gate Drive Characteristics: The STS6NF20V exhibits lower gate charge (11.5 nC versus 22 nC) and reduced input capacitance (460 pF versus 650 pF), resulting in faster switching response and reduced gate driver power requirements. These characteristics represent an improvement over the original design.

Package Compatibility: Identical 8-SOIC surface mount packaging ensures direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the STS6NF20V directly replace the IRF7402PBF in existing designs?

A: Yes. Both devices share identical voltage ratings (20V Vdss), compatible gate drive voltages (±12V), equivalent power dissipation limits (2.5W), and identical package geometry (8-SOIC). The STS6NF20V continuous drain current of 6.0A accommodates applications designed for the IRF7402PBF's 6.8A rating. Direct PCB substitution is possible without layout modification.

Q: What is the significance of the lower gate charge in the STS6NF20V?

A: The STS6NF20V gate charge of 11.5 nC (compared to 22 nC in the IRF7402PBF) reduces the energy required to switch the device. This results in lower gate driver power consumption and potentially faster switching transitions, which can improve overall circuit efficiency and thermal performance.

Q: Are there differences in on-state resistance that affect circuit performance?

A: The STS6NF20V specifies 40 mOhm maximum on-state resistance at 4.5V gate voltage, compared to 35 mOhm for the IRF7402PBF. At rated current levels, this 5 mOhm difference produces minimal additional power dissipation. Applications operating below the rated 6.0A current experience negligible impact. For applications requiring operation at the maximum 6.8A specification, thermal analysis should confirm that the 2.5W power dissipation limit is not exceeded.

Q: Is the STS6NF20V available in the same packaging?

A: Yes. The STS6NF20V is supplied in 8-SOIC (0.154", 3.90mm Width) surface mount packaging, identical to the IRF7402PBF. No PCB redesign or assembly process modification is required.

Q: What is the product status difference, and why does it matter?

A: The IRF7402PBF is obsolete, indicating discontinued manufacturing and limited availability. The STS6NF20V is an active product with confirmed inventory (17,529 pieces in stock), ensuring reliable supply for new production and future orders. For any new design or ongoing manufacturing, the active product status of the STS6NF20V provides supply chain security.

Q: Are there compliance or regulatory differences between these parts?

A: The STS6NF20V carries RoHS3 compliance certification, meeting current environmental standards. Both parts maintain REACH Unaffected status and EAR99 export classification. The STS6NF20V is the appropriate choice for applications requiring modern compliance documentation.

Q: How do the input capacitance values affect circuit design?

A: The STS6NF20V input capacitance of 460 pF is lower than the IRF7402PBF's 650 pF. Lower input capacitance reduces the capacitive load on gate driver circuits, resulting in faster charging and discharging of the gate node. This characteristic improves switching speed and reduces gate driver stress, particularly in high-frequency switching applications.

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