IRF7389PBF Equivalent & Substitute Parts

Part Overview

The IRF7389PBF is a dual N-channel and P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in the 30V class. This device integrates complementary metal-oxide-semiconductor technology in an 8-SOIC package and is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

The part operates across an industrial temperature range of -55°C to 150°C and is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1). Its primary application domain includes logic-level gate-driven switching circuits requiring compact dual-channel integration.

Key Parameters

Parameter	Value	Unit	Specification Basis
Drain to Source Voltage (Vdss)	30	V	Maximum rated voltage
Configuration	N and P-Channel	—	Dual complementary array
Package Type	8-SOIC (0.154", 3.90mm Width)	—	Surface mount form factor
Rds On (Max) @ Id, Vgs	29mOhm @ 5.8A, 10V	Ω	On-state drain resistance
Gate Charge (Qg) @ Vgs	33nC @ 10V	nC	Switching speed indicator
Operating Temperature Range	-55 to 150	°C	Junction temperature limits
Power Dissipation (Max)	2.5	W	Thermal rating
Mounting Type	Surface Mount	—	PCB assembly method
RoHS Status	ROHS3 Compliant	—	Environmental compliance

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7389PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 30V
Configuration: Must be N and P-Channel dual array
Package: Must be 8-SOIC (0.154", 3.90mm Width) or equivalent 8-SO footprint
Operating Temperature Range: Must support -55°C to 150°C minimum
RoHS Compliance: Must maintain ROHS3 status

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values indicate faster switching characteristics
Power Dissipation: Equal or higher ratings ensure thermal compatibility
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for storage flexibility

The two substitute parts identified—DMC3028LSDXQ-13 and SP8M10FRATB—satisfy all primary criteria and maintain full electrical and mechanical compatibility with the IRF7389PBF within the specified parameter envelope.

Parameter Comparison

Parameter	IRF7389PBF (Infineon)	DMC3028LSDXQ-13 (Diodes Inc.)	SP8M10FRATB (Rohm)
Manufacturer	Infineon Technologies	Diodes Incorporated	Rohm Semiconductor
Vdss (V)	30	30	30
Configuration	N and P-Channel	N and P-Channel	N and P-Channel
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)
Rds On (Max) @ 10V	29mOhm @ 5.8A	27mOhm @ 6A	25mOhm @ 7A, 56mOhm @ 4.5A
Gate Charge (Qg) (Max)	33nC @ 10V	13.2nC @ 5V	8.4nC @ 5V, 8.5nC @ 5V
Power - Max	2.5W	1.2W	2W (Ta)
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Discontinued at DiGi Electronics	Active	Active

Engineering Selection Recommendations

DMC3028LSDXQ-13 (Diodes Incorporated)

This substitute maintains full electrical compatibility with the IRF7389PBF across all critical parameters. The device exhibits superior on-state resistance (27mOhm vs. 29mOhm) and significantly reduced gate charge (13.2nC vs. 33nC), resulting in improved switching efficiency. The part is currently in active production status with substantial inventory availability (18,533 units). Packaging is supplied in Tape & Reel format, suitable for automated assembly operations. RoHS3 compliance and MSL 1 rating ensure regulatory and storage compatibility. The reduced power dissipation rating (1.2W vs. 2.5W) indicates this device is optimized for lower thermal load applications; thermal analysis is required for designs approaching the original 2.5W specification.

SP8M10FRATB (Rohm Semiconductor)

This substitute provides full electrical and mechanical compatibility with enhanced performance characteristics. The N-channel device delivers superior on-state resistance (25mOhm vs. 29mOhm) with significantly lower gate charge (8.4nC vs. 33nC), enabling faster switching transitions. The part carries AEC-Q101 automotive qualification and is actively produced with 2,247 units in stock. Packaging is supplied in Cut Tape and Digi-Reel format. The device includes logic-level gate and 4V drive features, supporting broader gate drive voltage flexibility. Operating temperature range extends to 150°C maximum, matching the original specification. The 2W power rating (Ta) aligns more closely with the original 2.5W specification than the DMC3028LSDXQ-13, making this option preferable for thermally constrained designs.

Selection Basis:

Both substitutes are qualified for direct replacement based on matching Vdss (30V), dual N/P-channel configuration, 8-SOIC package footprint, and operating temperature range (-55°C to 150°C). Selection between the two should be determined by thermal budget requirements and gate drive voltage availability in the target application circuit.

Frequently Asked Questions (FAQ)

Q: Can the DMC3028LSDXQ-13 be used in applications where the IRF7389PBF was rated for 2.5W continuous dissipation?

A: The DMC3028LSDXQ-13 is rated for 1.2W maximum power dissipation. Applications requiring sustained operation near 2.5W must perform thermal analysis to confirm the substitute device remains within safe operating limits. The SP8M10FRATB, rated at 2W (Ta), provides closer thermal margin for such applications.

Q: Are there pin-to-pin compatibility differences between these substitutes and the original IRF7389PBF?

A: All three devices use the 8-SOIC package with 0.154" width and 3.90mm body dimension. Pin assignments for N-channel and P-channel elements are consistent across the dual-array configuration. Direct PCB footprint compatibility is confirmed.

Q: What is the significance of the lower gate charge values in the substitute parts?

A: Gate charge (Qg) directly affects switching speed and gate drive power requirements. The DMC3028LSDXQ-13 (13.2nC) and SP8M10FRATB (8.4nC) exhibit substantially lower gate charge than the IRF7389PBF (33nC), resulting in faster switching transitions and reduced gate driver current demand. This represents an improvement over the original specification.

Q: Does the SP8M10FRATB automotive qualification (AEC-Q101) affect its use in non-automotive applications?

A: AEC-Q101 qualification indicates enhanced reliability testing and quality assurance. This certification does not restrict use in non-automotive applications; rather, it confirms the device meets stringent automotive reliability standards, making it suitable for any application requiring equivalent or higher reliability levels.

Q: How do the on-state resistance (Rds On) differences impact circuit performance?

A: Lower Rds On values reduce conduction losses and heat generation. The DMC3028LSDXQ-13 (27mOhm) and SP8M10FRATB (25mOhm) both exhibit lower Rds On than the original IRF7389PBF (29mOhm), providing improved efficiency. This represents a performance enhancement in switching applications.

Q: Are there packaging format considerations for procurement and assembly?

A: The IRF7389PBF supplier device package is listed as 8-SO. The DMC3028LSDXQ-13 is supplied in Tape & Reel (TR) format, while the SP8M10FRATB is available in Cut Tape (CT) and Digi-Reel format. Both formats are compatible with standard surface mount assembly equipment. Procurement format selection should align with production volume and assembly line capabilities.

Q: What compliance certifications are maintained across all three devices?

A: All three devices maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and REACH Unaffected status. ECCN and HTSUS classifications are identical (EAR99 and 8541.29.0095 respectively), ensuring consistent export and tariff treatment.

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