IRF734PBF N-Channel MOSFET 450V 4.9A Equivalent & Substitute Parts

Part Overview

The IRF734PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 450V drain-to-source voltage with 4.9A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part carries RoHS3 compliance and operates across the industrial temperature range of -55°C to 150°C.

Substiute Parts

IRF734PBF
Vishay SiliconixIn Stock: 3900IRF734PBF Datasheet
IRF734PBF
Current Part
IRF734
Vishay SiliconixIn Stock: 2234IRF734 Datasheet
IRF734
Parametric Equivalent
FDP7N50
onsemiIn Stock: 2233FDP7N50 Datasheet
FDP7N50
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 4.9 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.9A, 10V
Power Dissipation (Max) 74 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRF734PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel topology
  • Drain to Source Voltage (Vdss): Minimum 450V rating
  • Current - Continuous Drain (Id): Minimum 4.9A at 25°C
  • Mounting Type: Through Hole configuration
  • Package / Case: TO-220-3 compatible footprint
  • Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

  • Drive Voltage: 10V gate drive capability
  • Rds On (Max): On-state resistance characteristics
  • Power Dissipation: Thermal handling capacity

Substitute parts must satisfy all primary criteria to ensure direct functional replacement. Secondary parameters may vary within acceptable engineering tolerances for the application context.

Parameter Comparison

Parameter IRF734PBF (Main) IRF734 (Parametric Equivalent) FDP7N50 (MFR Recommended)
Manufacturer Vishay Siliconix Vishay Siliconix onsemi
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 450 V 450 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.9 A (Tc) 4.9 A (Tc) 7 A (Tc)
Drive Voltage (Max Rds On) 10 V 10 V 10 V
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.9A, 10V 1.2 Ohm @ 2.9A, 10V 900 mOhm @ 3.5A, 10V
Power Dissipation (Max) 74 W (Tc) 74 W (Tc) 89 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ) -55 to 150 °C (TJ) -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Obsolete
RoHS Status ROHS3 Compliant RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

IRF734 (Parametric Equivalent): The IRF734 is an exact parametric match to the IRF734PBF, sharing identical electrical specifications and thermal characteristics. This part maintains Active product status, ensuring long-term availability and supply chain continuity. However, the IRF734 carries RoHS non-compliant status, which may present regulatory constraints in applications subject to RoHS3 requirements. Selection of this substitute is appropriate for applications where RoHS compliance is not mandated.

FDP7N50 (MFR Recommended): The FDP7N50 from onsemi provides enhanced electrical performance with higher drain current (7A versus 4.9A), improved on-state resistance (900 mOhm versus 1.2 Ohm), and increased power dissipation capability (89W versus 74W). The device maintains the same 10V gate drive voltage and identical operating temperature range. The FDP7N50 exceeds the voltage rating requirement at 500V, providing additional design margin. This part is RoHS3 compliant and compatible with TO-220-3 footprints. The Obsolete product status indicates limited future availability. Selection of this substitute is appropriate for applications requiring enhanced thermal performance or higher current capacity within the same package footprint.

Frequently Asked Questions (FAQ)

Q: Can the IRF734 directly replace the IRF734PBF? A: The IRF734 provides identical electrical and thermal specifications to the IRF734PBF. Both devices share the same Vdss (450V), Id (4.9A), Rds On (1.2 Ohm), and power dissipation (74W). The primary distinction is product status and RoHS compliance. Direct substitution is electrically valid; regulatory compliance must be evaluated based on application requirements.

Q: What are the key differences between the IRF734PBF and FDP7N50? A: The FDP7N50 provides higher drain current (7A versus 4.9A), lower on-state resistance (900 mOhm versus 1.2 Ohm), and greater power dissipation capability (89W versus 74W). The FDP7N50 also features a higher Vdss rating (500V versus 450V). Both devices operate across identical temperature ranges and use compatible TO-220-3 packages. The FDP7N50 is RoHS3 compliant, whereas the IRF734PBF is also RoHS3 compliant.

Q: Are all substitute parts compatible with the same PCB footprint? A: Yes. The IRF734, IRF734PBF, and FDP7N50 all use the TO-220-3 package configuration with identical pin assignments and Through Hole mounting. PCB footprints designed for the IRF734PBF accommodate these substitute parts without modification.

Q: Which substitute should be selected for new designs? A: Selection depends on application requirements. For exact electrical performance matching, the IRF734 is appropriate if RoHS non-compliance is acceptable. For enhanced performance with RoHS3 compliance, the FDP7N50 is suitable. Both alternatives maintain the same gate drive voltage (10V) and operating temperature range (-55°C to 150°C).

Q: What is the significance of the Obsolete product status? A: Obsolete status indicates that the manufacturer has discontinued active production and support. The IRF734PBF and FDP7N50 are both classified as Obsolete. The IRF734 maintains Active status, indicating ongoing production and availability. For long-term supply chain planning, Active status parts provide greater procurement certainty.

Q: Can the FDP7N50 be used in applications designed for the IRF734PBF? A: The FDP7N50 exceeds the electrical requirements of the IRF734PBF across all critical parameters: higher Vdss (500V versus 450V), higher Id (7A versus 4.9A), lower Rds On (900 mOhm versus 1.2 Ohm), and higher power dissipation (89W versus 74W). These characteristics ensure functional compatibility in applications designed for the IRF734PBF. The enhanced performance may provide additional design margin in thermally constrained applications.

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