IRF7380PBF Equivalent & Substitute Parts

Part Overview

The IRF7380PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, rated for 80V drain-to-source voltage and 3.6A continuous drain current. This component is configured as a logic-level gate MOSFET in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7380PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	80	V
Continuous Drain Current (Id) @ 25°C	3.6	A
Rds On (Max) @ Id, Vgs	73 mOhm @ 2.2A, 10V	mOhm
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660	pF @ 25V
Power - Max	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF7380PBF is determined by the following critical parameters:

Voltage Rating (Vdss): The IRF7380PBF operates at 80V. Substitute parts must meet or exceed this voltage specification to ensure safe operation in the same circuit topology.

Current Rating (Id): The IRF7380PBF is rated for 3.6A continuous drain current. Substitute parts with equal or higher current ratings are acceptable.

Configuration: The IRF7380PBF is a dual N-channel MOSFET array in an 8-SO package. All substitutes must maintain the same dual N-channel configuration and 8-SO/8-SOIC package footprint for direct PCB compatibility.

Gate Drive Compatibility: The IRF7380PBF features logic-level gate operation. All substitute parts must also feature logic-level gate characteristics to ensure compatibility with existing gate drive circuits.

On-Resistance (Rds On): The IRF7380PBF specifies 73 mOhm maximum at 2.2A, 10V. Lower on-resistance values in substitute parts improve efficiency and reduce power dissipation.

Thermal Performance: Operating temperature range and power dissipation capability must be compatible with the application environment.

Compliance: All substitute parts must maintain ROHS3 compliance and equivalent moisture sensitivity levels (MSL 1).

Parameter Comparison

Parameter	IRF7380PBF (Main)	DMN6040SSD-13	FDS3890	HAT2038R-EL-E	STS4DNF60L	STS5DNF60L
Manufacturer	Infineon	Diodes Inc.	onsemi	Renesas	STMicroelectronics	STMicroelectronics
Vdss (V)	80	60	80	60	60	60
Id @ 25°C (A)	3.6	5	4.7	5	4	5
Rds On (Max) (mOhm)	73 @ 2.2A, 10V	40 @ 4.5A, 10V	44 @ 4.7A, 10V	58 @ 3A, 10V	55 @ 2A, 10V	45 @ 2A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	3 @ 250µA	4 @ 250µA	2.2 @ 1mA	2.5 @ 250µA	2.5 @ 250µA
Gate Charge (Qg) (nC)	23 @ 10V	22.4 @ 10V	35 @ 10V	—	15 @ 4.5V	15 @ 4.5V
Input Capacitance (Ciss) (pF)	660 @ 25V	1287 @ 25V	1180 @ 40V	520 @ 10V	1030 @ 25V	1030 @ 25V
Power - Max (W)	2	1.3	0.9	3	2	2
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	—	-55 to 150	-55 to 150
Configuration	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Discontinued	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

FDS3890 (onsemi PowerTrench®): This is the primary direct substitute for the IRF7380PBF. It maintains the same 80V Vdss rating and provides superior current handling (4.7A vs. 3.6A) with improved on-resistance (44 mOhm vs. 73 mOhm). The FDS3890 extends the operating temperature range to 175°C and is currently in active production status. The 8-SOIC package provides direct PCB compatibility. This part is recommended for applications requiring voltage ratings at or above 80V.

STS5DNF60L (STMicroelectronics STripFET™ II): This substitute is suitable for applications where the circuit voltage does not exceed 60V. It offers the highest current rating (5A) among the 60V alternatives and the lowest on-resistance (45 mOhm). The STS5DNF60L includes AEC-Q101 automotive qualification and is available in high volume (1,000,300 pcs in stock). This part is recommended for cost-sensitive applications and automotive-grade designs operating below 60V.

DMN6040SSD-13 (Diodes Incorporated): This 60V, 5A substitute provides excellent on-resistance performance (40 mOhm) and is available in high volume (77,900 pcs). It is suitable for applications where voltage derating to 60V is acceptable. The lower gate charge (22.4 nC) may reduce switching losses in high-frequency applications.

STS4DNF60L (STMicroelectronics STripFET™): This 60V, 4A substitute maintains the same 2W power rating as the IRF7380PBF and offers moderate on-resistance (55 mOhm). It is suitable for applications with moderate current requirements and 60V maximum voltage operation.

HAT2038R-EL-E (Renesas Electronics): This 60V, 5A substitute features the highest power dissipation rating (3W) among the alternatives and the lowest gate threshold voltage (2.2V @ 1mA). It is suitable for applications requiring enhanced thermal performance and lower gate drive requirements. However, the maximum operating temperature specification is not fully detailed in the provided data.

Voltage Derating Consideration: Substitutes rated at 60V (DMN6040SSD-13, HAT2038R-EL-E, STS4DNF60L, STS5DNF60L) are suitable only for applications where the maximum circuit voltage does not exceed 60V. For applications requiring the full 80V rating of the IRF7380PBF, the FDS3890 is the only direct substitute.

Frequently Asked Questions (FAQ)

Q: Can I use a 60V-rated MOSFET to replace the 80V IRF7380PBF?

A: No, not in all applications. A 60V-rated MOSFET can only be used if your circuit design operates at voltages not exceeding 60V. If your application requires the full 80V capability, you must use the FDS3890, which maintains the 80V Vdss rating. Using an undersized voltage rating creates risk of device failure and circuit damage.

Q: What is the difference between the 8-SO and 8-SOIC package designations?

A: The 8-SO and 8-SOIC designations refer to the same physical package form factor: an 8-pin small-outline integrated circuit with 0.154" (3.90mm) width. These terms are used interchangeably by different manufacturers. All substitute parts listed maintain this identical footprint and are directly compatible on the PCB.

Q: Does lower on-resistance always mean better performance?

A: Lower on-resistance reduces power dissipation and heat generation during conduction, which improves efficiency. However, the selection must also consider gate charge, input capacitance, and switching frequency. The FDS3890 and STS5DNF60L both offer superior on-resistance compared to the IRF7380PBF, making them more efficient choices for most applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and maintain MSL 1 (Unlimited) moisture sensitivity levels, matching the environmental compliance profile of the IRF7380PBF.

Q: What is the significance of the gate charge (Qg) specification?

A: Gate charge determines the amount of charge required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IRF7380PBF specifies 23 nC, while the STS5DNF60L and STS4DNF60L offer significantly lower gate charge (15 nC), which may reduce power consumption in high-frequency switching applications.

Q: Can I use the HAT2038R-EL-E in a high-temperature application?

A: The HAT2038R-EL-E is rated for operation to 150°C (TJ). The FDS3890 extends this to 175°C, providing additional thermal margin. For applications requiring operation above 150°C, the FDS3890 is the preferred choice.

Q: Why is the STS5DNF60L available in such high volume?

A: The STS5DNF60L includes AEC-Q101 automotive qualification, making it suitable for automotive applications. High volume availability reflects strong demand in the automotive sector. This part is recommended for cost-sensitive designs and applications where automotive-grade components are required.

Q: What does "logic-level gate" mean?

A: Logic-level gate operation means the MOSFET can be fully switched on and off using standard logic-level voltage signals (typically 3.3V to 5V). All substitute parts maintain this logic-level gate characteristic, ensuring compatibility with existing gate drive circuits.

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