IRF737LC Equivalent & Substitute Parts

Part Overview

The IRF737LC is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 300V drain-to-source voltage with 6.1A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220AB configuration and is designed for general-purpose switching applications requiring moderate current handling at high voltage levels.

The IRF737LC carries an Obsolete product status. Locating equivalent substitute components is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications currently utilizing this device.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	300	V
Current - Continuous Drain (Id) @ 25°C	6.1	A (Tc)
Rds On (Max) @ Id, Vgs	750	mOhm @ 3.7A, 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRF737LC is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 300V
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must encompass -55°C to 150°C
Gate-Source Voltage (Vgs Max): Must support ±30V

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package / Case: TO-220-3 configuration

Performance Considerations:

Continuous Drain Current (Id): Substitute must meet or exceed 6.1A at 25°C
Rds On (Max): Lower on-resistance values indicate improved performance
Power Dissipation (Max): Higher ratings provide thermal margin

The STP12NK30Z meets all electrical and mechanical compatibility criteria for direct substitution in the IRF737LC application space.

Parameter Comparison

Parameter	IRF737LC	STP12NK30Z	Unit
Manufacturer	Vishay Siliconix	STMicroelectronics	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	300	300	V
Current - Continuous Drain (Id) @ 25°C	6.1	9	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	750 @ 3.7A, 10V	400 @ 4.5A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4.5 @ 50µA	V
Gate Charge (Qg) (Max) @ Vgs	17 @ 10V	35 @ 10V	nC
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	430 @ 25V	670 @ 25V	pF
Power Dissipation (Max)	74	90	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

STP12NK30Z as Primary Substitute:

The STP12NK30Z is a direct functional substitute for the IRF737LC across all critical electrical and mechanical parameters. Both devices share identical Vdss (300V), operating temperature range (-55°C to 150°C), and TO-220-3 package configuration.

The STP12NK30Z provides performance advantages over the IRF737LC:

Higher continuous drain current rating (9A versus 6.1A)
Lower on-resistance (400 mOhm versus 750 mOhm)
Higher power dissipation capability (90W versus 74W)
Active product status ensures ongoing availability and supply chain support

Compliance Considerations:

The IRF737LC is RoHS non-compliant. The STP12NK30Z is ROHS3 compliant and REACH unaffected, making it suitable for applications subject to environmental and regulatory compliance requirements.

Inventory and Supply:

The STP12NK30Z is currently in active production with 6,570 pieces available in stock, compared to the IRF737LC's obsolete status with 18,600 pieces remaining in inventory.

Frequently Asked Questions (FAQ)

Q: Can the STP12NK30Z directly replace the IRF737LC in existing circuit designs?

A: Yes. Both devices are N-Channel MOSFETs with identical 300V Vdss ratings, matching operating temperature ranges (-55°C to 150°C), and identical TO-220-3 package configurations. Pin compatibility and electrical characteristics support direct substitution.

Q: What are the key performance differences between these two devices?

A: The STP12NK30Z offers higher continuous drain current (9A versus 6.1A), lower on-resistance (400 mOhm versus 750 mOhm at comparable conditions), and greater power dissipation capability (90W versus 74W). These improvements provide enhanced thermal performance and reduced conduction losses.

Q: Are there any gate charge or input capacitance differences I should consider?

A: The STP12NK30Z has higher gate charge (35 nC versus 17 nC) and higher input capacitance (670 pF versus 430 pF). These parameters may affect switching speed and gate drive requirements in high-frequency applications. Circuit simulation or testing is appropriate to validate performance in specific switching topologies.

Q: Does the STP12NK30Z meet modern compliance standards?

A: Yes. The STP12NK30Z is ROHS3 compliant and REACH unaffected, whereas the IRF737LC is RoHS non-compliant. Applications subject to environmental regulations or customer compliance requirements should use the STP12NK30Z.

Q: What is the packaging difference between these devices?

A: Both devices use Through Hole TO-220-3 packages. The IRF737LC is supplied in standard packaging, while the STP12NK30Z is supplied in Tube packaging. Both are compatible with standard PCB footprints and assembly processes.

Q: Why is the IRF737LC listed as obsolete?

A: The IRF737LC has reached end-of-life status with Vishay Siliconix. The STP12NK30Z from STMicroelectronics is an active product with ongoing manufacturing support, making it the recommended choice for new designs and ongoing production requirements.

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