IRF7401PBF N-Channel MOSFET 20V 8.7A Equivalent & Substitute Parts

Part Overview

The IRF7401PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 8.7A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is part of the HEXFET® series. The IRF7401PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF7401PBF

Infineon TechnologiesIn Stock: 1883IRF7401PBF Datasheet

Current PartRFQ

DMN2028USS-13

Diodes IncorporatedIn Stock: 25356DMN2028USS-13 Datasheet

MFR RecommendedRFQ

STS6NF20V

STMicroelectronicsIn Stock: 17636STS6NF20V Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7401PBF are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 20V (exact match required)
• Package Type: 8-SOIC surface mount (mechanical compatibility)
• FET Type: N-Channel MOSFET (functional equivalence)
• Operating Temperature Range: -55°C to 150°C (thermal envelope)
• RoHS3 Compliance: Required for regulatory alignment

Functional Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 6A (operational headroom)
• On-State Resistance (Rds On): Maximum 40mOhm @ 4.5V Vgs (switching performance)
• Gate Charge (Qg): Maximum 48nC @ 4.5V (drive circuit compatibility)
• Gate Threshold Voltage (Vgs(th)): Maximum 1.3V (logic-level compatibility)

The substitute parts listed below meet all critical matching parameters and maintain functional compatibility within the specified electrical envelope.

Parameter Comparison

Engineering Selection Recommendations

DMN2028USS-13 (Diodes Incorporated)

The DMN2028USS-13 is an active product with 25,300 units in stock. This substitute maintains the 20V Vdss rating and 8-SOIC package footprint. The continuous drain current of 7.3A is within 84% of the IRF7401PBF specification. The on-state resistance of 20mOhm at 4.5V Vgs is superior to the original part. Gate charge is significantly reduced to 11.6nC, resulting in lower drive circuit power consumption. This part is suitable for applications where the 7.3A current rating is sufficient and lower gate charge is beneficial.

STS6NF20V (STMicroelectronics)

The STS6NF20V is an active product with 17,529 units in stock, part of the STripFET™ II series. This substitute maintains the 20V Vdss rating and 8-SOIC package footprint. The continuous drain current of 6A represents the minimum acceptable current rating for functional substitution. The on-state resistance of 40mOhm at 4.5V Vgs is higher than the original part, resulting in increased power dissipation in high-current switching applications. Gate charge is reduced to 11.5nC. This part is suitable for applications where the 6A current rating is adequate and thermal management is not a limiting factor.

Both substitute parts carry ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the original part's regulatory and environmental specifications.

Frequently Asked Questions (FAQ)

Q: Can the DMN2028USS-13 directly replace the IRF7401PBF in all applications?

A: The DMN2028USS-13 is mechanically and electrically compatible for applications requiring continuous drain current up to 7.3A. The 20V Vdss rating, 8-SOIC package, and operating temperature range are identical. However, applications designed specifically for the 8.7A rating of the IRF7401PBF may require thermal or circuit redesign with the lower-rated substitute.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRF7401PBF requires 48nC, while both substitutes require approximately 11.6nC. Lower gate charge reduces drive circuit power consumption and allows faster switching speeds with the same gate driver. This is generally beneficial but requires verification that the gate driver can supply the required current at the intended switching frequency.

Q: Is the STS6NF20V suitable for high-current applications?

A: The STS6NF20V is rated for 6A continuous drain current, which is 69% of the IRF7401PBF specification. It is suitable only for applications where the maximum current requirement does not exceed 6A. The higher on-state resistance (40mOhm) generates more heat at equivalent current levels, requiring thermal analysis to ensure junction temperature remains within the -55°C to 150°C operating range.

Q: Are all three parts pin-compatible?

A: Yes. The IRF7401PBF, DMN2028USS-13, and STS6NF20V all use the 8-SOIC package with 0.154" width and 3.90mm body dimensions. Pin assignments for N-Channel MOSFETs in this package are standardized (Gate, Drain, Source configuration), ensuring direct PCB footprint compatibility.

Q: What is the difference between Ta and Tc temperature specifications?

A: Ta refers to ambient temperature, while Tc refers to case temperature. The IRF7401PBF and DMN2028USS-13 specify continuous drain current at Ta (ambient), while the STS6NF20V specifies at Tc (case). For equivalent thermal conditions, the STS6NF20V's 6A rating at case temperature may represent lower actual current capability under typical ambient operating conditions.

Q: Are there inventory considerations for long-term supply?

A: The IRF7401PBF is discontinued and has 1,814 units remaining in stock. The DMN2028USS-13 has 25,300 units available, and the STS6NF20V has 17,529 units available. For new designs or long-term production, selection of an active product (DMN2028USS-13 or STS6NF20V) is recommended to ensure sustained supply chain availability.