IRF7351PBF Equivalent & Substitute Parts

Part Overview

The IRF7351PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring 60V drain-to-source voltage capability and 8A continuous drain current. This device features logic level gate operation and is housed in an 8-SOIC package with a maximum power dissipation of 2W.

The IRF7351PBF has been discontinued at DiGi Electronics. Identifying equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, gate characteristics, and thermal operating range.

Substiute Parts

IRF7351PBF
Infineon TechnologiesIn Stock: 798589IRF7351PBF Datasheet
IRF7351PBF
Current Part
DMN6040SSD-13
Diodes IncorporatedIn Stock: 77976DMN6040SSD-13 Datasheet
DMN6040SSD-13
MFR Recommended

Key Parameters

Parameter Value Specification
Drain to Source Voltage (Vdss) 60V Maximum rated voltage
Current - Continuous Drain (Id) @ 25°C 8A Maximum continuous current
Rds On (Max) @ Id, Vgs 17.8mOhm @ 8A, 10V On-state drain-source resistance
Vgs(th) (Max) @ Id 4V @ 50µA Gate threshold voltage
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Total gate charge
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 30V Input capacitance
Power - Max 2W Maximum power dissipation
Operating Temperature -55°C ~ 150°C (TJ) Junction temperature range
Configuration 2 N-Channel (Dual) Device architecture
Package / Case 8-SOIC (0.154", 3.90mm Width) Physical package specification
FET Feature Logic Level Gate Gate drive characteristic

Substitute Part Grouping Explanation

Substitute parts for the IRF7351PBF are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 60V
  • Configuration: Must be 2 N-Channel (Dual) in 8-SOIC package
  • Mounting Type: Must be Surface Mount
  • Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)
  • FET Feature: Must support Logic Level Gate operation
  • Operating Temperature Range: Must span -55°C ~ 150°C (TJ)

Allowable Parameter Variations: Substitute parts may have lower continuous drain current (Id), lower maximum power dissipation, higher on-state resistance (Rds On), or different gate charge characteristics, provided the device remains functional within the application's electrical requirements. These parameters represent performance trade-offs rather than incompatibilities.

The DMN6040SSD-13 qualifies as a substitute based on matching voltage rating, dual N-channel configuration, identical package type, logic level gate feature, and identical operating temperature range.

Parameter Comparison

Parameter IRF7351PBF (Main Part) DMN6040SSD-13 (Substitute) Compatibility Note
Manufacturer Infineon Technologies Diodes Incorporated Different manufacturer
Drain to Source Voltage (Vdss) 60V 60V Exact match
Current - Continuous Drain (Id) @ 25°C 8A 5A Substitute rated lower
Rds On (Max) @ Id, Vgs 17.8mOhm @ 8A, 10V 40mOhm @ 4.5A, 10V Substitute has higher resistance
Vgs(th) (Max) @ Id 4V @ 50µA 3V @ 250µA Substitute has lower threshold
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 22.4nC @ 10V Substitute has lower gate charge
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 30V 1287pF @ 25V Comparable values
Power - Max 2W 1.3W Substitute rated lower
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Exact match
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) Exact match
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exact match
FET Feature Logic Level Gate Logic Level Gate Exact match
Product Status Discontinued at DiGi Electronics Active Substitute is currently available
RoHS Status ROHS3 Compliant ROHS3 Compliant Exact match
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Exact match

Engineering Selection Recommendations

Substitution Feasibility:

The DMN6040SSD-13 is electrically and mechanically compatible with the IRF7351PBF for applications where the reduced current rating (5A versus 8A) and lower power dissipation (1.3W versus 2W) do not exceed design margins. Both devices share identical voltage ratings, package geometry, gate drive characteristics, and operating temperature specifications.

Compliance Considerations:

Both the IRF7351PBF and DMN6040SSD-13 maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity classification. Both are unaffected by REACH regulations and classified under ECCN EAR99 and HTSUS 8541.29.0095. These regulatory alignments ensure substitution does not introduce compliance complications.

Availability Status:

The IRF7351PBF is discontinued at DiGi Electronics with 798,500 pieces reported in stock through alternative channels. The DMN6040SSD-13 maintains active product status with 77,900 pieces in current inventory, providing assured long-term availability for new designs and production continuity.

Performance Trade-offs:

The DMN6040SSD-13 exhibits higher on-state resistance (40mOhm versus 17.8mOhm) and lower gate charge (22.4nC versus 36nC). Applications operating at maximum current levels (8A) or requiring minimal power dissipation must evaluate whether the substitute's reduced performance envelope remains acceptable. Lower gate charge may provide switching speed advantages in certain circuit topologies.

Frequently Asked Questions (FAQ)

Q: Can the DMN6040SSD-13 directly replace the IRF7351PBF in existing PCB designs?

A: Yes, from a physical and electrical interface perspective. Both devices use identical 8-SOIC packaging with matching pinout and footprint. No PCB modifications are required. However, circuit performance must be validated against the substitute's lower current rating (5A) and higher on-state resistance (40mOhm).

Q: What is the primary limitation of using DMN6040SSD-13 as a substitute?

A: The continuous drain current rating is reduced from 8A to 5A, and maximum power dissipation decreases from 2W to 1.3W. Applications requiring sustained 8A operation or high thermal dissipation may exceed the substitute's specifications. Thermal analysis and current distribution verification are necessary for high-power applications.

Q: Are there any gate drive compatibility issues between these devices?

A: No. Both devices feature logic level gate operation with comparable threshold voltages (4V versus 3V) and similar input capacitance values (1330pF versus 1287pF). Standard logic level gate drivers compatible with the IRF7351PBF will operate the DMN6040SSD-13 without modification.

Q: Do regulatory certifications differ between these parts?

A: No. Both devices maintain identical ROHS3 compliance, MSL Level 1 classification, REACH unaffected status, and ECCN/HTSUS coding. Substitution introduces no regulatory complications for existing certifications or compliance documentation.

Q: What is the gate charge difference impact on circuit performance?

A: The DMN6040SSD-13 exhibits lower total gate charge (22.4nC versus 36nC). This may reduce gate drive power requirements and potentially improve switching speed in high-frequency applications. However, this represents a performance advantage rather than a limitation for most standard switching applications.

Q: Is the DMN6040SSD-13 suitable for replacement in production inventory?

A: Yes, provided application current requirements do not exceed 5A continuous operation. The active product status and current inventory availability (77,900 pieces) make this substitute suitable for production planning and long-term supply chain continuity following IRF7351PBF discontinuation.

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