IRF7389TR MOSFET N/P-Channel 30V Equivalent & Substitute Parts

Part Overview

The IRF7389TR is an integrated MOSFET array featuring complementary N-channel and P-channel MOSFETs rated for 30V operation in an 8-SOIC surface mount package. Manufactured by Infineon Technologies under the HEXFET® series, this device integrates dual logic-level gate MOSFETs with 2.5W power dissipation capability. The IRF7389TR is classified as obsolete product status, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, on-resistance characteristics, gate threshold voltage, and thermal operating range while accommodating packaging and compliance variations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Rds On (Max) @ Id, Vgs	29 mOhm @ 5.8A, 10V	mOhm
Vgs(th) (Max) @ Id	1 V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 25V	pF
Power - Max	2.5	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	N and P-Channel	—
FET Feature	Logic Level Gate	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7389TR are classified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is determined by the following parameters:

Critical Compatibility Parameters:

Drain to Source Voltage (Vdss): Must equal 30V
Configuration: Must be N and P-Channel complementary pair
FET Feature: Must include Logic Level Gate capability
Package / Case: Must be 8-SOIC form factor (0.154", 3.90mm Width)
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

Rds On characteristics: Acceptable within engineering tolerance for the application
Gate Charge and Input Capacitance: Must not exceed specified maximums
Power dissipation: Must support 2.5W minimum

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications with packaging variations) and functional substitutes (equivalent electrical performance with minor specification differences).

Parameter Comparison

Parameter	IRF7389TR	IRF7389TRPBF	SP8M10FRATB
Manufacturer	Infineon Technologies	Infineon Technologies	Rohm Semiconductor
Product Status	Obsolete	Active	Active
Drain to Source Voltage (Vdss)	30V	30V	30V
Configuration	N and P-Channel	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate, 4V Drive
Rds On (Max) @ Id, Vgs	29 mOhm @ 5.8A, 10V	29 mOhm @ 5.8A, 10V	25 mOhm @ 7A, 10V; 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	1 V @ 250µA	1 V @ 250µA	2.5 V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10V	33 nC @ 10V	8.4 nC @ 5V; 8.5 nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 25V	650 pF @ 25V	600 pF @ 10V; 850 pF @ 10V
Power - Max	2.5W	2.5W	2W (Ta)
Operating Temperature Range	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Packaging Type	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
Qualification	—	—	AEC-Q101 Automotive

Engineering Selection Recommendations

IRF7389TRPBF (Infineon Technologies)

The IRF7389TRPBF is a direct electrical equivalent to the IRF7389TR with identical specifications across all critical parameters: 30V Vdss, 29 mOhm Rds On, 1V Vgs(th), 33 nC gate charge, and 650 pF input capacitance. The primary distinction is product status: IRF7389TRPBF is classified as Active, providing ongoing manufacturing and supply continuity. Packaging differs only in delivery format (Cut Tape & Digi-Reel® versus Tape & Reel), which does not affect electrical performance or PCB assembly compatibility. IRF7389TRPBF carries ROHS3 compliance, addressing regulatory requirements where the original IRF7389TR does not. This part is the preferred direct substitute for applications requiring identical electrical characteristics with active product support.

SP8M10FRATB (Rohm Semiconductor)

The SP8M10FRATB is a functional substitute meeting the core electrical requirements of 30V Vdss, N and P-Channel configuration, and 8-SOIC package form factor. This device demonstrates improved on-resistance characteristics (25 mOhm at 7A, 10V for the N-channel) and significantly reduced gate charge (8.4 nC at 5V) compared to the IRF7389TR. The SP8M10FRATB carries AEC-Q101 automotive qualification and ROHS3 compliance. Differences include higher gate threshold voltage (2.5V @ 1mA versus 1V @ 250µA) and reduced maximum power dissipation (2W Ta versus 2.5W). The SP8M10FRATB is suitable for applications where improved switching performance and automotive-grade reliability are required, provided the higher Vgs(th) and lower power rating are compatible with circuit design parameters.

Frequently Asked Questions (FAQ)

Q: Can IRF7389TRPBF be used as a direct replacement for IRF7389TR in existing designs?

A: Yes. The IRF7389TRPBF is electrically identical to the IRF7389TR across all specified parameters. Packaging format differences (Cut Tape & Digi-Reel® versus Tape & Reel) do not affect PCB assembly or electrical performance. The primary advantage is active product status and ROHS3 compliance.

Q: What are the key differences between IRF7389TR and SP8M10FRATB?

A: Both devices share 30V Vdss rating, N and P-Channel configuration, Logic Level Gate feature, and 8-SOIC package. The SP8M10FRATB offers lower on-resistance (25 mOhm at 7A) and reduced gate charge (8.4 nC), but has higher gate threshold voltage (2.5V versus 1V) and lower power rating (2W versus 2.5W). The SP8M10FRATB includes AEC-Q101 automotive qualification.

Q: Is the 8-SOIC package identical across all three parts?

A: Yes. All three parts use 8-SOIC (0.154", 3.90mm Width) package form factor, ensuring identical PCB footprint and assembly compatibility. Packaging delivery format (Tape & Reel, Cut Tape, or Digi-Reel®) does not affect physical dimensions or electrical characteristics.

Q: Can SP8M10FRATB be used in applications requiring 2.5W power dissipation?

A: The SP8M10FRATB is rated for 2W maximum power dissipation at ambient temperature (Ta), compared to 2.5W for the IRF7389TR. Applications requiring sustained 2.5W dissipation must verify that SP8M10FRATB thermal performance meets design requirements through thermal analysis or testing.

Q: What is the significance of the higher Vgs(th) in SP8M10FRATB?

A: The SP8M10FRATB gate threshold voltage is 2.5V @ 1mA, compared to 1V @ 250µA for the IRF7389TR. This difference affects gate drive requirements and switching behavior. Circuits designed for 1V threshold must verify compatibility with 2.5V threshold before substitution.

Q: Are all three parts RoHS compliant?

A: IRF7389TR is RoHS non-compliant. Both IRF7389TRPBF and SP8M10FRATB are ROHS3 compliant. Applications subject to RoHS regulations must use IRF7389TRPBF or SP8M10FRATB.

Q: Which substitute is recommended for new designs?

A: For new designs requiring direct electrical equivalence to the IRF7389TR, use IRF7389TRPBF. For applications benefiting from improved switching performance and automotive-grade reliability, use SP8M10FRATB, provided circuit design accommodates the higher Vgs(th) and lower power rating.

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